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S5M V6G

S5M V6G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    DO214AB

  • 描述:

    DIODE GEN PURP 5A DO214AB

  • 数据手册
  • 价格&库存
S5M V6G 数据手册
S5A - S5M Taiwan Semiconductor 5A, 50V - 1000V Surface Mount Rectifier FEATURES KEY PARAMETERS ● ● ● ● ● ● Glass passivated chip junction Ideal for automated placement Low forward voltage drop High current capability High surge current capability Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF(AV) 5 A VRRM 50 - 1000 V IFSM 100 A TJ MAX 150 °C Package DO-214AB (SMC) Configuration Single die APPLICATIONS ● ● ● ● Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA ● ● ● ● Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) ● Moisture sensitivity level: level 1, per J-STD-020 ● Terminal: Matte tin plated leads, solderable per J-STD-002 DO-214AB (SMC) ● Meet JESD 201 class 2 whisker test ● Polarity: As marked ● Weight: 0.21 g (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device S5A S5B S5D S5G S5J S5K S5M S5A S5B S5D S5G S5J S5K S5M UNIT Repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Reverse voltage, total rms value VR(RMS) 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Forward current Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode Junction temperature IF(AV) 5 A IFSM 100 A TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version:E1903 S5A - S5M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance per diode RӨJL 13 °C/W Junction-to-ambient thermal resistance per diode RӨJA 47 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS Forward voltage per diode (1) IF = 5A, TJ = 25°C Reverse current @ rated VR per diode (2) TJ = 25°C 1 MHz, VR=4.0V IF=0.5A , IR=1.0A Reverse recovery time TYP. MAX. UNIT VF - 1.15 V - 10 µA - 250 µA CJ 60 - pF trr 1500 - ns IR TJ = 125°C Junction capacitance SYMBOL IRR=0.25A Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO. PART NO. SUFFIX S5x (Note 1,2) PACKING CODE SUFFIX PACKING CODE PACKAGE PACKING R7 SMC 850 / 7" Plastic reel R6 SMC 3,000 / 13" Paper reel SMC 3,000 / 13" Plastic reel V7 Matrix SMC 850 / 7" Plastic reel V6 Matrix SMC 3,000 / 13" Plastic reel M6 H G Note : 1. "x" defines voltage from 50V (S5A) to 1000V (S5M) 2. Only V6 and V7 are all green compound (halogen free) EXAMPLE EXAMPLE P/N PART NO. PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX DESCRIPTION S5AHR7G S5A H R7 G AEC-Q101 qualified Green compound 2 Version:E1903 S5A - S5M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 5 JUNCTION CAPACITANCE.(pF) AVERAGE FORWARD CURRENT (A) 6 4 3 2 1 RESISTIVE OR INDUCTIVE LOAD 10 f=1.0MHz Vsig=50mVp-p 0 1 0 25 50 75 100 125 150 1 10 REVERSE VOLTAGE (V) LEAD TEMPERATURE (°C) Fig.4 Typical Forward Characteristics 10 TJ=125°C 1 TJ=25°C 0.1 20 40 60 80 100 120 140 100 10 10 TJ=125°C TJ=25°C 0.1 1 0.01 0.001 0.3 0.1 0.6 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) UF1DLW 1 (A) 100 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.3 Typical Reverse Characteristics 0 100 0.7 0.4 0.8 0.5 0.9 0.6 1 0.7 1.1 Pulse width Pules width=300μs 1% duty cycle 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 FORWARD VOLTAGE (V) 3 Version:E1903 1.2 S5A - S5M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) PEAK FORWARD SURGE CURRENT (A) Fig.5 Maximum Non-repetitive Forward Surge Current 100 8.3ms Single Half Sine Wave 10 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram 4 Version:E1903 S5A - S5M Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AB (SMC) Unit (mm) DIM. Unit (inch) Min. Max. Min. Max. A 2.90 3.20 0.114 0.126 B 6.60 7.11 0.260 0.280 C 5.59 6.22 0.220 0.245 D 2.00 2.62 0.079 0.103 E 1.00 1.60 0.039 0.063 F 7.75 8.13 0.305 0.320 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 3.30 0.130 B 2.50 0.098 C 6.80 0.268 D 4.40 0.173 E 9.40 0.370 MARKING DIAGRAM Matrix SMC SMC P/N =Marking Code G =Green Compound YW =Date Code F =Factory Code 5 Version:E1903 S5A - S5M Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version:E1903
S5M V6G 价格&库存

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S5M V6G
    •  国内价格
    • 1+1.32290
    • 10+1.06694
    • 30+0.95732

    库存:10