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KBPM306G

KBPM306G

  • 厂商:

    GENESICSEMICONDUCTOR

  • 封装:

    SIP4

  • 描述:

    DIODEBRIDGE600V3AKBPM

  • 数据手册
  • 价格&库存
KBPM306G 数据手册
KBPM306G thru KBPM310G Silicon Bridge Rectifier VRRM = 50 V - 1000 V IF = 3 A Features • Types up to 1000 V VRRM • Ideal for printed circuit board • Surge overload rating to 65 Amps peak • High temperature soldering guaranteed 250°C/ 10 seconds • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Reliable, low cost construction utilizing molded plastic technique KBPM Package Mechanical Data Leads: Tin plated copper Weight: 0.047 oz, 1.33 g Mounting position: Any Terminals: Leads solderable per MIL-STD-202, Method 208 Polarity: Polarity marked on body Maximum ratings, at Tj = 25 °C, unless otherwise specified Conditions KBPM306G KBPM308G KBPM310G Unit VRRM 600 800 1000 V RMS reverse voltage VRMS 420 560 700 V DC blocking voltage VDC 600 800 1000 V Parameter Symbol Repetitive peak reverse voltage Continuous forward current IF TC ≤ 65 °C 3 3 3 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 80 80 80 A Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse current IR Conditions KBPM306G KBPM308G KBPM310G Unit IF = 3 A, Tj = 25 °C VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 125 °C 1.1 5 500 1.1 5 500 1.1 5 500 V 14.0 14.0 14.0 μA Thermal characteristics Thermal resistance, junction case www.genesicsemi.com RthJA 1 °C/W KBPM306G thru KBPM310G www.genesicsemi.com 2
KBPM306G 价格&库存

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