TSD10H150CW MNG

TSD10H100CW – TSD10H200CW Taiwan Semiconductor 10A, 100V - 200V Trench Schottky Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Low power loss/ high efficiency High forward surge capability RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 10 A VRRM 100 - 200 V IFSM 100 A TJ MAX 150 °C 2 Package TO-263AB (D PAK) Configuration Dual dies ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● 2 Case: TO-263AB (D PAK) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.60g (approximately) 2 TO-263AB (D PAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device Repetitive peak reverse voltage VRRM Reverse voltage, total rms value VR(RMS) Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Critical rate of rise of off-state voltage TSD10H TSD10H TSD10H TSD10H UNIT 100CW 120CW 150CW 200CW TSD10H TSD10H TSD10H TSD10H 100CW 120CW 150CW 200CW 100 120 150 200 V 70 84 105 140 V IF 10 A IFSM 100 A dv/dt 10,000 V/µs Junction temperature TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: C2103 TSD10H100CW – TSD10H200CW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 3.2 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TSD10H100CW TSD10H120CW TSD10H150CW Forward voltage per (1) diode TSD10H200CW VF TSD10H100CW TSD10H120CW TSD10H150CW Reverse current @ (2) rated VR per diode IF = 5A, TJ = 25°C TSD10H200CW TSD10H100CW TSD10H120CW TSD10H150CW TSD10H200CW TSD10H100CW TSD10H120CW TSD10H150CW TSD10H200CW IF = 5A, TJ = 125°C TJ = 25°C TYP MAX UNIT 0.62 0.70 V 0.69 0.79 V 0.78 0.88 V 0.81 0.91 V 0.55 0.63 V 0.58 0.66 V 0.64 0.72 V 0.67 0.75 V - 100 µA - 15 mA - 10 mA IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) TSD10HxCW PACKAGE 2 TO-263AB (D PAK) PACKING 800 / Tape & Reel Notes: 1. "x" defines voltage from 100V(TSD10H100CW) to 200V(TSD10H200CW) 2 Version: C2103 TSD10H100CW – TSD10H200CW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 TSD10H100CW CAPACITANCE (pF) 10 5 1000 TSD10H120CW 100 TSD10H150CW f=1.0MHz Vsig=50mVp-p 10 0 50 75 100 125 0.1 150 1 ° CASE TEMPERATURE ( C) INSTANTANEOUS FORWARD CURRENT (A) TJ=150°C TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 20 30 40 50 60 70 80 90 100 10010 TSD10H100CW UF1DLW 10 1 1 0.1 TJ=125°C TJ=125°C TJ=150°C TJ=25°C TJ=100°C 0.1 0.01 TJ=25°C 0.01 0.001 00.3 Pulse width 300μs 1% duty cycle Pulse width 0.2 0.5 0.4 0.4 0.6 0.6 0.8 0.8 0.7 0.9 11 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.5 Typical Reverse Characteristics Fig.6 Typical Forward Characteristics 100 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) 1 10 INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 TSD10H100CW 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 10 TSD10H120CW 10 TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) (A) 25 TSD10H200CW 1.1 1.2 1.1 1.2 10010 TSD10H120CW 10 1 1 0.1 UF1DLW TJ=125°C TJ=125°C TJ=150°C TJ=25°C (A) AVERAGE FORWARD CURRENT (A) 15 TJ=100°C 0.1 0.01 TJ=25°C Pulse width 300μs 1% duty cycle Pulse width 0.01 0.001 00.3 0.2 0.5 0.4 0.4 0.6 0.6 0.8 0.8 0.7 0.9 11 FORWARD VOLTAGE (V) 3 Version: C2103 TSD10H100CW – TSD10H200CW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.8 Typical Forward Characteristics TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 10010 TSD10H150CW UF1DLW 10 1 TJ=125°C TJ=125°C TJ=150°C 1 0.1 TJ=100°C TJ=25°C 0.1 0.01 0.01 0.001 00.3 Pulse width 300μs 1% duty cycle Pulse width 0.2 0.5 0.4 0.4 0.6 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) 0.1 TJ=150°C TJ=125°C TJ=100°C 0.01 0.001 0.0001 TJ=25°C 0.00001 10 20 30 40 50 60 70 80 11 1.1 1.2 11.2 1.1 1.2 Fig.10 Typical Forward Characteristics 10 1 0.6 0.8 0.8 0.7 0.9 FORWARD VOLTAGE (V) Fig.9 Typical Reverse Characteristics TSD10H200CW TJ=25°C 90 100 10010 TSD10H200CW 10 1 10.1 UF1DLW TJ=125°C TJ=125°C TJ=150°C TJ=25°C TJ=100°C 0.1 0.01 0.001 0.01 0 0.3 TJ=25°C Pulse widthPulse 300μs 1% duty cycle width 0.4 0.2 0.5 0.4 0.60.6 0.7 0.80.8 0.9 1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) 4 (A) TSD10H150CW (A) 10 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.7 Typical Reverse Characteristics Version: C2103 TSD10H100CW – TSD10H200CW Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS 2 TO-263AB (D PAK) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: C2103 TSD10H100CW – TSD10H200CW Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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