GP3D020A065B

GP3D020A065B VDC QC IF Tj,max 650V SiC Schottky Diode Amp+ TM 650 V 53 nC 20 A 175 °C Package Features • Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ* • All parts tested to greater than 715V Amp+ TM Benefits • Near zero switching loss • Higher efficiency • Reduced heat sink requirements • Easy to parallel Amp+ TM Applications Part # Package Marking GP3D020A065B TO-247-2L 3D020A065 • Switch mode power supplies, UPS • Power factor correction • Output rectification • EV charging stations Maximum Ratings, at Tj=25 °C, unless otherwise specified Characteristics Continuous forward current Symbol IF** Surge non-repetitive forward current sine halfwave IFSM Non-repetitive peak forward current IF,max Conditions Values TC=25 °C, Tj=175 °C 55 TC=125 °C, Tj=175 °C 29 TC=150 °C, Tj=175 °C 18 TC=25 °C, tp=8.3 ms 135 TC=110 °C, tp=8.3 ms 125 TC=25 °C, tp=10 μs 1100 TC=25 °C, tp=8.3 ms 76 TC=110 °C, tp=8.3 ms 65 Unit A A A i 2t value i 2dt Repetitive peak reverse voltage VRRM Tj=25 °C 650 V Diode dv/dt ruggedness dv/dt Turn-on slew rate, repetitive 200 V/ns Power dissipation Ptot** TC=25 °C 170 W -55…175 °C Operating junction & storage temperature Soldering temperature Mounting torque Tj, Tstorage Tsolder Continuous Wave soldering leads M3 Screw A2s 260 °C 1 N-m Notes: * EAS of 135 mJ is based on starting Tj = 25°C, L = 1.0 mH, IAS = 16.43 A, V = 50 V. ** Typical RthJC used Rev. 1.3, 3/4/2022 www.SemiQ.com p.1 GP3D020A065B Amp +TM 650V SiC Schottky Diode Electrical Characteristics, at Tj=25 °C, unless otherwise specified Characteristics Symbol Values Conditions min. typ. Unit max. DC blocking voltage VDC IR=50uA, Tj=25 °C 650 - - V Breakdown voltage VBR IR=2mA, Tj=25 °C 715 - - V IF=20A, Tj=25 °C - 1.40 1.70 Diode forward voltage VF IF=20A, Tj=125 °C - 1.51 - IF=20A, Tj=175 °C - 1.64 2.20 VR=650V, Tj=25 °C - 2 50 VR=715V, Tj=25 °C - 7 - VR=650V, Tj=125 °C - 19 - VR=650V, Tj=175 °C - 72 500 VR=400V, Tj=25 °C - 53 - VR=1V, f=1 MHz - 866 - VR=200V, f=1 MHz - 102 - VR=400V, f=1 MHz - 78 - IR Reverse current QC Total capacitive charge Total capacitance C V mA nC pF Thermal Characteristics Characteristics Thermal resistance, junction-case Symbol Conditions RthJC - Values min. typ. max. - 0.88 1.13 Unit o C/W Typical Performance 40 1.E-04 35 -55C -55C 25C 25C 75C 30 75C 1.E-05 125C 125C IR (A) IF (A) 175C 175C 25 20 1.E-06 15 10 1.E-07 5 0 1.E-08 0.0 0.5 1.0 1.5 2.0 2.5 0 VF (V) 200 300 400 500 600 VR (V) Fig. 1 Forward Characteristics (parameterized on Tj) Rev. 1.3, 3/4/2022 100 Fig. 2 Reverse Characteristics (parameterized on Tj) www.SemiQ.com p.2 10,000 180 -55C 9,000 160 25C 8,000 75C 140 125C 7,000 120 175C PTotal (W) 6,000 IR (µA) GP3D020A065B Amp +TM 650V SiC Schottky Diode 5,000 4,000 100 80 60 3,000 40 2,000 20 1,000 Tj=175 oC 0 300 400 500 600 700 800 900 1,000 25 45 65 85 VR (V) 105 125 145 165 TC (oC) Fig. 4 Power Derating Fig. 3 Reverse Characteristics (parameterized on Tj) 250 1200 Duty cycle 100% Tj=25 oC 70% 1000 50% 200 30% 20% 800 10% IF (A) C (pF) 150 600 100 400 50 200 Tj=175 oC 0 0 25 45 65 85 105 125 145 165 1 TC (oC) 100 VR (V) Fig. 5 Current Derating Rev. 1.3, 3/4/2022 10 Fig. 6 Capacitance www.SemiQ.com p.3 GP3D020A065B Amp +TM 650V SiC Schottky Diode 80 20 Tj=25 oC 70 Tj=25 oC 18 16 60 14 12 EC (μJ) QC (nC) 50 40 10 8 30 6 20 4 10 2 0 0 0 100 200 300 400 500 600 0 100 200 300 400 500 600 VR (V) VR (V) Fig. 7 Capacitive Charge Fig. 8 Typical Capacitance Stored Energy Normalized Zthjc 1E+00 D=0.50 1E-01 D=0.30 D=0.10 D=0.05 D=0.02 D=0.01 1E-02 Single Pulse 1E-03 1E-06 1E-04 1E-02 1E+00 1E+02 Pulse Width (s) Fig. 9 Transient Thermal Impedance Rev. 1.3, 3/4/2022 www.SemiQ.com p.4 Amp +TM 650V SiC Schottky Diode GP3D020A065B Package Dimensions TO-247-2L Sym A A1 A2 b b2 c D D1 D2 E E1 E2 e L L1 ØP ØP1 Q S Rev. 1.3, 3/4/2022 Millimeters Min Max 4.70 5.31 2.21 2.59 1.50 2.49 0.99 1.40 1.65 2.39 0.38 0.89 20.80 21.46 13.08 17.65 0.51 1.35 15.49 16.26 13.46 14.16 3.43 5.49 5.44 BSC 19.81 20.32 4.10 4.50 3.56 3.66 7.06 7.39 5.38 6.20 6.04 6.30 Inches Max Min 0.185 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.065 0.094 0.015 0.035 0.819 0.845 0.515 0.695 0.020 0.053 0.610 0.640 0.530 0.557 0.135 0.216 .214 BSC 0.780 0.800 0.161 0.177 0.140 0.144 0.278 0.291 0.212 0.244 0.238 0.248 www.SemiQ.com p.5 650V SiC Schottky Diode Amp +TM GP3D020A065B Revision History Date 12/19/2019 2/20/2020 4/20/2021 3/4/2022 Revision 1.0 1.1 1.2 1.3 Notes Initial release of datasheet Using Rthjc typical for IF and Ptot Updated forward voltage spec - valid for date codes after 2101 (YYWW format) Updated VBR spec Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented March, 2013. RoHS Declarations for this product can be obtained from the Product Documentation sections of www.SemiQ.com. REACh Compliance REACh substances of high concern (SVHC) information is available for this product. Since the European Chemicals Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact our office at SemiQ Headquarters in Lake Forest, California to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. SemiQ Inc., reserves the right to make changes to the product specifications and data in this document without notice. SemiQ products are sold pursuant to SemiQ’s terms and conditions of sale in place at the time of order acknowledgement. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control. SemiQ makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SemiQ assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using SemiQ products. To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by SemiQ. SemiQ reserves the right to make changes, corrections, modifications, and improvements of datasheet without notice. Rev. 1.3, 3/4/2022 www.SemiQ.com p.6