GHXS015A120S-D3

GHXS015A120S-D3 VDC IF Tj,max 1200V SiC Power Module Dual Diode Pack Features 1200 V 15 A 175 °C Package • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1,400V Benefits Parallel • Outstanding performance at high frequency operation • Low loss and low EMI noise • Very rugged and easy mounting • Internally isolated package (AlN) Part # • Low junction to case thermal resistance • Easy paralleling due to positive T C of VF GHXS015A120S-D3 • RoHS compliant Package Marking SOT-227 GHXS015A120S-D3 Applications • Switched-mode power supply • Induction heater • Welding equipment • Charging station Maximum Ratings, at Tj=25 °C, unless otherwise specified (per leg) Characteristics Continuous forward current Symbol IF* Conditions TC=25 °C, Tj=175 °C 40 TC=147 °C, Tj=175 °C 15 TC=150 °C, Tj=175 °C 14 TC=25 °C, tp=8.3 ms 100 TC=110 °C, tp=8.3 ms 90 TC=25 °C, tp=10 μs 525 TC=25 °C, tp=8.3 ms 42 TC=110 °C, tp=8.3 ms 34 Surge non-repetitive forward current sine halfwave IFSM Non-repetitive peak forward current IF,max i 2t value i 2dt Repetitive peak reverse voltage VRRM Tj=25 °C Diode dv/dt ruggedness dv/dt Power dissipation Operating junction temperature Storage temperature Ptot* Values Unit A A A A2s 1200 V Turn-on slew rate, repetitive 200 V/ns TC=25 °C 173 W Tj -55…175 °C Tstorage -55…150 °C Notes: *Typical RthJC used Rev. 1.3, 10/16/2020 www.SemiQ.com p.1 GHXS015A120S-D3 1200V SiC Power Module Electrical Characteristics, at Tj=25 °C, unless otherwise specified (per leg) Characteristics Symbol Values Conditions min. typ. Unit max. DC blocking voltage VDC IR=30µA, Tj=25 °C 1200 - - V Breakdown voltage VBR IR=1,000uA, Tj=25 °C 1400 - - V IF=15A, Tj=25 °C - 1.48 1.70 IF=15A, Tj=125 °C - 1.79 - IF=15A, Tj=175 °C - 2.05 2.70 VR=1,200V, Tj=25 °C - 1 30 VR=1,400V, Tj=25 °C - 6 - VR=1,200V, Tj=125 °C - 10 - VF Diode forward voltage Reverse current IR Total capacitive charge QC Total capacitance C VR=1,200V, Tj=175 °C - 41 450 VR=800V, Tj=25 °C - 86 - VR=1V, f=1 MHz - 962 - VR=400V, f=1 MHz - 81 - VR=800V, f=1 MHz - 59 - V mA nC pF Thermal and Package Characteristics, at Tj=25 °C, unless otherwise specified Characteristics Symbol RthJC Thermal resistance, junction-case Values Conditions Per leg min. typ. max. - 0.87 1.00 Unit o Mounting torque Md M4-0.7 screws 1.1 - 1.5 C/W N-m Terminal connection torque Mdt M4-0.7 screws - 1.1 1.3 N-m Package weight Wt - 32 - g 2500 - - V VISOL Isolation voltage IISOL < 1mA, 50/60 Hz, 1 min Typical Performance Per Leg 30 1.E-04 25 -55C -55C 25C 25C 75C 125C 125C 20 175C 175C IR (A) IF (A) 75C 1.E-05 15 1.E-06 10 1.E-07 5 0 1.E-08 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 VF (V) Fig. 1 Forward Characteristics (parameterized on Tj) Rev. 1.3, 10/16/2020 200 400 600 800 1,000 1,200 VR (V) Fig. 2 Reverse Characteristics (parameterized on Tj) www.SemiQ.com p.2 GHXS015A120S-D3 1200V SiC Power Module 2,000 200 -55C 1,800 180 25C 1,600 160 75C 125C 1,400 140 175C PTotal (W) IR (µA) 1,200 1,000 800 120 100 80 600 60 400 40 200 20 Tj=175 oC 0 0 200 400 600 800 1,000 1,200 1,400 1,600 1,800 25 45 65 85 VR (V) Fig. 3 Reverse Characteristics (parameterized on Tj) 125 145 165 Fig. 4 Power Derating 200 1400 Duty cycle 180 100% 70% Tj=25 oC 1200 50% 160 30% 140 1000 20% 10% C (pF) 120 IF (A) 105 TC (oC) 100 80 60 800 600 400 40 200 20 Tj=175 oC 0 0 25 45 65 85 105 125 145 165 1 TC (oC) Fig. 5 Current Derating Rev. 1.3, 10/16/2020 10 100 1000 VR (V) Fig. 6 Capacitance www.SemiQ.com p.3 GHXS015A120S-D3 1200V SiC Power Module 120 50 Tj=25 oC Tj=25 oC 45 100 40 35 80 EC (μJ) QC (nC) 30 60 25 20 40 15 10 20 5 0 0 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 VR (V) VR (V) Fig. 7 Capacitive Charge Fig. 8 Typical Capacitance Stored Energy Normalized Zthjc 1E+00 D=0.50 1E-01 D=0.30 D=0.10 D=0.05 D=0.02 D=0.01 1E-02 1E-03 1E-06 Single Pulse 1E-04 1E-02 1E+00 1E+02 Pulse Width (s) Fig. 9 Transient Thermal Impedance Rev. 1.3, 10/16/2020 www.SemiQ.com p.4 GHXS015A120S-D3 1200V SiC Power Module Package Dimensions SOT-227 Sym A B C D E F G H I J K L M N O P Q R S T U V W X Y Z Rev. 1.3, 10/16/2020 Millimeters Min Max 31.67 31.90 7.95 8.18 4.14 4.24 4.14 4.24 4.14 4.24 14.94 15.09 30.15 30.25 38.00 38.10 4.75 4.83 11.68 12.19 9.45 9.60 0.76 0.84 12.62 12.88 25.15 25.30 24.79 25.04 3.02 3.15 6.71 6.96 4.17 4.42 2.08 2.13 3.28 3.63 26.75 26.90 3.86 4.24 20.55 26.90 5.45 5.85 3.15 3.66 0.00 0.13 www.SemiQ.com Inches Max Min 1.256 1.247 0.322 0.313 0.167 0.163 0.167 0.163 0.167 0.163 0.594 0.588 1.191 1.187 1.500 1.496 0.190 0.187 0.480 0.460 0.378 0.372 0.033 0.030 0.507 0.497 0.996 0.990 0.986 0.976 0.124 0.119 0.274 0.264 0.174 0.164 0.084 0.082 0.143 0.129 1.059 1.053 0.167 0.152 0.814 0.809 0.230 0.215 0.144 0.124 0.005 0.000 p.5 GHXS015A120S-D3 1200V SiC Power Module Revision History Date 9/6/2013 6/4/2014 1/3/2020 10/16/2020 Revision 1.0 1.1 1.2 1.3 Notes Initial release Add the part number, pin assignment table. Applied company name change. Updated parameters. Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented March, 2013. RoHS Declarations for this product can be obtained from the Product Documentation sections of www.SemiQ.com. REACh Compliance REACh substances of high concern (SVHC) information is available for this product. Since the European Chemicals Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact our office at SemiQ Headquarters in Lake Forest, California to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. SemiQ Inc., reserves the right to make changes to the product specifications and data in this document without notice. SemiQ products are sold pursuant to SemiQ’s terms and conditions of sale in place at the time of order acknowledgement. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control. SemiQ makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SemiQ assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using SemiQ products. To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by SemiQ. SemiQ reserves the right to make changes, corrections, modifications, and improvements of datasheet without notice. Rev. 1.3, 10/16/2020 www.SemiQ.com p.6