DXG50S120JU

DXG50S120JU IGBT Features     1200V 50A,VCE(sat)(typ.) = 2.30 V@50A 10μs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Benefits    High Efficiency for Motor Control. Rugged Performance. Excellent Current Sharing in Parallel Operation Absolute Maxinmun Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage 1200 V VGES Gate-Emitter Voltage ±30 V Continuous Collector Current ( T C=25 ℃) 100 A Continuous Collector Current ( T C=100℃) 50 A Pulsed Collector Current (Note 1) 200 A IF Diode Continuous Forward Current ( T C=100 ℃) 50 A IFM Diode Maximum Forward Current (Note 1) 200 A tsc Short Circuit Withstand Time 10 us Isc Short Circuit Current 300 A Maximum Power Dissipation ( T C=25 ℃) 657 W Maximum Power Dissipation ( T C=100℃) 263 W Operating Junction Temperature Range -55 to +150 ℃ Storage Temperature Range -55 to +150 ℃ Max. Units IC ICM PD TJ TSTG Thermal Characteristics Symbol Parameter Rth j-c Thermal Resistance, Junction to case for IGBT 0.19 ℃/ W Rth j-c Thermal Resistance, Junction to case for Diode 0.74 ℃/ W Rth j-a Thermal Resistance, Junction to Ambient 40 ℃/ W -1Total 2 Pages Rev1. 2017 DXG50S120JU Electrical Characteristics (TC=25℃ unless otherwise noted ) Symbol Parameter Test Conditions Min. Typ. Max. Units 1200 - - V BVCES Collector-Emitter Breakdown Voltage VGE= 0V, IC= 250uA ICES Collector-Emitter Leakage Current VCE= 1200V, VGE= 0V - - 250 uA Gate Leakage Current, Forward VGE=30V, VCE= 0V - - 100 nA Gate Leakage Current, Reverse VGE= -30V, VCE= 0V - - -100 nA VGE(th) Gate Threshold Voltage VGE= VCE, IC= 250uA 4.5 - 5.7 V VCE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC= 50A - 2.3 2.5 V Qg Total Gate Charge - 400 nC Qge Gate-Emitter Charge - 31 nC Qgc Gate-Collector Charge - 230 nC t d(on) Turn-on Delay Time - 43 - ns tr Turn-on Rise Time - 100 - ns t d(off) Turn-off Delay Time - 432 - ns tf Turn-off Fall Time - 36 - ns Eon Turn-on Switching Loss - 5.20 - mJ Eoff Turn-off Switching Loss - 2.00 - mJ Ets Total Switching Loss - 7.20 - mJ Cies Input Capacitance - 2870 - pF Coes Output Capacitance - 370 - pF Cres Reverse Transfer Capacitance - 230 - pF RGint Integrated gate resistor IGES VCC=960V VGE=15V IC=50A VCC=600V VGE=15V IC=50A RG=10 Inductive Load TC=25 ℃ VCE=25V VGE=0V f = 1MHz f=1M;Vpp=1V Ω 2.9 Electrical Characteristics of Diode (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Units VF Diode Forward Voltage IF=50A - 1.9 trr Diode Reverse Recovery Time - 190 Irr Diode peak Reverse Recovery Current VCE = 600V IF= 50A - 23.5 - A Qr r Diode Reverse Recovery Charge dIF/dt = 500A/us - 1916 - nC - V ns Notes： 1. Repetitive Rating: Pulse width limited by maximum junction temperature -2Total 2 Pages Rev1. 2017