SE4942B

May 2015 SE4942B N-Channel Enhancement-Mode MOSFET Revision: A Features General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device For a single MOSFET    VDS = 40V RDS(ON) = 7mΩ @ VGS=10V RDS(ON) = 16mΩ @ VGS=4.5V Pin configurations See Diagram below D1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D1 D2 D2 G2 G1 S2 S1 Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Drain Current Total Power Dissipation Continuous Pulsed @TA=25℃ Operating Junction Temperature Range ShangHai Sino-IC Microelectronic Co., Ltd. ID 12 32 A PD 2 W TJ -55 to 150 ℃ 1. SE4942B Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS= 40V, VGS=0V IGSS Gate-Body Leakage Current VGS=20 V Gate Threshold Voltage VDS= VGS, ID=250μA VGS(th) RDS(ON) VSD Static Drain-Source On-Resistance Diode Forward Voltage 40 V 1 μA 100 nA 3.0 V 7 13 mΩ VGS=4.5V, ID=6.4A 16 22 mΩ IS=1.8A 0.8 1.2 V VGS=10V, ID=7.4A 1.5 - DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=15V, Coss Output Capacitance Crss Reverse Transfer Capacitance f=1MHz 884 pF 124 pF 39 pF SWITCHING PARAMETERS td(on) Turn-On Delay Time VDD=20V, RL=20Ω 15 ns td(off) Turn-Off Delay Time RGEN=10Ω 45 ns td(r) Turn-On Rise Time RG=6Ω 11 ns td(f) Turn-Off Fall Time 6 ns Thermal Resistance Symbol RθJA Parameter Junction to Ambient (each bin with recommended lands) ShangHai Sino-IC Microelectronic Co., Ltd. Typ Max Units - 62.5 ℃/W 2. SE4942B Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE4942B Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE4942B Package Outline Dimension SOP-8 ShangHai Sino-IC Microelectronic Co., Ltd. 5. SE4942B The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC - Printed in China - All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.com Website: http://www.sino-ic.com ShangHai Sino-IC Microelectronic Co., Ltd. 6.