MMBD914

MMBD914 Silicon Epitaxial Planar Switching Diode Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 1 2 Marking Code: 5D TO-236 Plastic Package Applications • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Reverse Voltage VR 100 V Forward Current IF 200 mA Non-repetitive Peak Forward Surge Current (t = 1 μs) IFSM 4 A Power Dissipation Ptot 350 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit VF - 1 V V(BR)R 100 - V Reverse Current at VR = 20 V at VR = 75 V IR - 25 5 nA µA Reverse Recovery Time at IF = IR = 10 mA trr - 4 ns Total Capacitance at VR = 0 , f = 1 MHz CT - 4 pF Forward Voltage at IF = 10 mA Reverse Breakdown Voltage at IR = 100 µA SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 MMBD914 SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01