ESD73011N
ESD73011N
1-Line, Bi-directional, Ultra-low Capacitance
http//:www.omnivision-group.com
Transient Voltage Suppressors
Descriptions
The ESD73011N is an ultra-low capacitance TVS (Transient
Voltage Suppressor) designed to protect high speed data
interfaces. It has been specifically designed to protect
sensitive electronic components which are connected to data
DFN1006-2L (Bottom View)
and transmission lines from over-stress caused by ESD
(Electrostatic Discharge).
The
ESD73011N
incorporates
one
pair
of
ultra-low
capacitance steering diodes plus a TVS diode.
The ESD73011N may be used to provide ESD protection up
to ±20kV (contact discharge) according to IEC61000-4-2,
Pin2
Pin1
and withstand peak pulse current up to 5.5A (8/20μs)
according to IEC61000-4-5.
The ESD73011N is available in DFN1006-2L package.
Standard products are Pb-free and Halogen-free.
Pin configuration
Features
Stand-off voltage: 5V Max.
Transient protection for each line according to
Pin1
D*
Pin2
IEC61000-4-2 (ESD): ±20kV (contact discharge)
IEC61000-4-5 (surge): 5.5A (8/20μs)
D = Device code
Ultra-low capacitance: CJ = 0.40pF typ.
* = Month code (A~Z)
Ultra-low leakage current: IR < 1nA typ.
Low clamping voltage: VCL = 9.5V typ. @ IPP = 16A (TLP)
Solid-state silicon technology
Marking (Top View)
Order information
Applications
Device
USB 2.0 and USB 3.0
HDMI 1.3 and HDMI 1.4
SATA and eSATA
DVI
IEEE 1394
PCI Express
Portable Electronics
Notebooks
Will Semiconductor Ltd.
Package
Shipping
ESD73011N-2/TR DFN1006-2L 10000/Tape&Reel
1
Revision 1.3, 2022/4/22
ESD73011N
Absolute maximum ratings
Parameter
Symbol
Rating
Unit
Peak pulse power (tp = 8/20μs)
Ppk
46
W
Peak pulse current (tp = 8/20μs)
IPP
5.5
A
ESD according to IEC61000-4-2 air discharge
±20
VESD
ESD according to IEC61000-4-2 contact discharge
±20
kV
TJ
125
oC
Operating temperature
TOP
-40~85
oC
Lead temperature
TL
260
oC
TSTG
-55~150
oC
Junction temperature
Storage temperature
Electrical characteristics (TA=25 oC, unless otherwise noted)
I
VRWM Reverse stand-off Voltage
IR
Reverse leakage current
VCL
Clamping voltage
IPP
Peak pulse current
IPP
IHOLD
VHOLD
VTRIG VBR
VCLVRWM
IBR
ITRIG
IR
IR
I
ITRIG BR
VBRVTRIG V
VRWMVCL
VHOLD
IHOLD
VTRIG Reverse trigger voltage
ITRIG
Reverse trigger current
VBR
Reverse breakdown voltage
IBR
Reverse breakdown current
VHOLD Reverse holding voltage
IPP
IHOLD
Reverse holding current
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.3, 2022/4/22
ESD73011N
Electrical characteristics (TA=25 oC, unless otherwise noted)
Parameter
Symbol
Reverse maximum working voltage
VRWM
Reverse leakage current
IR
Condition
Min.
VRWM = 5V
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