SMBJ60CAHR5G

SMBJ SERIES Taiwan Semiconductor 600W, 5V - 170V Surface Mount Transient Voltage Suppressor FEATURES ● ● ● ● ● ● ● ● ● KEY PARAMETERS Ideal for automated placement Glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps Typical IR less than 1μA above 10V Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VWM 5 - 170 V VBR (uni - directional) 6.4 - 231 V VBR (bi - directional) 6.4 - 231 V PPK 600 W APPLICATIONS TJ MAX 150 Package DO-214AA (SMB) Configuration Single die ● Protect sensitive circuit from damage by high voltage transients ● Lighting, ESD transient voltage protection of IC, system ● Inductive switching load protection of IC, system ● Electrical Fast Transient Immunity protection of IC, system MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.090g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Non-repetitive peak impulse power dissipation with (1) 10/1000µs waveform Steady state power dissipation at TA = 25°C Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load for Uni-directional only SYMBOL VALUE UNIT PPK 600 W PD 3 W IFSM 100 A Forward Voltage @ IF = 50A for Uni-directional only VF 3.5 / 5.0 V Junction temperature TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 Notes: 1. Non-repetitive current pulse per Fig.3 and derated above TA = 25°C per Fig.2 2. VF = 3.5V on SMBJ5.0 - SMBJ90 devices and VF = 5.0V on SMBJ100 - SMBJ170 devices °C (2) Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types SMBJ5.0 - types SMBJ170 2. Electrical characteristics apply in both directions 1 Version: R2104 SMBJ SERIES Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case thermal resistance RӨJC 10 °C/W Junction-to-ambient thermal resistance RӨJA 55 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Part number SMBJ5.0 SMBJ5.0A SMBJ5V0A SMBJ6.0 SMBJ6.0A SMBJ6V0A SMBJ6.5 SMBJ6.5A SMBJ6V5A SMBJ7.0 SMBJ7.0A SMBJ7V0A SMBJ7.5 SMBJ7.5A SMBJ7V5A SMBJ8.0 SMBJ8.0A SMBJ8V0A SMBJ8.5 SMBJ8.5A SMBJ8V5A SMBJ9.0 SMBJ9.0A SMBJ9V0A SMBJ10 SMBJ10A SMBJ11 SMBJ11A SMBJ12 SMBJ12A SMBJ13 SMBJ13A SMBJ14 SMBJ14A SMBJ15 SMBJ15A SMBJ16 SMBJ16A SMBJ17 SMBJ17A SMBJ18 SMBJ18A SMBJ20 SMBJ20A SMBJ22 SMBJ22A SMBJ24 SMBJ24A Marking code Breakdown voltage VBR@IT (V) (Note 1) Test current IT (mA) Working stand-off voltage VWM (V) Maximum blocking leakage current ID@VWM (µA) Maximum peak impulse current IPP (A) (Note 2) Maximum clamping voltage VC@IPP (V) Min Max KD 6.40 7.30 10 5.0 800 65.0 9.6 KE 6.40 7.00 10 5.0 800 68.0 9.2 KF 6.67 8.15 10 6.0 800 55.0 11.4 KG 6.67 7.37 10 6.0 800 61.0 10.3 KH 7.22 8.82 10 6.5 500 51.0 12.3 KK 7.22 7.98 10 6.5 500 56.0 11.2 KL 7.78 9.51 10 7.0 200 47.0 13.3 KM 7.78 8.60 10 7.0 200 52.0 12.0 KN 8.33 10.3 1 7.5 100 44.0 14.3 KP 8.33 9.21 1 7.5 100 48.0 12.9 KQ 8.89 10.9 1 8.0 50 42.0 15.0 KR 8.89 9.83 1 8.0 50 46.0 13.6 KS 9.44 11.5 1 8.5 10 39.0 15.9 KT 9.44 10.4 1 8.5 10 43.0 14.4 KU 10.0 12.2 1 9.0 5 37.0 16.9 KV 10.0 11.1 1 9.0 5 40.0 15.4 KW KX KY KZ LD LE LF LG LH LK LL LM LN LP LQ LR LS LT LU LV LW LX LY LZ 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 13.6 12.3 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 24 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 33.0 37.0 31.0 34.0 28.0 31.0 26.0 29.0 24.4 27.0 23.1 25.1 21.8 24.2 20.0 22.8 19.5 21.5 17.6 19.4 15.0 17.7 14.6 16.0 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 2 Version: R2104 SMBJ SERIES Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Part number SMBJ26 SMBJ26A SMBJ28 SMBJ28A SMBJ30 SMBJ30A SMBJ33 SMBJ33A SMBJ36 SMBJ36A SMBJ40 SMBJ40A SMBJ43 SMBJ43A SMBJ45 SMBJ45A SMBJ48 SMBJ48A SMBJ51 SMBJ51A SMBJ54 SMBJ54A SMBJ58 SMBJ58A SMBJ60 SMBJ60A SMBJ64 SMBJ64A SMBJ70 SMBJ70A SMBJ75 SMBJ75A SMBJ78 SMBJ78A SMBJ85 SMBJ85A SMBJ90 SMBJ90A SMBJ100 SMBJ100A SMBJ110 SMBJ110A SMBJ120 SMBJ120A SMBJ130 SMBJ130A SMBJ150 SMBJ150A SMBJ160 SMBJ160A SMBJ170 Marking code MD ME MF MG MH MK ML MM MN MP MQ MR MS MT MU MV MW MX MY MZ ND NE NF NG NH NK NL NM NN NP NQ NR NS NT NU NV NW NX NY NZ PD PE PF PG PH PK PL PM PN PP PQ Breakdown voltage VBR@IT (V) (Note 1) Min 28.9 28.9 31.1 31.1 33.3 33.3 36.7 36.7 40.0 40.0 44.4 44.4 47.8 47.8 50.0 50.0 53.3 53.3 56.7 56.7 60.0 60.0 64.4 64.4 66.7 66.7 71.1 71.1 77.8 77.8 83.3 83.3 86.7 86.7 94.4 94.4 100 100 111 111 122 122 133 133 144 144 167 167 178 178 189 Max 35.3 31.9 38.0 34.4 40.7 36.8 44.9 40.6 48.9 44.2 54.3 49.1 58.4 52.8 61.1 55.3 65.1 58.9 69.3 62.7 73.3 66.3 78.7 71.2 81.5 73.7 86.9 78.6 95.1 86 102 92.1 106 95.8 115 104 122 111 136 123 149 135 163 147 176 159 204 185 218 197 231 Test current IT (mA) Working stand-off voltage VWM (V) Maximum blocking leakage current ID@VWM (µA) Maximum peak impulse current IPP (A) (Note 2) Maximum clamping voltage VC@IPP (V) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 26 26 28 28 30 30 33 33 36 36 40 40 43 43 45 45 48 48 51 51 54 54 58 58 60 60 64 64 70 70 75 75 78 78 85 85 90 90 100 100 110 110 120 120 130 130 150 150 160 160 170 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 13.5 14.9 12.6 13.8 11.7 13.0 10.6 11.8 9.8 10.8 8.8 9.7 8.2 9.0 7.8 8.6 7.3 8.1 6.9 7.6 6.5 7.2 6.1 6.7 5.8 6.5 5.5 6.1 5.0 5.5 4.7 5.2 4.5 5.0 4.1 4.6 3.9 4.3 3.5 3.8 3.2 3.5 2.9 3.2 2.7 3.0 2.3 2.5 2.2 2.4 2.0 46.6 42.1 50.0 45.4 53.5 48.4 59.0 53.3 64.3 58.1 71.4 64.5 76.7 69.4 80.3 72.7 85.5 77.4 91.1 82.4 96.3 87.1 103 93.6 107 96.8 114 103 125 113 134 121 139 126 151 137 160 146 179 162 196 177 214 193 231 209 266 243 287 259 304 3 Version: R2104 SMBJ SERIES Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Part number SMBJ170A Marking code PR Breakdown voltage VBR@IT (V) (Note 1) Min 189 Max 209 Test current IT (mA) Working stand-off voltage VWM (V) Maximum blocking leakage current ID@VWM (µA) Maximum peak impulse current IPP (A) (Note 2) Maximum clamping voltage VC@IPP (V) 1 170 1 2.2 275 Notes: 1. VBR measure after IT applied for 30ms, IT = square wave pulse or equivalent. 2. Surge current waveform per Fig.3 and derate per Fig.2. 3. All terms and symbols are consistent with ANSI/IEEE C62.35. 4. For bidirectional use C or CA suffix for types SMBJ5.0 - SMBJ170 5. For bipolar types having VWM of 10V (SMBJ10C) and under, the ID limit is doubled. ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING SMBJx DO-214AA (SMB) 3,000 / Tape & Reel Notes: 1. "x" defines voltage from 5V(SMBJ5.0) to 170V(SMBJ170A) 4 Version: R2104 SMBJ SERIES Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Peak Pulse Power Rating Curve Fig.2 Pulse Derating Curve 125 PEAK PULSE POWER(PPP) OR CURRENT (IPP) A DERATING IN PERCENTAGE (%) PPPM, PEAK PULSE POWER, KW 100 NON-REPETITIVE PULSE WAVEFORM SHOWN in Fig.3 10 1 0.1 0.1 1 10 100 1000 100 75 50 25 0 10000 0 tp, PULSE WIDTH, (μs) 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig.3 Clamping Power Pulse Waveform Fig.4 Maximum Non-Repetitive Forward Surge Current 100 Pulse width(td) is defined as the point where the peak current decays to 50% of IPPM 120 PEAK FORWARD SURGE CURRENT (A) IPPM, PEAK PULSE CURRENT (%) 140 Rise time tr=10μs to 100% 100 Peak value IPPM 80 60 Half value-IPPM/2 10/1000μs, waveform 40 20 td 0 0 0.5 1 1.5 2 2.5 3 8.3ms single half sine wave UNIDIRECTIONAL ONLY 10 1 10 100 NUMBER OF CYCLES AT 60 Hz t, TIME (ms) 5 Version: R2104 SMBJ SERIES Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Typical Junction Capacitance CJ, JUNCTION CAPACITANCE (pF) 10000 VR=0 1000 VR-rated stand-off voltage 100 f=1.0MHz Vsig=50mVp-p 10 1 10 100 V(BR), BREAKDOWN VOLTAGE (V) 6 Version: R2104 SMBJ SERIES Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AA (SMB) SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Cathode band for uni-directional products only 7 Version: R2104 SMBJ SERIES Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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