MMBT4401

MMBT4401 MMBT3904 AO3400 SI2305 MMBT4401 TRANSISTOR ( NPN) FEATURES • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT4403) Ideal for Medium Power Amplification and Switching SOT-23 1．BASE 2．EMITTER 3．COLLECTOR MARKING: 2X MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ RӨJA Thermal Resistance, junction to Ambient 417 ℃/mW ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V Collector cut-off current ICBO VCB=50 V, IE=0 0.1 μA Collector cut-off current ICEO VCE=30 V, IB=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA DC current gain hFE VCE=1V, IC=150mA Collector-emitter saturation voltage VCE(sat) IC=150mA, Base-emitter saturation voltage VBE(sat) IC= 150mA, IB=15mA fT Transition frequency www.tw-gmc.com 1 B=15mA VCE= 10V, IC= 20mA f = 100MHz 100 250 300 0.4 V 0.95 V MHz MMBT4401 MMBT3904 AO3400 SI2305 Typical Characteristics Static Characteristic 250 200 DC CURRENT GAIN 0.7mA 0.6mA 0.5mA 100 0.4mA 0.3mA 50 IC Ta=100℃ hFE IC 0.9mA 150 —— COMMON EMITTER VCE= 1V 1mA 0.8mA COLLECTOR CURRENT (mA) hFE 1000 COMMON EMITTER Ta=25℃ Ta=25℃ 100 0.2mA IB=0.1mA 0 0 2 1 3 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 10 4 1 VCEsat 1000 600 (mA) IC Ta=100 ℃ 200 0 0.1 1 10 100 COLLECTOR CURRENT IC 600 —— IC Ta=100 ℃ 100 400 Ta=25℃ 10 0.5 0.1 600 VBE fT 800 1000 10 1200 10 BASE-EMMITER VOLTAGE VBE (mV) Cob/Cib —— IC COMMON EMITTER VCE=10V Ta=25℃ fT 600 400 (mA) 100 Ta=25℃ 1 200 —— 600 100 IC TRANSITION FREQUENCY (MHz) IC Ta=100 ℃ 10 500 100 10 1 COLLECTOR CURRENT (mA) COMMON EMITTER VCE=1V COLLECTOR CURRENT (mA) — — COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=25℃ 100 600 100 β=10 800 0 IC VCE (V) IC β=10 0.1 10 COLLECTOR CURRENT VCB/VEB 20 COLLECTOR CURRENT PC 400 — — IC 30 40 (mA) Ta f=1MHz IE=0/IC=0 Ta=25 ℃ CAPACITANCE (pF) C COLLECTOR POWER DISSIPATION PC (mW) Cib 10 Cob 1 0.1 200 100 0 1 REVERSE VOLTAGE www.tw-gmc.com 300 10 V 30 0 25 50 75 AMBIENT TEMPERATURE (V) 1 2 100 Ta 125 (℃ ) 150 MMBT4401 MMBT3904 AO3400 SI2305 PACKAGE OUTLINE Plastic surface mounted package; 3 leads www.tw-gmc.com SOT-23 1 3 2