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ESDLC3V3D3B

ESDLC3V3D3B

  • 厂商:

    YINT(音特电子)

  • 封装:

    SOD323

  • 描述:

    ESDLC3V3D3B

  • 数据手册
  • 价格&库存
ESDLC3V3D3B 数据手册
ESD Protection Diode ESDLC3V3D3B Trustworthy electronic circuit protection expert ESDLC3V3D3B Description ESDLC3V3D3B is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its small size, ultra-low capacitance values , it is very suitable for signal port and board space speed transmission is very small places, such as Functional Diagram Ethernet, mobile phones , MP3 players, digital cameras and other portable. Features ●Ultra low leakage: nA level ●Operating voltage: 3.3V ●Package: SOD-323 ●Protects one I/O line (unidirection) ●Low clamping voltage Applications ●Complies with following standards: ●Cell Phone Handsets and Accessories – IEC 61000-4-2 (ESD) immunity test ●Microprocessor based equipment Air discharge: ±15kV ●Personal Digital Assistants (PDA’s) Contact discharge: ±8kV ●Notebooks, Desktops, and Servers – IEC61000-4-4 (EFT) 40A (5/50ns) ●Portable Instrumentation – IEC61000-4-5 (Lightning) 12A (8/20μs) ●Peripherals ●USB Interface Absolute Maximum Ratings(Tamb=25°C unless otherwise specified) Parameter Peak Pulse Power (8/20µs) ESD per IEC 61000−4−2 (Air) Symbol Value Unit PPP 350 Watts ±15 KV ±8 KV VESD ESD per IEC 61000−4−2 (Contact) Lead Soldering Temperature TL 260 (10 sec) °C Operating Temperature Range TJ -55 to +150 °C Storage Temperature Range TSTJ -55 to +150 °C www.yint.com.cn 1 Rev:19.3 ESD Protection Diode ESDLC3V3D3B Trustworthy electronic circuit protection expert Electrical Characteristics (TA = 25 °C unless otherwise noted) Parameter Reverse Stand-off Voltage Reverse Breakdown Voltage Reverse Leakage Current Symbol Conditions Min. Typ. VRWM 3.3 VBR It = 1mA VR IR Clamping Voltage VC Junction Capacitance CJ Max. 4 =VRWM Units V V 40 μA IPP=1A, tP = 8/20μs 7.5 V IPP=21A, tP = 8/20μs 15 V VR=0V, f = 1MHz 1 pF Characteristics Curves Figure 1- Power Derating Curve Figure 2- ESD Pulse Waveform (according to IEC 61000-4-2) Figure3- 8/20µs Pulse Waveform www.yint.com.cn 2 Rev:19.3 ESD Protection Diode ESDLC3V3D3B Trustworthy electronic circuit protection expert ACKAGE OTLINE DIMENSIONS in millimeters (inches) :SOD3B23 Mounting Pad Layout Disclaimer Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. www.yint.com.cn 3 Rev:19.3
ESDLC3V3D3B 价格&库存

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