1.5KE6.8CA-R0

1.5KE SERIES Taiwan Semiconductor 1500W, 6.8V - 440V Transient Voltage Suppressor FEATURES ● ● ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Excellent clamping capability Low dynamic impedance 1500W surge capability at 10/1000μs waveform Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional Typical IR less than 1μA above 10V Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VWM 5.5 - 376 V VBR (uni - directional) 6.12 - 462 V VBR (bi - directional) 6.12 - 462 V PPK 1500 W TJ MAX 175 Package DO-201 APPLICATIONS ● Protect sensitive circuit from damage by high voltage transients ● Lighting, ESD transient voltage protection of IC, system ● Inductive switching load protection of IC, system ● Electrical Fast Transient Immunity protection of IC, system MECHANICAL DATA ● ● ● ● ● ● Case: DO-201 Molding compound meets UL 94V-0 flammability rating Terminal: Pure tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.090g (approximately) DO-201 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT PPK 1500 W PD 5 W IFSM 200 A Forward Voltage @ IF = 50A for Uni-directional only VF 3.5 / 5.0 V Junction temperature TJ - 55 to +175 °C Storage temperature TSTG - 55 to +175 Notes: 1. Non-repetitive Current Pulse Per Fig.3 and Derated above TA = 25°C Per Fig.2 2. Mounted on Copper Pad Area of 0.6" x 0.6" (16mm x 16mm) 3. VF = 3.5V for Devices of VBR ≦ 200V and VF = 5.0V Max. for Devices VBR > 200V °C (1) Peak power dissipation at TA = 25°C, Tp = 1ms Steady state power dissipation at TL = 75°C (2) lead lengths .375", 9.5mm Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load for Uni-directional only (3) Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types 1.5KE6.8 - Types 1.5KE440 2. Electrical characteristics apply in both directions 1 Version: O2104 1.5KE SERIES Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) JEDEC type number 1N6267 General part number 1.5KE6.8 Nominal Voltage Breakdown voltage VBR@IT (V) (Note 1) Min Max Maximum Working Test blocking stand-off current leakage voltage IT current VWM (mA) ID@VWM (V) (µA) Maximum peak Maximum Maximum impulse clamping temperature current voltage coefficient IPP VC@IPP of VBR(%/°C) (A) (V) (Note 2) 6.8 6.12 7.48 10 5.50 1000 145 10.8 0.057 1N6267A 1.5KE6.8A 6.8 6.45 7.14 10 5.80 1000 150 10.5 0.057 1N6268 7.5 6.75 8.25 10 6.05 500 134 11.7 0.061 1N6268A 1.5KE7.5A 1.5KE7.5 7.5 7.13 7.88 10 6.40 500 139 11.3 0.061 1N6269 8.2 7.38 9.02 10 6.63 200 126 12.5 0.065 1N6269A 1.5KE8.2A 1.5KE8.2 8.2 7.79 8.61 10 7.02 200 130 12.1 0.065 1N6270 9.1 8.19 10.00 1.0 7.37 50 114 13.8 0.068 1N6270A 1.5KE9.1A 1.5KE9.1 9.1 8.65 9.55 1.0 7.78 50 117 13.4 0.068 1N6271 10 9.00 11.00 1.0 8.10 10 105 15.0 0.073 1N6271A 1.5KE10A 1.5KE10 10 9.50 10.5 1.0 8.55 10 108 14.5 0.073 1N6272 11 9.90 12.1 1.0 8.92 1 97 16.2 0.075 1N6272A 1.5KE11A 1.5KE11 11 10.5 11.6 1.0 9.40 1 100 15.6 0.075 1N6273 12 10.8 13.2 1.0 9.72 1 91 17.3 0.078 1N6273A 1.5KE12A 1.5KE12 12 11.4 12.6 1.0 10.20 1 94 16.7 0.078 1N6274 13 11.7 14.3 1.0 10.50 1 82 19.0 0.081 1N6274A 1.5KE13A 1.5KE13 13 12.4 13.7 1.0 11.10 1 86 18.2 0.081 1N6275 15 13.5 16.5 1.0 12.10 1 71 22.0 0.084 1N6275A 1.5KE15A 1.5KE15 15 14.3 15.8 1.0 12.80 1 74 21.2 0.084 1N6276 16 14.4 17.6 1.0 12.90 1 67 23.5 0.086 1N6276A 1.5KE16A 16 15.2 16.8 1.0 13.60 1 70 22.5 0.086 1N6277 18 16.2 19.8 1.0 14.50 1 59 26.5 0.088 1N6277A 1.5KE18A 18 17.1 18.9 1.0 15.30 1 60 25.5 0.088 1N6278 20 18.0 22.0 1.0 16.20 1 54 29.1 0.090 1N6278A 1.5KE20A 20 19.0 21.0 1.0 17.10 1 56 27.7 0.090 1N6279 22 19.8 24.2 1.0 17.80 1 49 31.9 0.092 1N6279A 1.5KE22A 22 20.9 23.1 1.0 18.80 1 51 30.6 0.092 1N6280 24 21.6 26.4 1.0 19.40 1 45 34.7 0.094 1N6280A 1.5KE24A 24 22.8 25.2 1.0 20.50 1 47 33.2 0.094 1N6281 27 24.3 29.7 1.0 21.80 1 40 39.1 0.096 1N6281A 1.5KE27A 27 25.7 28.4 1.0 23.10 1 42 37.5 0.096 1N6282 30 27.0 33.0 1.0 24.30 1 36 43.5 0.097 1N6282A 1.5KE30A 30 28.5 31.5 1.0 25.60 1 38 41.4 0.097 1N6283 33 29.7 36.3 1.0 26.80 1 33 47.7 0.098 1N6283A 1.5KE33A 33 31.4 34.7 1.0 28.20 1 34 45.7 0.098 1N6284 36 32.4 39.6 1.0 29.10 1 30 52.0 0.099 1N6284A 1.5KE36A 36 34.2 37.8 1.0 30.80 1 31 49.9 0.099 1N6285 39 35.1 42.9 1.0 31.60 1 27 56.4 0.100 1N6285A 1.5KE39A 39 37.1 41.0 1.0 33.30 1 29 53.9 0.100 1N6286 43 38.7 47.3 1.0 34.80 1 25 61.9 0.101 1N6286A 1.5KE43A 43 40.9 45.2 1.0 36.80 1 26 59.3 0.101 1N6287 47 42.3 51.7 1.0 38.10 1 23 67.8 0.101 47 44.7 49.4 1.0 40.20 1 24 64.8 0.101 1.5KE16 1.5KE18 1.5KE20 1.5KE22 1.5KE24 1.5KE27 1.5KE30 1.5KE33 1.5KE36 1.5KE39 1.5KE43 1.5KE47 1N6287A 1.5KE47A 2 Version: O2104 1.5KE SERIES Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) JEDEC type number 1N6288 General part number 1.5KE51 Nominal Voltage Breakdown voltage VBR@IT (V) (Note 1) Min Max Maximum Working Test blocking stand-off current leakage voltage IT current VWM (mA) ID@VWM (V) (µA) Maximum peak Maximum Maximum impulse clamping temperature current voltage coefficient IPP VC@IPP of VBR(%/°C) (A) (V) (Note 2) 51 45.9 56.1 1.0 41.30 1 21 73.5 0.102 1N6288A 1.5KE51A 51 48.5 53.6 1.0 43.60 1 22 70.1 0.102 1N6289 56 50.4 61.6 1.0 45.40 1 19 80.5 0.103 1N6289A 1.5KE56A 1.5KE56 56 53.2 58.8 1.0 47.80 1 20 77.0 0.103 1N6290 62 55.8 68.2 1.0 50.2 1 17 89.0 0.104 1N6290A 1.5KE62A 1.5KE62 62 58.9 65.1 1.0 53.0 1 18 85.0 0.104 1N6291 68 61.2 74.8 1.0 55.1 1 16 98.0 0.104 1N6291A 1.5KE68A 1.5KE68 68 64.6 71.4 1.0 58.1 1 17 92.0 0.104 1N6292 75 67.5 82.5 1.0 60.7 1 14 108 0.105 1N6292A 1.5KE75A 1.5KE75 75 71.3 78.8 1.0 64.1 1 15 103 0.105 1N6293 82 73.8 90.2 1.0 66.4 1 13 118 0.105 1N6293A 1.5KE82A 1.5KE82 82 77.9 86.1 1.0 70.1 1 13.9 113 0.105 1N6294 91 81.9 100 1.0 73.7 1 12 131 0.106 1N6294A 1.5KE91A 1.5KE91 91 86.5 95.5 1.0 77.8 1 12.6 125 0.106 1N6295 100 90 110 1.0 81.0 1 10.9 144 0.106 1N6295A 1.5KE100A 1.5KE100 100 95 105 1.0 85.5 1 11.4 137 0.106 1N6296 110 99 121 1.0 89.2 1 9.9 158 0.107 1N6296A 1.5KE110A 1.5KE110 110 105 116 1.0 94.0 1 10.3 152 0.107 1N6297 120 108 132 1.0 97.2 1 9.1 173 0.107 1N6297A 1.5KE120A 120 114 126 1.0 102 1 9.5 165 0.107 1N6298 130 117 143 1.0 105 1 8.4 187 0.107 1N6298A 1.5KE130A 130 124 137 1.0 111 1 8.7 179 0.107 1N6299 150 135 165 1.0 121 1 7.3 215 0.108 1N6299A 1.5KE150A 150 143 158 1.0 128 1 7.6 207 0.108 1N6300 160 144 176 1.0 130 1 6.8 230 0.108 1N6300A 1.5KE160A 160 152 168 1.0 136 1 7.1 219 0.108 1N6301 170 153 187 1.0 138 1 6.4 244 0.108 1N6301A 1.5KE170A 170 162 179 1.0 145 1 6.7 234 0.108 1N6302 180 162 198 1.0 146 1 6.1 258 0.108 1N6302A 1.5KE180A 180 171 189 1.0 154 1 6.4 246 0.108 1N6303 200 180 220 1.0 162 1 5.4 287 0.108 1.5KE120 1.5KE130 1.5KE150 1.5KE160 1.5KE170 1.5KE180 1.5KE200 1N6303A 1.5KE200A 200 190 210 1.0 171 1 5.7 274 0.108 1.5KE220 220 198 242 1.0 175 1 4.5 344 0.110 1.5KE220A 220 209 231 1.0 185 1 4.8 328 0.110 1.5KE250 250 225 275 1.0 202 1 4.3 360 0.110 1.5KE250A 250 237 263 1.0 214 1 4.5 344 0.110 1.5KE300 300 270 330 1.0 243 1 3.6 430 0.110 1.5KE300A 300 285 315.0 1.0 256 1 3.8 414 0.110 1.5KE350 350 315 385 1.0 284 1 3.1 504 0.110 1.5KE350A 350 333 368 1.0 300 1 3.2 482 0.110 1.5KE400 400 360 440 1.0 324 1 2.7 574 0.110 1.5KE400A 400 380 420 1.0 342 1 2.8 548 0.110 1.5KE440 440 396 484 1.0 356 1 2.4 631 0.110 3 Version: O2104 1.5KE SERIES Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) JEDEC type number General part number Nominal Voltage 1.5KE440A 440 Breakdown voltage VBR@IT (V) (Note 1) Min Max 418 462 Maximum Working Test blocking stand-off current leakage voltage IT current VWM (mA) ID@VWM (V) (µA) 1.0 376 1 Maximum peak Maximum Maximum impulse clamping temperature current voltage coefficient IPP VC@IPP of VBR(%/°C) (A) (V) (Note 2) 2.5 602 0.110 Notes: 1. VBR measure after IT applied for 30ms, IT = square wave pulse or equivalent. 2. Surge current waveform per Fig.3 and derate per Fig.2. 3. For bipolar types having VWM of 10 volts and under, the ID limit is doubled. 4. All terms and symbols are consistent with ANSI/IEEE C62.35. ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING 1.5KEx DO-201 1,250 / Tape & Reel 1.5KEx A0G DO-201 500 / Ammo box 1.5KExH DO-201 1,250 / Tape & Reel 1.5KExHA0G DO-201 500 / Ammo box Notes: 1. "x" defines voltage from 6.8V(1.5KE6.8) to 440V(1.5KE440A) 2. "H" means AEC-Q101 qualified 4 Version: O2104 1.5KE SERIES Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Peak Pulse Power Rating Curve Fig.2 Pulse Derating Curve 125 PEAK PULSE POWER(PPP) OR CURRENT (IPP) A DERATING IN PERCENTAGE (%) PPPM, PEAK PULSE POWER, KW 100 NON-REPETITIVE PULSE WAVEFORM SHOWN in Fig.3 10 1 0.1 0.1 1 10 100 1000 With heat sink 100 75 50 25 Without heat sink 0 10000 0 tp, PULSE WIDTH, (μs) 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig.3 Clamping Power Pulse Waveform Fig.4 Maximum Non-Repetitive Forward Surge Current 200 Pulse width(td) is defined as the point where the peak current decays to 50% of IPPM 120 PEAK FORWARD SURGE CURRENT (A) IPPM, PEAK PULSE CURRENT (%) 140 Rise time tr=10μs to 100% 100 Peak value IPPM 80 60 Half value-IPPM/2 10/1000μs, waveform 40 20 td 0 0 0.5 1 1.5 2 2.5 3 180 160 140 120 100 8.3ms single half sine wave UNIDIRECTIONAL ONLY 80 60 40 20 0 1 10 100 NUMBER OF CYCLES AT 60 Hz t, TIME (ms) 5 Version: O2104 1.5KE SERIES Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Typical Junction Capacitance CJ, JUNCTION CAPACITANCE (pF) 10000 VR=0 1000 100 VR-rated stand-off voltage f=1.0MHz Vsig=50mVp-p 10 1 10 100 V(BR), BREAKDOWN VOLTAGE (V) 6 Version: O2104 1.5KE SERIES Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-201 MARKING DIAGRAM Cathode band for uni-directional products only 7 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: O2104 1.5KE SERIES Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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