PSBD2ED40V1H

PSBD2ED40V1H Schottky Barrier Diode Feature  Small mold type. (DFN1608-2L)  Low IR  High reliability. Construction Applications   Low current rectification Silicon epitaxial planar Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 2 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Electrical characteristics per line@25℃ Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF - 0.57 0.63 V IF=1A Forward voltage VF - 0.45 0. 50 V IF=0.5A Reverse current IR - - 0.1 mA VR=40V Cj - 90 - pF Junction Capacitance VR=0V f =1MHz Absolute maximum rating@25℃ Parameter Symbol limits Unit Reverse voltage (DC) VRM 40 V Average rectified forward current Io 1 A IFSM 7 A Operating Junction temperature Range Tj -55 to +125 ℃ Storage temperature Tstg -40 to +125 ℃ Peak Forward Surge Current 8.3ms Single Half Sine Wave Superimposed on Rated Load Rev.06. 6 1 www.prisemi.com Schottky Barrier Diode PSBD2ED40V1H Typical Characteristics 100 IR –Reverse Current （mA） 1000 IF –Forward Current （mA） 100 10 1.0 25℃ 0.1 0.01 0.1 0.2 0.3 0.4 0.5 75℃ 1 0.1 25℃ 0.01 -25℃ 0.001 0 0.001 0.0 125℃ 10 0.6 0 10 20 30 VF – Forward Voltage （V） VR – Reverse Voltage （V） Fig 1.Forward Voltage Fig 2.Leakage Current 40 Solder Reflow Recommendation Peak Temp=257℃, Ramp Rate=0.802deg. ℃/sec 280 240 200 160 120 80 40 0 0 30 60 90 120 150 180 240 210 270 300 330 360 390 420 450 480 Time (sec) Rev.06.6 2 www.prisemi.com Schottky Barrier Diode PSBD2ED40V1H Product dimension (DFN1608-2L) A A1 G G Millimeters Dim E B F D H 1.00 C 0.30 MIN MAX A 0.75 0.85 A1 0.00 0.25 B 1.55 1.65 C 0.46 0.55 D 0.00 0.04 E 0.72 0.80 F 0.32 0.40 G 0.00 0.10 H 0.67 0.75 0.60 0.80 Notes: This recommended land pattern is for reference purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met. Ordering information Device Package Shipping PSBD2ED40V1H DFN1608-2L(Pb-free) 5000 / Tape & Reel Rev.06.6 3 www.prisemi.com Schottky Barrier Diode PSBD2ED40V1H IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi) ,Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: http://www.prisemi.com For additional information, please contact your local Sales Representative. ©Copyright 2009, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev.06.6 4 www.prisemi.com