SPF65R90G

SPC65R90G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25oC (mΩ) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration Features 700 VGS=10V 90 85 15 25 single      New Technology For High Voltage Device ID=30A(Vgs=10V) Ultra Low Gate Charge Improved dv/dt Capability RoHS compliant Applications Switching Mode Power Supplies (SMPS) Server and Telecom Power Supplies Welding& Battery Chargers Solar(PV Inverters) AC/DC Bridge Circuits      Schematic diagram TO-220F ORDERING INFORMATION Device SPC65R90G Device Package TO-220F Marking 65R90G ABSOLUTE MAXIMUM RATINGS (TC = 25oC, unless otherwise noted) Parameter Drain to Source Voltage Symbol Limit Unit VDSS 650 V o Continuous Drain Current (@TC=25 C) (1) A 19 (1) A (1) A ID 30 Drain current pulsed (2) IDM 90 Gate to Source Voltage VGS ± 30 V Single pulsed Avalanche Energy (3) EAS 810 mJ dv/dt 25 V/ns dv/dt 15 PD 33.8 V/ns W 0.27 -55 to + 150 260 W/oC o C o C 0.4~0.6 N.m o Continuous Drain Current (@TC=100 C) MOSFET dv/dt ruggedness (@VDS=0~400V) Peak diode Recovery dv/dt (4) Total power dissipation (@TC=25oC) Derating Factor above 25oC Operating Junction Temperature & Storage Temperature Maximum lead temperature for soldering purpose Mounting torque (5) TSTG, TJ TL Notes 1. Drain current is limited by maximum junction temperature. 2. Repetitive rating : pulse width limited by junction temperature. 3 L =20mH, I AS = 9A, VDD = 50V, RG=25Ω, Starting at TJ = 25oC 4. ISD ≤ ID, di/dt = 100A/us, VDD ≤ BVDSS, Starting at TJ =25oC 5. Mounting consideration for TO220 Fullpack: M3 screw plus flat washer is suggested, free of burr between devices and contact area, the devices are to be mounted to a hole not larger than 3.6mm in contact diameter (chamfer included). 18-1204-Rev 00 1 Document Number: 18030 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. SPC65R90G Sinai Power Technologies www.sinai-power.com THERMAL CHARACTERISTICS Parameter Value Symbol Thermal resistance, Junction to case Rthjc Thermal resistance, Junction to ambient Unit o C/W 3.7 Rthja o C/W 38 ELECTRICAL CHARACTERISTICS ( TC = 25oC unless otherwise specified ) Parameter Off Characteristics Drain to source breakdown voltage Breakdown voltage temperature coefficient Drain to source leakage current Gate to source leakage current, forward Gate to source leakage current, reverse On Characteristics Gate threshold voltage Drain to source on state resistance Forward Transconductance Gate Resistance Symbol Test conditions BVDSS VGS=0V, ID=250uA ΔBVDSS / ΔTJ IDSS IGSS VGS(TH) RDS(ON) Gfs Rg Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rising time Turn off delay time Fall time Total gate charge Gate-source charge Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Gate-drain charge Qgd Min. Typ. Max. Unit 650 -- -- V ID=250uA, referenced to 25oC -- 0.38 -- V/oC VDS=650V, VGS=0V VDS=520V, TC=125oC VGS=30V, VDS=0V VGS=-30V, VDS=0V ----- ----- 1 50 100 -100 uA uA nA nA 2.5 --- -80 28 1.2 4.5 90 -- V mΩ S Ω ---------- 3010 102 2.5 32 72 110 67 65 15 -------85 -- -- 25 -- VDS=VGS, ID=250uA VGS=10V, ID =15A VDS = 30 V, ID=15A VDS = 0 V VGS=0V, VDS=200V, f=1MHz VDS=320V, ID=15A， RG=25Ω VDS=520V, VGS=10V, ID=30A pF ns nC SOURCE TO DRAIN DIODE RATINGS CHARACTERISTICS Parameter Continuous source current Symbol Test conditions Min. Typ. Max. Unit IS -- -- 30 A -- -- 90 A Pulsed source current ISM Integral reverse p-n Junction diode in the MOSFET Diode forward voltage drop. VSD IS=30A, VGS=0V -- 0.9 1.2 V Reverse recovery time Trr -- 405 -- ns Reverse recovery Charge Qrr IS=15A, VGS=0V, dIF/dt=100A/us -- 6.8 -- uC 18-1204-Rev 00 2 Document Number: 18030 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. Sinai Power Technologies Fig1. Output characteristics www.sinai-power.com Fig2. Maximum Drain Current vs. Case Temperature Fig3. Gate charge characteristics Fig 4. Capacitance Characteristics Fig 6. - Temperature vs. Drain-to-Source Voltage Fig 5. RDS(ON) vs junction temperature 18-1204-Rev 00 SPC65R90G 3 Document Number: 18030 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. SPC65R90G Sinai Power Technologies Fig 7 . Safe operating area www.sinai-power.com Fig 8. Forward characteristics of reverse diode Fig 9 . Transient thermal impedance Fig 10. Gate charge test circuit & waveform VGS QG 10V QGS QGD Charge 18-1204-Rev 00 4 nC Document Number: 18030 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. SPC65R90G Sinai Power Technologies www.sinai-power.com Fig 11. Switching time test circuit & waveform VDS RL 90% VDS RGS VDD VIN 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig 12. Unclamped Inductive switching test circuit & waveform Fig 13. Peak diode recovery dv/dt test circuit & waveform DUT + VDS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period 18-1204-Rev 00 VF VDD Body diode forward voltage drop 5 Document Number: 18030 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. Sinai Power Technologies SPC65R90G www.sinai-power.com Disclaimer  SINAI assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SINAI products described or contained herein.  Specifications of any and all SINAI products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.  In the event that any or all SINAI products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.  This catalog provides information as of Nov. 2014. Specifications and information herein are subject to change without notice. 18-1204-Rev 00 6 Document Number: 18030 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED.