SS32F THRU SS320F SMAF
Surface Mount Schottky Barrier Rectifier
Pinning
Reverse Voltage - 20 to 200 V
1.Cathode
Forward Current - 3 A
2.Anode
1
FEATURES
Metal silicon junction, majority carrier conduction
For surface mounted applications
Low power loss, high efficiency
2
SMAF
High forward surge current capability
Marking Code
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
SS32F
SS32
SS34F
SS34
Lead free in comply with EU RoHS 2011/65/EU directives
SS36F
SS36
MECHANICAL DATA
Case: SMAF
Terminals: Solderable per MIL-STD-750, Method 2026
SS38F
SS38
SS310F
SS310
SS312F
SS312
SS315F
SS315
SS320F
SS320
Approx. Weight: 27mg / 0.00095oz
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 ° ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols
SS32F
SS34F
SS36F
SS38F
SS310F
SS312F
SS315F
SS320F
Units
Maximum Repetitive Peak Reverse Voltage
VRRM
20
40
60
80
100
120
150
200
V
Maximum RMS voltage
VRMS
14
28
42
56
70
84
105
140
V
Maximum DC Blocking Voltage
VDC
20
40
60
80
100
120
150
200
V
Maximum Average Forward Rectified Current
IF(AV)
Peak Forward Surge Current, 8.3ms Single Half Sinewave Superimposed On Rated Load (JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage at 3 A
VF
Maximum Instantaneous Reverse Current TA = 25°C
at Rated DC Reverse Voltage
TA = 100°C
IR
Typical Junction Capacitance(1)
Cj
Typical Thermal Resistance
(2)
Operating Junction Temperature Range
Storage Temperature Range
3.0
A
80
0.55
70
0.70
0.95
0.85
0.3
3
0.5
5
250
180
A
V
mA
pF
RθJA
70
°C/W
Tj
-55 ~ +150
°C
Tstg
-55 ~ +150
°C
(1)Measured at 1 MHz and applied reverse voltage of 4 V D.C
(2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
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Dongguan YFW Electronics Co, Ltd.
SS32F THRU SS320F SMAF
Fig.2 Typical Reverse Characteristics
Instaneous Reverse Current ( μA)
Average Forward Current (A)
Fig.1 Forward Current Derating Curve
3.5
3.0
2.4
1.8
1.2
0.6
Single phase half-wave 60 Hz
resistive or inductive load
0.0
25
75
50
100
125
150
10 4
SS32F/SS36F
SS38F-SS320F
10
1
T J =25°C
10 0
0
40
20
60
80
100
Percent of Rated Peak Reverse Voltage(%)
Fig.3 Typical Forward Characteristic
Fig.4 Typical Junction Capacitance
T J =25°C
Junction Capacitance ( pF)
20
10
1.0
SS32F/SS34F
SS34AF/SS38F
SS310F/SS312F
SS315F/SS320F
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1000
500
200
100
20
SS32F~SS38F
SS32F~SS36F
SS310F~SS320F
SS38F~SS320F
10
1.8
0.1
10
1
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Fig.5- Typical Transient Thermal Impedance
Transient Thermal Impedance( °C /W)
Instaneous Forward Current (A)
T J =75°C
10 2
Case Temperature (°C)
Peak Forward Surage Current (A)
T J =100°C
10 3
100
SS32F-SS38F
SS310F-SS320F
80
60
40
20
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
Number of Cycles at 60Hz
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100
10
1
0.01
0.1
1
10
100
t, Pulse Duration(sec)
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Dongguan YFW Electronics Co, Ltd.
SS32F THRU SS320F SMAF
SMAF
Package Outline
Plastic surface mounted package; 2 leads
∠ALL ROUND
C
A
∠ALL ROUND
HE
g
g
pad
e
E
A
pad
D
E
A
V M
Top View
A
C
D
E
e
g
HE
max
1.1
0.20
3.7
2.7
1.6
1.2
4.9
min
0.9
0.12
3.3
2.4
1.3
0.8
4.4
max
43
7.9
146
106
63
47
193
min
35
4.7
130
94
51
31
173
UNIT
mm
mil
Bottom View
∠
7°
The recommended mounting pad size
1.6
(63)
2.2
(86)
1.8
(71)
1.6
(63)
mm
Unit :
(mil)
Summary of Packing Options
Package
SMAF
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Packing Description
Packing Quantity
Industry Standard
Tape/Reel,13”reel
10000
EIA-481-1
Tape/Reel,7”reel
3000
EIA-481-1
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Dongguan YFW Electronics Co, Ltd.
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