HSBA6048

HSBA6048 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6048 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSBA6048 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. VDS 60 V RDS(ON),max 3.6 mΩ ID 85 A PRPAK5X6 Pin Configuration ⚫ ⚫ ⚫ ⚫ ⚫ Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V 85 A ID@TC=25℃ ID@TC=100℃ Continuous Drain Current 1,6 Continuous Drain Current 1,6 66 A IDM Pulsed Drain Current2 240 A EAS Single Pulse Avalanche Energy3 101 mJ IAS Avalanche Current 45 A 83 W PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 www.hs-semi.cn Ver 2.0 Typ. 1 Max. Unit --- 55 ℃/W --- 1.5 ℃/W 1 HSBA6048 N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance 2 VGS(th) IDSS Gate Threshold Voltage Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V VGS=10V , ID=20A --- 3.0 3.6 m VGS=4.5V , ID=15A --- 4.4 5.4 m VGS=VDS , ID =250uA 1.2 --- 2.3 V VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 65 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 0.7 ---  Qg Total Gate Charge (10V) --- 58 --- Qgs Gate-Source Charge --- 16 --- Qgd Gate-Drain Charge --- 4 --- --- 18 --- Td(on) VDS=30V , VGS=10V , ID=20A Turn-On Delay Time nC Rise Time VDD=30V , VGS=10V , RG=3, --- 8 --- Turn-Off Delay Time ID=20A --- 50 --- Fall Time --- 10.5 --- Ciss Input Capacitance --- 3458 --- Coss Output Capacitance --- 1522 --- Crss Reverse Transfer Capacitance --- 22 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 55 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V --- 24 --- nS --- 85 --- nC Tr Td(off) Tf VDS=30V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Diode Forward Current 1,5 Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions IF=20A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=50V,VGS=10V,L=0.1mH,IAS=40A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and I DM , in real applications , should be limited by total power dissipation. 6.The maximum current rating is package limited. www.hs-semi.cn Ver 2.0 2 HSBA6048 N-Ch 60V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Diode Forward Voltage vs. Current Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs TJ Fig.6 Normalized RDSON vs TJ www.hs-semi.cn Ver 2.0 3 HSBA6048 N-Ch 60V Fast Switching MOSFETs Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM SINGLE T ON T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform www.hs-semi.cn Ver 2.0 4