HS1DFL RVG

HS1AFL – HS1MFL Taiwan Semiconductor 1A, 50V - 1000V High Efficient Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Low profile package Low power loss, high efficiency Fast switching for high efficiency Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 1 A VRRM 50 - 1000 V IFSM 30 A TJ MAX 150 °C Package SOD-123FL Configuration Single die APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application MECHANICAL DATA ● ● ● ● ● ● Case: SOD-123FL Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 0.019g (approximately) SOD-123FL ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.3ms single half sine-wave superimposed on rated load Junction temperature Storage temperature SYMBOL HS1A HS1B HS1D HS1F HS1G HS1J HS1K HS1M UNIT FL FL FL FL FL FL FL FL HAF HBF HDF HFF HGF HJF HKF HMF VRRM 50 100 200 300 400 600 800 1000 V VR(RMS) 35 70 140 210 280 420 560 700 V IF 1 A IFSM 30 A TJ - 55 to +150 °C TSTG - 55 to +150 °C 1 Version: B2103 HS1AFL – HS1MFL Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 17 °C/W Junction-to-ambient thermal resistance RӨJA 85 °C/W Junction-to-case thermal resistance RӨJC 19 °C/W Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS HS1AFL HS1BFL HS1DFL HS1FFL Forward voltage (1) HS1GFL TYP MAX UNIT 0.82 - V 0.89 0.95 V 0.67 - V IF = 1.0A, TJ = 125°C 0.75 0.81 V IF = 0.5A, TJ = 25°C 0.93 - V 1.01 1.30 V 0.74 - V IF = 1.0A, TJ = 125°C 0.85 1.10 V IF = 0.5A, TJ = 25°C 1.21 - V 1.36 1.70 V 0.94 - V 1.10 1.38 V - 5 µA - 150 µA 11 - pF 6 - pF - 50 ns - 75 ns IF = 0.5A, TJ = 25°C IF = 1.0A, TJ = 25°C IF = 0.5A, TJ = 125°C IF = 1.0A, TJ = 25°C IF = 0.5A, TJ = 125°C HS1JFL IF = 1.0A, TJ = 25°C HS1KFL HS1MFL IF = 0.5A, TJ = 125°C IF = 1.0A, TJ = 125°C Reverse current @ rated VR TJ = 25°C (2) Junction capacitance Reverse recovery time VF VF VF IR TJ = 125°C HS1AFL HS1BFL HS1DFL HS1FFL HS1GFL HS1JFL HS1KFL HS1MFL HS1AFL HS1BFL HS1DFL HS1FFL HS1GFL HS1JFL HS1KFL HS1MFL SYMBOL 1MHz, VR = 4.0V IF = 0.5A , IR = 1.0A Irr = 0.25A CJ trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING HS1xFL SOD-123FL 10,000 / Tape & Reel Notes: 1. “x” defines voltage from 50V(HS1AFL) to 1000V(HS1MFL) 2 Version: B2103 HS1AFL – HS1MFL Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.2 Typical Junction Capacitance 1.5 100 1 10 CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) Fig.1 Forward Current Derating Curve 0.5 HS1AFL - HS1GFL HS1JFL - HS1MFL 1 f=1.0MHz Vsig=50mVp-p 0 0.1 25 50 75 100 125 150 1 10 REVERSE VOLTAGE (V) LEAD TEMPERATURE (°C) Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics 10 10 HS1AFL - HS1FFL 1 TJ=125°C 0.1 0.01 TJ=25°C 0.001 10HS1AFL - HS1FFL UF1DLW 1 TJT=125°C J=125°C TJ=25°C 0.1 (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) 100 1 TJ=25°C 0.01 Pulse width 0.001 0.3 0.4 0.5 0.6 Pulse0.9 width 300μs 0.8 1 1.1 1% duty cycle 0.7 0.1 10 20 30 40 50 60 70 80 90 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 3 Version: B2103 1.2 HS1AFL – HS1MFL Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Forward Characteristics HS1GFL 1 TJ=125°C 0.1 0.01 TJ=25°C 10HS1GFL UF1DLW 1 TJ=125°C TJ=125°C 1 TJ=25°C 0.1 TJ=25°C 0.01 Pulse width 0.001 0.3 0.4 0.5 0.6 0.7 Pulse width 300μs 1% duty 0.8 0.9cycle1 1.1 1.2 0.1 0.001 10 20 30 40 50 60 70 80 90 100 0.5 0.7 0.9 1.1 1.3 1.5 1.7 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.7 Typical Reverse Characteristics Fig.8 Typical Forward Characteristics 1.9 10 HS1JFL - HS1MFL TJ=125°C 10 1 0.1 TJ=25°C 10HS1JFL - HS1MFL UF1DLW 1 TJ=125°C TJ=125°C 1 TJ=25°C 0.1 (A) 100 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) 10 (A) 10 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.5 Typical Reverse Characteristics TJ=25°C 0.01 0.7 Pulse width Pulse width 300μs 1% duty 0.8 0.9cycle1 1.1 1.6 1.8 0.001 0.3 0.4 0.5 0.6 0.1 0.01 10 20 30 40 50 60 70 80 90 0.6 100 0.8 1 1.2 1.4 2 2.2 2.4 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 4 Version: B2103 1.2 HS1AFL – HS1MFL Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS SOD-123FL SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code YW = Date Code F = Factory Code Version: B2103 HS1AFL – HS1MFL Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: B2103