SS315F

山东晶导微电子有限公司 SS32F THRU SS320F Jingdao Microelectronics Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A PINNING PIN Features • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: SS32 — SS320 Simplified outline SMAF and symbol MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 27mg / 0.00095oz Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter SS32F SS34F SS34AF SS36F SS38F SS310F SS312F SS315F SS320F Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 45 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 31.5 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 45 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) 3.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 80 A Max Instantaneous Forward Voltage at 3 A VF 0.55 T a =100°C Typical Junction Capacitance （1） Typical Thermal Resistance （2） Operating Junction Temperature Range Storage Temperature Range 0.85 0.95 IR 0.5 5 0.3 3 Cj 250 180 Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage 0.70 V mA pF RθJA 70 RθJC 18 Tj -55 ~ +125 °C T stg -55 ~ +150 °C °C/W （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.10 SMAF-S-SS32F~SS320F-3A200V Page 1 of 3 山东晶导微电子有限公司 SS32F THRU SS320F Jingdao Microelectronics Fig.2 Typical Reverse Characteristics 3.5 3.0 2.4 1.8 1.2 0.6 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 75 50 100 125 150 Instaneous Reverse Current ( μA) Average Forward Current (A) Fig.1 Forward Current Derating Curve 10 4 SS32F/SS36F SS38F-SS320F 10 1 T J =25°C 10 0 0 60 80 100 Fig.4 Typical Junction Capacitance T J =25°C Junction Capacitance ( pF) 20 10 1.0 SS32F/SS34F SS34AF/SS38F SS310F/SS312F SS315F/SS320F 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 500 200 100 20 SS32F~SS38F SS32F~SS36F SS310F~SS320F SS38F~SS320F 10 1.8 0.1 1 10 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.5- Typical Transient Thermal Impedance 100 SS32F-SS38F SS310F-SS320F 80 60 40 20 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 1000 Instaneous Forward Voltage (V) 10 100 Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) 40 20 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Peak Forward Surage Current (A) T J =75°C 10 2 Case Temperature (°C) 100 Number of Cycles at 60Hz 2016.10 T J =100°C 10 3 10 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 SS32F THRU SS320F Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMAF ∠ALL ROUND C A ∠ALL ROUND HE g Top View mil Bottom View A C D E e g HE max 1.2 0.20 3.7 2.7 1.6 1.2 4.9 min 0.9 0.12 3.3 2.4 1.3 0.8 4.4 max 47 7.9 146 106 63 47 193 min 35 4.7 130 94 51 31 173 UNIT mm g pad e E A pad D E A V M ∠ 7° SS26F The recommended mounting pad size Marking Type number 2.2 (86) 1.6 (63) SS22F SS24F 1.8 (71) 1.6 (63) mm Unit ： (mil) 2016.10 610205A0 Marking code SS32F SS32 SS34F SS34 SS34AF SS34A SS36F SS36 SS38F SS38 SS310F SS310 SS312F SS312 SS315F SS315 SS320F SS320 Page 3 of 3