ASDM30N90Q-R

ASDM30N90Q 30V N-Channel MOSFET Product Summary General Features ● Low Gate Charge ● Advanced Trench Technology VDS 30 V ● High Power and Current Handling Capability RDS(on),Typ.@ VGS=10 V 4.3 mΩ Application ID 90 A ● Provide Excellent RDS(ON) ● Load Swtich ● PWM applications ● Power management DFN5*6-8 N-Channel Absolute Maximum Ratings (TA =25ºC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current B TC =100ºC A Avalanche Current Single Pulse Avalanche Energy C L =0.3mH Units VDS 30 V VGS ±20 V ID A Pulsed Drain Current Power Dissipation TC =25ºC Maximum A TC =25ºC A 40 IDM 360 A IS 90 A EAS 135 mJ 65 W 32 W TJ, TSTG -55 to 175 ºC Symbol Maximum Units PD TC =100ºC Junction and Storage Temperature Range 90 Thermal Characteristics Parameter Maximum Junction-to-Case Steady-State RƟJC 2.3 Maximum Junction-to-Ambient Steady-State RƟJA 62 ºC/W FEB 2019 Version1.0 1/9 www.ascendsemi.com 0755-86970486 ASDM30N90Q 30V N-Channel MOSFET Electrical Characteristics(TJ =25ºC unless otherwise noted) Value Symbol Parameter Conditions Units Min Typ Max 30 -- -- TJ =25ºC -- -- 1 TJ =125ºC -- -- 25 STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID =250µA,VGS =0V IDSS Zero Gate Voltage Drain Current VDS =30V, VGS =0V V μA IGSS Gate-Body Leakage Current VDS =0V, VGS =±20V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS =VGS, ID =250µA 1 1.6 2.4 V VGS =10V, ID =30A -- 4.3 5.2 mΩ RDS(ON) Static Drain-Source On-Resistance VGS =4.5V, ID =30A -- 6.9 9.0 mΩ gFS Forward Transconductance VDS =10V, ID =20A 16 -- -- S VSD Diode Forward Voltage IS =30A, VGS =0V -- -- 1 V IS Maximum Body-Diode Continuous Current -- -- 90 A -- 2120 -- -- 307 -- -- 253 -- -- 40 -- -- 5.4 -- B DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS =0V, VDS =15V, f =1MHZ pF SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge -- 9.6 -- tD(on) Turn-On Delay Time -- 15 -- tr Turn-On Rise Time -- 32 -- tD(off) Turn-Off Delay Time -- 15 -- tf Turn-Off Fall Time -- 12 -- trr Body Diode Reverse Recovery Time -- 23 -- ns Qrr Body Diode Reverse Recovery Charge -- 48 -- nC VGS =10V,VDS =15V, ID =30A VGS =10V,VDS =15V, ID =20A, RG =3Ω IF =30A, di/dt =100A/μs nC ns A. Single pulse width limited by maximum junction temperature. B. The maximum current rating is package limited. C. The power dissipation PD is based on TJ(MAX) =175ºC, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. FEB 2019 Version1.0 2/9 www.ascendsemi.com 0755-86970486 ASDM30N90Q 30V N-Channel MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted 120 80 100 ID (A) 100 ID (A) 120 10V 8V 6V 4.5V 4V 3.5V 60 80 60 40 40 20 20 0 0 1 2 3 4 VDS = 15V TJ = 125ºC TJ = 25ºC 0 5 0 1 2 VDS (Volts) Figure 1: On-Region Characteristics 5 6 10000 9 TJ = 25ºC Capacitance (pF) RDS(on) (mΩ) 4 Figure 2: Transfer Characteristics 10 8 7 VGS = 4.5V 6 5 Ciss 1000 Coss Crss 100 VGS = 10V 4 VGS = 0 f = 1MHz 3 10 2 0 5 10 15 20 25 0 30 ID (A) Figure 3: On-Resistance vs. Drain Current 5 10 15 20 25 30 VDS (Volts) Figure 4: Capacitance Characteristics 12 100 10 VDD = 15V IS (A) VGS (Volts) 3 VGS (Volts) 8 TJ = 125ºC 10 6 4 TJ = 25ºC 1 2 0 0 10 20 30 40 50 Qg (nC) Figure 5: Gate Charge Characteristics FEB 2019 Version1.0 3/9 0.1 0.2 0.4 0.6 0.8 1 VSD (Volts) Figure 6: Body Diode Forward Voltage www.ascendsemi.com 0755-86970486 1.2 ASDM30N90Q 30V N-Channel MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted 1.3 Normalized Vgs(th) Normalized RDS(on) 1.6 VGS = 10V ID = 30A 1.4 1.2 1.0 0.8 0.6 1.2 ID = 250µA 1.1 1.0 0.9 0.4 0.8 0.2 0.7 0.0 0.6 -50 -25 0 25 50 75 100 125 150 -50 -25 0 Temperature(ºC) Figure 7: On-Resistance vs. Junction Temperature 50 75 100 125 150 Figure 8: Vgs(th) vs. Junction Temperature 1.15 20 VGS = 0 ID = 250uA 1.10 18 RDS(on) (mΩ) Normalized BVDSS 25 Temperature(ºC) 1.05 VGS = 10V ID = 30A 16 14 12 10 1.00 8 TJ = 125ºC 6 0.95 4 2 TJ = 25ºC 0 -50 -25 0 25 50 75 100 125 150 2 TJ, Junction Temperature (ºC) Figure 9: BVDSS vs. Junction Temperature 4 5 6 7 8 9 10 1000 10 1 RDS(on) limited 100 10 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 0.1 0.01 1E-05 3 VGS, Gate-to-Source Voltage (V) Figure 10: On-Resistance vs. Gate-Source Voltage ID (Amps) Z Ɵ JC Normalized Transient Thermal Resistance 0.90 tp = 10us tp = 100us tp = 1ms tp = 10ms DC 1 0.1 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Transient Thermal Resistance FEB 2019 Version1.0 4/9 0.1 1 10 100 VDS (Volts) Figure 12: Safe Operating Area www.ascendsemi.com 0755-86970486 1000 ASDM30N90Q 30V N-Channel MOSFET Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms FEB 2019 Version1.0 5/9 www.ascendsemi.com 0755-86970486 ASDM30N90Q 30V N-Channel MOSFET Figure 4:Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel) FEB 2019 Version1.0 6/9 www.ascendsemi.com 0755-86970486 ASDM30N90Q 30V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM30N90Q-R 30N90 DFN5*6-8 Tape&Reel 4000/Reel MARKING PACKAGE DFN5*6-8 FEB 2019 Version1.0 30N90 7/9 www.ascendsemi.com 0755-86970486 ASDM30N90Q 30V N-Channel MOSFET DFN5*6- 8 PACKAGE IN FORMATION FEB 2019 Version1.0 8/9 www.ascendsemi.com 0755-86970486 ASDM30N90Q 30V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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