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1N5818W

1N5818W

  • 厂商:

    JINGDAO(晶导微电子)

  • 封装:

    SOD123FL

  • 描述:

    肖特基二极管 独立式 IF=1A Cj=110pF SOD123FL 550mV 25A

  • 数据手册
  • 价格&库存
1N5818W 数据手册
山东晶导微电子有限公司 1N5817W THRU 1N5819W Jingdao Microelectronics SCHOTTKY BARRIER RECTIFIERS FEATURES PINNING • Metal silicon junction, majority carrier conduction PIN DESCRIPTION • Guarding for overvoltage protection 1 Cathode • Low power loss, high efficiency 2 Anode 1 2 • High current capability • low forward voltage drop • High surge capability Top View Marking Code: 1N5817W---12A 1N5818W---13A 1N5819W---14A • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Simplified outline SOD-123FL and symbol MECHANICAL DATA • Case: SOD-123FL • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight:15mg 0.00048oz Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Symbols 1N5817W 1N5818W 1N5819W Units Maximum Repetitive Peak Reverse Voltage V RRM 20 30 40 V Maximum RMS voltage V RMS 14 21 28 V Maximum DC Blocking Voltage V DC 20 30 40 V Maximum Average Forward Rectified Current I F(AV) 1 A Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed On Rated Load (JEDEC method) I FSM 25 A at 1 A at 3 A VF Parameter Maximum Instantaneous Forward Voltage 0.45 0.75 0.55 0.875 0.6 0.9 V Maximum Instantaneous Reverse Current at TA = 25°C Rated DC Reverse Voltage TA = 100°C IR 1 10 mA Typical Junction Capacitance Cj 110 pF T j , T stg -55 ~ +150 °C Storage and Operating Junction Temperature Range 2016.01 SOD123FL-S-1N5817W~1N5819-1A40V Page 1 of 3 山东晶导微电子有限公司 1N5817W THRU 1N5819W Jingdao Microelectronics Fig.2 Typical Reverse Characteristics Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 75 50 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve 10 4 10 3 T J =125°C 10 2 T J =75°C 10 1 T J =25°C 10 0 0 Case Temperature (°C) Fig.3 Typical Forward Characteristic 60 80 100 Fig.4 Typical Junction Capacitance 500 5° C =2 TJ 12 5°C 0.5 Junction Capacitance ( pF) 1.0 TJ = Instaneous Forward Current (A) 40 20 Percent of Rated Peak Reverse Voltage(%) 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 200 100 50 20 10 0.7 0.1 1 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 30 8.3 ms Single Half Sine Wave (JEDEC Method) 25 20 15 10 05 00 1 10 100 Number of Cycles at 50Hz 2016.01 www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 1N5817W THRU 1N5819W Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123FL ∠ALL ROUND C A ∠ALL ROUND VM D E A g Top View mil Bottom View A C D E e g HE max 1.1 0.20 2.9 1.9 1.1 0.9 3.8 min 0.9 0.12 2.6 1.7 0.8 0.7 3.5 max 43 7.9 114 75 43 35 150 min 35 4.7 102 67 31 28 138 UNIT mm g pad e E A pad HE ∠ 7° The recommended mounting pad size Marking 2.0 (79) 1.2 (47) Type number Marking code 1N5817W 12A 1N5818W 13A 1N5819W 14A 1.2 (47) 1.2 (47) Unit: mm (mil) 2016.01 XTH601152B8 Page 3 of 3
1N5818W 价格&库存

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