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HSS2312

HSS2312

  • 厂商:

    HUASHUO(华朔)

  • 封装:

    SOT23L

  • 描述:

    MOSFETs N-Channel 20V 6A SOT23L 1.4W

  • 数据手册
  • 价格&库存
HSS2312 数据手册
HSS2312 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2312 is the high cell density trenched Nch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSS2312 meet the RoHS and Green Product requirement with full function reliability approved. VDS 20 V RDS(ON),typ 15 mΩ ID 6 A SOT23L Pin Configuration ⚫ ⚫ ⚫ ⚫ Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ ±12 V Continuous Drain Current, VGS @ 4.5V1 6 A Continuous Drain Current, VGS @ 4.5V1 5 A Current2 24 A PD@TA=25℃ Total Power Dissipation3 1.4 W PD@TA=70℃ Total Power Dissipation3 0.9 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ IDM Pulsed Drain Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-ambient 1 90 ℃/W www.hs-semi.cn Ver2.0 1 HSS2312 N-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.018 --- V/℃ VGS=4.5V , ID=6A --- 15 20 VGS=2.5V , ID=5A --- 19 28 0.5 0.7 1.0 V --- -3.1 --- mV/℃ VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=4A --- 10 --- S Qg Total Gate Charge (4.5V) --- 12 --- Qgs Gate-Source Charge --- 2.4 --- Qgd Gate-Drain Charge --- 1.1 --- Td(on) Turn-On Delay Time VDS=15V , VGS=4.5V , ID=4A nC --- 9 --- Rise Time VDS=10V , VGS=4.5V , RG=6 --- 12 --- Turn-Off Delay Time ID=6A --- 33 --- Fall Time --- 36 --- Ciss Input Capacitance --- 900 --- Coss Output Capacitance --- 220 --- Crss Reverse Transfer Capacitance --- 100 --- Min. Typ. Max. Unit --- --- 6 A --- --- 24 A --- --- 1.2 V Tr Td(off) Tf VDS=10V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current1,4 Pulsed Source Current2,4 Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver2.0 2 HSS2312 N-Ch 20V Fast Switching MOSFETs Typical Characteristics IS Source Current(A) 6 4 TJ=175℃ TJ=25℃ 2 0 0 0.3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics diode Normalized On Resistance 1.8 Normalized VGS(th) 1.4 1 0.6 0.2 -50 0 50 100 150 TJ , Junction Temperature (℃) TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 1000 100.00 100us 10.00 10ms ID (A) Capacitance (pF) Ciss 100 Coss 100ms 1.00 1s Crss 0.10 DC TA=25℃ Single Pulse F=1.0MHz 10 1 4 7 10 13 16 19 0.01 22 0.1 VDS Drain to Source Voltage (V) Fig.7 Capacitance www.hs-semi.cn 1 VDS (V) 10 100 Fig.8 Safe Operating Area Ver2.0 3 HSS2312 N-Ch 20V Fast Switching MOSFETs Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TA + PDM x RθJA 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance VDS 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Gate Charge Waveform Ver2.0 4 HSS2312 N-Ch 20V Fast Switching MOSFETs Ordering Information Part Number HSS2312 www.hs-semi.cn Package code SOT-23L Ver2.0 Packaging 3000/Tape&Reel 5
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