INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
1. FEATURES
3. DESCRIPTION
•
Easy to use
Gain set with one external resistor (gain
range 1 to 10,000)
Wide power supply range (±2V to ±19V)
Higher performance than 3 op amp IA
designs
Available in 8-lead SOIC packaging
Low power, 1.56mA supply current
The INA101/2 is a low cost, high accuracy
instrumentation amplifier that requires only one
external resistor to set gains of 1 to 10,000.
Furthermore, the INA101/2 features 8-lead SOIC
packaging that is smaller than discrete designs
and offers lower power (only 1.56mA supply
current), making it a good fit for battery-powered,
portable (or remote) applications.
•
Excellent dc performance
12μV max, input offset voltage
3.0nA max, input bias current
110dB min common-mode rejection ratio
(G = 10)
•
Low noise
14nV/√Hz @ 1kHz, input voltage noise
3μVPP noise (0.1Hz to 10Hz)
The INA101/2, with its high accuracy of 0.8ppm
maximum nonlinearity, low offset voltage of 12μV
max, is ideal for use in precision data acquisition
systems, such as weigh scales and transducer
interfaces. Furthermore, the low noise, low input
bias current, and low power of the INA101/2 make
it well suited for medical applications, such as ECG
and noninvasive blood pressure monitors.
•
Excellent ac specifications
1300kHz bandwidth (G = 1)
75μs settling time to 0.01%
•
Operating temperature
INA101: –40°C to 85°C
INA102: –55°C to 125°C
The INA101/2 works well as a preamplifier due to
its low input voltage noise of 14nV/√Hz at 1kHz,
3μVPP in the 0.1Hz to 10Hz band, and 0.35pA/√Hz
input current noise. Also, the INA101/2 is well suited
for multiplexed applications with its settling time of
75μs to 0.01%, and its cost is low enough to enable
designs with one in-amp per channel. See Table 1
for the order information.
2. APPLICATIONS
•
Weigh scales
•
ECG and medical instrumentation
•
Transducer interface
•
Data acquisition systems
•
Industrial process controls
•
Battery-powered and portable equipment
+VS
–
RG
+
–IN
40k
24.7k
40k
–
R
+
OUTPUT
24.7k
–
RG
+IN
+
REF
40k
40k
–VS
© 2023 AnalogySemi Ltd. All Rights Reserved.
Public
www.analogysemi.com | Page 1 of 25
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
Table 1 lists the order information.
Table 1. Order Information
ORDER NUMBER
CH
(#)
PACKAGE
MARK
INA101ASOIC8
INA102ASOIC8
1
1
SOIC-8
SOIC-8
INA101
INA102
IQ PER CH
BW
(TYP)
(kHz)
(mA)
1.56
1300
1.56
1300
GAIN
GAIN TYPE
OPERATING
TEMP (ºC)
PACKAGE
OPTION
1-10000
1-10000
RG
RG
−40-85
−55-125
T/R-4000
T/R-4000
GAIN
GAIN TYPE
OPERATING
TEMP (ºC)
PACKAGE
OPTION
1-10000
1-10000
10-100
10-100
10-100
10-100
2
5
10
20
25
50
75
100
125
200
250
500
2
5
10
20
25
50
75
100
125
200
250
500
RG
RG
RG and OS
RG and OS
RG and OS
RG and OS
Fixed
Fixed
Fixed
Fixed
Fixed
Fixed
Fixed
Fixed
Fixed
Fixed
Fixed
Fixed
Fixed
Fixed
Fixed
Fixed
Fixed
Fixed
Fixed
Fixed
Fixed
Fixed
Fixed
Fixed
−40-85
−55-125
−40-125
−55-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
−40-125
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
T/R-4000
Table 2. Family Selection Guide
ORDER NUMBER
CH
(#)
PACKAGE
MARK
INA111ASOIC8(1)
INA112ASOIC8(1)
INA201ASOIC8(1)
INA202ASOIC8(1)
INA211ASOIC8(1)
INA212ASOIC8(1)
INA501LASOIC8(1)
INA501MASOIC8(1)
INA501HASOIC8(1)
INA501NASOIC8(1)
INA501PASOIC8(1)
INA501RASOIC8(1)
INA501SASOIC8(1)
INA501TASOIC8(1)
INA501KASOIC8(1)
INA501JASOIC8(1)
INA501GASOIC8(1)
INA501FASOIC8(1)
INA511LASOIC8(1)
INA511MASOIC8(1)
INA511HASOIC8(1)
INA511NASOIC8(1)
INA511PASOIC8(1)
INA511RASOIC8(1)
INA511SASOIC8(1)
INA511TASOIC8(1)
INA511KASOIC8(1)
INA511JASOIC8(1)
INA511GASOIC8(1)
INA511FASOIC8(1)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
SOIC-8
INA111
INA112
INA201
INA202
INA211
INA212
INA501L
INA501M
INA501H
INA501N
INA501P
INA501R
INA501S
INA501T
INA501K
INA501J
INA501G
INA501F
INA511L
INA511M
INA511H
INA511N
INA511P
INA511R
INA511S
INA511T
INA511K
INA511J
INA511G
INA511F
IQ PER CH
BW
(TYP)
(kHz)
(mA)
0.35
130
0.35
130
1.56
2560
1.56
2560
0.35
130
0.35
130
1.56
1300
1.56
1300
1.56
1300
1.56
1300
1.56
1300
1.56
1300
1.56
1300
1.56
1300
1.56
1300
1.56
1300
1.56
1300
1.56
1300
0.35
130
0.35
130
0.35
130
0.35
130
0.35
130
0.35
130
0.35
130
0.35
130
0.35
130
0.35
130
0.35
130
0.35
130
Note : Available in the future.
Devices can be ordered via the following two ways:
1. Place orders directly on our website (www.analogysemi.com), or;
2. Contact our sales team by mailing to sales@analogysemi.com.
Page 2 of 25 | www.analogysemi.com
Public
© 2023 AnalogySemi Ltd. All Rights Reserved.
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
4. PIN CONFIGURATION AND FUNCTIONS
Figure 1 illustrates the pin configuration.
RG
1
8
RG
IN
2
7
+VS
+IN
3
6
OUTPUT
VS
4
5
REF
+
Figure 1. Pin Configuration
Table 3 lists the pin functions.
Table 3. Pin Functions
POSITION
NAME
TYPE
DESCRIPTION
Connect a resistor between two RG to set gain. See more information in the
Analog output
GAIN SELECTION section.
1, 8
RG
2
3
4
5
6
–IN
+IN
–VS
REF
OUTPUT
Analog input
Analog input
Power supply
Analog input
Analog output
Signal negative input
Signal positive input
Negative power supply
Output reference voltage input
Output
7
+VS
Power supply
Positive power supply
© 2023 AnalogySemi Ltd. All Rights Reserved.
Public
www.analogysemi.com | Page 3 of 25
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
5. SPECIFICATIONS
5.1 ABSOLUTE MAXIMUM RATINGS
Table 4 lists the absolute maximum ratings of the INA101/2.
Table 4. Absolute Maximum Ratings
PARAMETER
DESCRIPTION
Supply
Voltage
Input voltage
Current
Any pin except power supply
Output Short-Circuit Duration
Operating, TA, INA101
Operating, TA, INA102
Temperature
Storage, Tstg, Q
Soldering, 10s
MIN
MAX
UNITS
–VS – 0.3
−10
± 20
+VS + 0.3
+10
V
V
mA
85
125
150
300
°C
Indefinite
–40
–55
–65
Note 1: Stresses beyond those listed under Table 4 may cause permanent damage to the device. These are
stress ratings only, which do not imply functional operation of the device at these or any other
conditions beyond those indicated under Table 6. Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability.
Note 2: Specification is for device in free air—8-lead plastic package: θJA = 95°C.
5.2 ESD RATINGS
Table 5 lists the ESD ratings of the INA101/2.
Table 5. ESD Ratings
PARAMETER
Electrostatic
Discharge
SYMBOL
V(ESD)
DESCRIPTION
VALUE
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1), all pins
except –IN and +IN
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1), –IN and
+IN pin
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
UNITS
±2000
±3500
V
±2000
Note 1: The JEDEC document JEP155 indicates that 500V HBM allows safe manufacturing with a standard
ESD control process.
Note 2: The JEDEC document JEP157 indicates that 250V CDM allows safe manufacturing with a standard
ESD control process.
Page 4 of 25 | www.analogysemi.com
Public
© 2023 AnalogySemi Ltd. All Rights Reserved.
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
5.3 RECOMMENDED OPERATING CONDITIONS
Table 6 lists the recommended operating conditions for the INA101/2.
Table 6. Recommended Operating Conditions
PARAMETER
Operating Voltage Range
Specified Temperature Range
DESCRIPTION
Split supply
Single supply
INA101
INA102
MIN
NOM
MAX
UNITS
±2
4
–40
–55
±18
36
±19
38
85
125
V
V
°C
°C
SYMBOL
RθJA
RθJB
ψJT
ψJB
RθJC(top)
RθJC(bot)
SOIC-8
90.6
47.6
3.6
47
35
50.8
UNITS
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
5.4 THERMAL INFORMATION
Table 7 lists the thermal information for the INA101/2.
Table 7. Thermal Information
PARAMETER
Junction-to-Ambient Thermal Resistance
Junction-to-Board Thermal Resistance
Junction-to-Top Characterization Parameter
Junction-to-Board Characterization Parameter
Junction-to-Case (Top) Thermal Resistance
Junction-to-Case (Bottom) Thermal Resistance
© 2023 AnalogySemi Ltd. All Rights Reserved.
Public
www.analogysemi.com | Page 5 of 25
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
5.5 ELECTRICAL CHARACTERISTICS
Table 8 lists the electrical characteristics of INA101/2. Typical at 25°C, VS = ±18V, and RL = 2kΩ to GND, unless
otherwise noted.
Table 8. Electrical Characteristics
PARAMETER
GAIN
Gain Range
Gain Error(1)
Nonlinearity
Gain vs. Temperature
CONDITIONS
G = 1 + (49.4kΩ / RG)
VOUT = ±10V, G = 1
VOUT = ±10V, G = 10
VOUT = ±10V, G = 100
VOUT = ±10V, G = 1000
VOUT = −10V to +10V, G = 1,
RL = 10kΩ
VOUT = −10V to +10V, G =
10, RL = 10kΩ
VOUT = −10V to +10V, G =
100, RL = 10kΩ
VOUT = −10V to +10V, G =
1000, RL = 10kΩ
MIN
INA101
TYP
1
0.02
0.03
0.03
0.03
MAX
MIN
10K
0.04
0.08
0.08
0.15
1
INA102
TYP
MAX
0.02
0.03
0.03
0.03
10K
0.04
0.08
0.08
0.15
UNITS
%
%
%
%
0.8
0.8
ppm
4
4
ppm
30
30
60
60
ppm
G = 1(5)
Gain > 1(1)(5)
0.5
4
2
24
0.5
5
2.5
26
ppm/°C
ppm/°C
VS = ±18V
±2.5
±12
±2.5
± 12
μV
± 17
μV
VOLTAGE OFFSET(2)
Input Offset, VOSI
Output Offset, VOSO
VS = ±2V to ±19V,
overtemperature(5)
VS = ±2V to ±19V, average
TC(5)
±17
0.02
VS = ±18V
VS = ±2V to ±19V,
overtemperature(5)
±40
Input Bias Current
Input Offset Current
±240
±40
±420
VS = ±2V to ±19V, average
TC(5)
VS = ±2V to ±20V, G = 1
VS = ±2V to ±20V, G = 1,
overtemperature(5)
VS = ±2V to ±20V, G = 10
VS = ±2V to ±20V, G = 10,
Offset Referred to The overtemperature(5)
Input vs. Supply (PSR) VS = ±2V to ±20V, G = 100
VS = ±2V to ±20V, G = 100,
overtemperature(5)
VS = ±2V to ±20V, G = 1000
VS = ±2V to ±20V, G = 1000,
overtemperature(5)
INPUT CURRENT
0.02
0.03
108
133
108
105
126
140
125
μV
±420
μV
0.05
μV/°C
133
dB
dB
140
dB
125
144
130
130
130
±240
105
125
130
μV/°C
dB
144
dB
130
146
130
130
dB
146
dB
130
1
Overtemperature(5)
0.6
Overtemperature(5)
3
3.5
2.2
2.4
dB
1
0.6
3
10
2.2
4.0
nA
nA
nA
nA
INPUT
Input Impedance
Differential
Common-Mode
Page 6 of 25 | www.analogysemi.com
34 || 5
34 || 6
Public
34 || 5
34 || 6
GΩ_pF
GΩ_pF
© 2023 AnalogySemi Ltd. All Rights Reserved.
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
PARAMETER
Input Voltage
Range(3)
CONDITIONS
VS = ±2V to ±19V
COMMON-MODE REJECTION
VCM = (–VS + 0.1V) to (+VS –
2V), G = 1
VCM = (–VS + 0.1V) to (+VS –
2V), G = 1, overtemp(5)
VCM = (–VS + 0.1V) to (+VS –
2V), G = 10
VCM = (–VS + 0.1V) to (+VS –
2V), G = 10, overtemp(5)
Common-Mode
Rejection Ratio DC
VCM = (–VS + 0.1V) to (+VS –
2V), G = 100
VCM = (–VS + 0.1V) to (+VS –
2V), G = 100, overtemp(5)
VCM = (–VS + 0.1V) to (+VS –
2V), G = 1000
VCM = (–VS + 0.1V) to (+VS –
2V), G = 1000, overtemp(5)
OUTPUT
RL = 10kΩ, VS = ±2V to
Output Swing
±19V, overtemperature(5)
Short Circuit Current
Overtemperature
DYNAMIC RESPONSE
Small Signal –3dB
Bandwidth
Slew Rate
Settling Time to
0.01%, 10V Step
MIN
INA101
TYP
−VS + 0.1
97
MAX
MIN
+VS − 2
−VS +
0.1
104
97
90
110
124
+VS − 2
104
124
dB
dB
129
141
dB
128
157
dB
136
136
157
dB
136
+VS –
0.2
−VS + 0.2
V
dB
107
141
UNITS
dB
110
128
136
MAX
90
107
129
INA102
TYP
dB
−VS +
0.2
+VS –
0.3
V
±17
±17
mA
G=1
G = 10
G = 100
G = 1000
G = 1, 10V step
G = 100, 10V step
G=1
G = 100
1300
230
28
2.8
1.6
0.5
75
200
1300
230
28
2.8
1.6
0.5
75
200
kHz
kHz
kHz
kHz
V/μs
V/μs
μs
μs
Input, Voltage Noise, eni
Output, Voltage Noise, eno
G=1
G = 100
f = 1kHz
0.1Hz to 10Hz
14
70
3
0.38
350
10
14
70
3
0.38
350
10
nV/√Hz
nV/√Hz
μVPP
μVPP
fA/√Hz
pAPP
NOISE
Voltage Noise,
1kHz(4)
RTI, 0.1Hz to 10Hz
Current Noise
REFERENCE INPUT
RIN
Voltage Range
Reference Gain to
Output
40
−VS
40
+VS
+VS
kΩ
V
1.2
27
μV/V
1.56
±19
1.9
2
V
mA
mA
+125
°C
−VS
1.2
23
±2
1.56
±19
1.9
2
+85
−55
POWER SUPPLY
Operating Range
Quiescent Current
Overtemperature
TEMPERATURE RANGE
For Specified
Performance
±2
VS = ±2V to ±19V
© 2023 AnalogySemi Ltd. All Rights Reserved.
−40
Public
www.analogysemi.com | Page 7 of 25
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
Note 1: Does not include effects of external resistor RG.
Note 2: Total RTI Error = VOSI + VOSO / G
Note 3: One input grounded. G = 1.
Note 4: Total RTI Noise = √e2 ni + (eno / G)2
Note 5: All devices are 100% production tested at TA = +25°C. All temperature limits are guaranteed by bench
test lot.
Page 8 of 25 | www.analogysemi.com
Public
© 2023 AnalogySemi Ltd. All Rights Reserved.
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
6. TYPICAL CHARACTERISTICS
TA = 25°C, VS = ±18V, RL = 2kΩ, unless otherwise noted.
Figure 2. Typical Distribution of Input Offset Voltage
Figure 3. Typical Distribution of Input Bias Current
Figure 4. Typical Distribution of Input Offset Current
Figure 5. Input Offset Voltage vs. Common Mode Voltage
Figure 6. Input Offset Voltage vs. Temperature
Figure 7. Input Bias Current vs. Common Mode Voltage
(25°C)
© 2023 AnalogySemi Ltd. All Rights Reserved.
Public
www.analogysemi.com | Page 9 of 25
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
Figure 8. Input Bias Current vs. Common Mode
Voltage (125°C)
Figure 9. Gain vs. Temperature
Figure 10. Gain vs. Frequency
Figure 11. Bias Current vs. Temperature
Figure 12. CMRR vs. Temperature
Figure 13. Large Signal Response (G = 1)
Page 10 of 25 | www.analogysemi.com
Public
© 2023 AnalogySemi Ltd. All Rights Reserved.
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
Figure 14. Large Signal Response (G = 10)
Figure 15. Large Signal Response (G = 100)
Figure 16. Large Signal Response (G = 1000)
Figure 17. Input Voltage Noise Density
Figure 18. Input Current Noise Density
Figure 19. 0.1Hz to 10Hz RTI Voltage Noise
© 2023 AnalogySemi Ltd. All Rights Reserved.
Public
www.analogysemi.com | Page 11 of 25
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
Figure 20. 0.1Hz to 10Hz RTI Current Noise
Figure 21. Positive PSR vs. Frequency
Figure 22. Negative PSR vs. Frequency
Figure 23. Imbalance CMRR vs. Frequency
Figure 24. CMRR vs. Frequency
Figure 25. Reference Voltage vs. Output Offset Voltage
Page 12 of 25 | www.analogysemi.com
Public
© 2023 AnalogySemi Ltd. All Rights Reserved.
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
Figure 26. Gain Nonlinearity (G = 1)
Figure 27. Gain Nonlinearity (G = 10)
Figure 28. Gain Nonlinearity (G = 100)
Figure 29. Gain Nonlinearity (G = 1000)
Figure 30. Input Common-Mode Range vs.
Output Voltage
Figure 31. Input Common-Mode Range vs.
Output Voltage
© 2023 AnalogySemi Ltd. All Rights Reserved.
Public
www.analogysemi.com | Page 13 of 25
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
Figure 32. Input Common-Mode Range vs.
Output Voltage
Figure 33. Input Common-Mode Range vs.
Output Voltage
Figure 34. Input Common-Mode Range vs.
Output Voltage
Figure 35. Input Common-Mode Range vs.
Output Voltage
Figure 36. Warm-Up Time
Figure 37. VOH vs. Source Current
Page 14 of 25 | www.analogysemi.com
Public
© 2023 AnalogySemi Ltd. All Rights Reserved.
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
Figure 38. VOL vs. Sink current
© 2023 AnalogySemi Ltd. All Rights Reserved.
Public
www.analogysemi.com | Page 15 of 25
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
7. DETAILED DESCRIPTION
7.1 OVERVIEW
The INA101/2 is a monolithic instrumentation amplifier based on a modification of the classic three op amp
approach. Absolute value trimming allows the user to program gain accurately with only one resistor.
Monolithic construction and trimming allow the tight matching and tracking of circuit components, thus
ensuring the high level of performance inherent in this circuit.
The internal gain resistors, R1 and R2, are trimmed to an absolute value of 24.7kΩ, allowing the gain to be
programmed accurately with a single external resistor.
The gain equation is then:
G=
49.4kΩ
+1
RG
(1)
49.4kΩ
(2)
G –1
As a single-ended output referred to the REF pin, connect the REF pin to ground or a low resistance source.
RG =
7.2 FUNCTIONAL BLOCK DIAGRAM
+VS
–
RG
+
–IN
40k
24.7k
40k
–
R
+
OUTPUT
24.7k
–
RG
+IN
+
REF
40k
40k
–VS
Figure 39. Functional Block Diagram
Page 16 of 25 | www.analogysemi.com
Public
© 2023 AnalogySemi Ltd. All Rights Reserved.
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
7.3 FEATURE DESCRIPTION
7.3.1 PRECISION V-I CONVERTER
The INA101/2, along with another op amp and two resistors, makes a precision current source (Figure 40).
The op amp buffers the reference terminal to maintain good CMR. The output voltage, VX, of the INA101/2
appears across R1, which converts it to a current. This current, less only the input bias current of the op amp,
then flows out to the load.
+VS
VIN+
3
+
7
8
+Vx
RG
Device
R1
5
1
VIN
6
4
2
IL
VS
IL = VX/R1 = (VIN+
+
VIN–) × G/R1
LOAD
Figure 40. Precision Voltage-to-Current Converter
7.3.2 GAIN SELECTION
The INA101/2 gain is resistor-programmed by RG, or more precisely, by whatever impedance appears
between pins 1 and 8. The INA101/2 is designed to offer accurate gains using 0.1% to 1% resistors. Table 9
shows required values of RG for various gains. Note that for G = 1, the RG pins are unconnected (RG = ∞). For
any arbitrary gain, RG can be calculated by using the formula:
49.4kΩ
(3)
G –1
To minimize gain error, avoid high parasitic resistance in series with RG; to minimize gain drift, RG should have
a low TC—less than 10ppm/°C for the best performance.
RG =
Table 9. Required Values of Gain Resistors
1% STD TABLE VALUE OF RG (Ω)
49.9k
12.4k
5.49k
2.61k
1.00k
499
249
100
49.9
© 2023 AnalogySemi Ltd. All Rights Reserved.
CALCULATED GAIN
1.990
4.984
9.998
19.93
50.40
100.0
199.4
0.1% STD TABLE VALUE OF RG (Ω )
49.3k
12.4k
5.49k
2.61k
1.01k
499
249
495.0
991.0
98.8
49.3
Public
CALCULATED GAIN
2.002
4.984
9.998
19.93
49.91
100.0
199.4
501.0
1,003.0
www.analogysemi.com | Page 17 of 25
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
7.3.3 INPUT AND OUTPUT OFFSET VOLTAGE
The low errors of the INA101/2 are attributed to two sources, input and output errors. The output error is divided
by G when referred to the input. In practice, the input errors dominate at high gains, and the output errors
dominate at low gains. The total VOS for a given gain is calculated as:
Total Error RTI = Input Error + (Output Error / G)
(4)
Total Error RTO = (Input Error × G) + Output Error
(5)
7.3.4 REFERENCE TERMINAL
The reference terminal potential defines the zero output voltage and is especially useful when the load does
not share a precise ground with the rest of the system. It provides a direct means of injecting a precise offset
to the output, with an allowable range of 2V within the supply voltages. Parasitic resistance should be kept
to a minimum for optimum CMR.
7.3.5 INPUT PROTECTION
For input voltages beyond the supplies, a protection resistor should be placed in series with each input to
limit the current to 10mA. These can be the same resistors as those used in the RFI filter. High values of
resistance can impact the noise and AC CMRR performance of the system. Low leakage diodes (such as
the BAV199) can be placed at the inputs to reduce the required protection resistance.
+SUPPLY
R
+IN
+
VOUT
Device
R
REF
IN
SUPPLY
Figure 41. Diode Protection for Voltages Beyond Supply
Page 18 of 25 | www.analogysemi.com
Public
© 2023 AnalogySemi Ltd. All Rights Reserved.
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
7.3.6 RF INTERFERENCE
All instrumentation amplifiers rectify small out of band signals. The disturbance may appear as a small dc
voltage offset. High frequency signals can be filtered with a low pass R-C network placed at the input of the
instrumentation amplifier. Figure 42 demonstrates such a configuration. The filter limits the input signal
according to the following relationship:
FilterFreqDIFF =
1
2πR(2CD + CC )
(6)
1
2πRCC
(7)
FilterFreqCM =
Where:
•
CD ≥ 10CC.
CD affects the difference signal. CC affects the common-mode signal. Any mismatch in R × CC degrades the
INA101/2 CMRR. To avoid inadvertently reducing CMRR-bandwidth performance, make sure that CC is at
least one magnitude smaller than CD. The effect of mismatched CCs is reduced with a larger CD:CC ratio.
+15V
0.1μF
R
CC
CD
10μF
+IN
499Ω
+
Device
VOUT
R
CC
REF
IN
0.1μF
10μF
V
Figure 42. Circuit to Attenuate RF Interference
© 2023 AnalogySemi Ltd. All Rights Reserved.
Public
www.analogysemi.com | Page 19 of 25
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
7.3.7 COMMON-MODE REJECTION
Instrumentation amplifiers, such as the INA101/2, offer high CMR, which is a measure of the change in output
voltage when both inputs are changed by equal amounts. These specifications are usually given for a fullrange input voltage change and a specified source imbalance.
For optimal CMR, the reference terminal should be tied to a low impedance point, and differences in
capacitance and resistance should be kept to a minimum between the two inputs. In many applications,
shielded cables are used to minimize noise; for best CMR over frequency, the shield should be properly
driven. Figure 43 and Figure 44 show active data guards that are configured to improve ac common-mode
rejections by “bootstrapping” the capacitances of input cable shields, thus minimizing the capacitance
mismatch between the inputs.
+VS
INPUT
2
7
100Ω
+
1
Device
RG
100Ω
VOUT
6
+
VS
5
8
REFERENCE
4
3
+INPUT
+
VS
Figure 43. Differential Shield Driver
+VS
7
INPUT
2
1
RG/2
100Ω
Device
+
VOUT
RG/2
8
+INPUT
6
5
3
4
REFERENCE
+
VS
Figure 44. Common-Mode Shield Driver
Page 20 of 25 | www.analogysemi.com
Public
© 2023 AnalogySemi Ltd. All Rights Reserved.
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
7.3.8 GROUND RETURNS FOR INPUT BIAS CURRENTS
Input bias currents are those currents necessary to bias the input transistors of an amplifier. There must be a
direct return path for these currents. Therefore, when amplifying “floating” input sources, such as transformers
or ac-coupled sources, there must be a dc path from each input to ground, as shown in Figure 45, Figure 46,
and Figure 47.
+VS
INPUT
2
1
RG
7
Device
VOUT
6
5
8
+INPUT
LOAD
4
3
REFERENCE
VS
To Power
Supply Ground
Figure 45. Ground Returns for Bias Currents with Transformer-Coupled Inputs
+VS
INPUT
2
1
RG
7
Device
VOUT
6
5
8
+INPUT
LOAD
4
3
REFERENCE
VS
To Power
Supply Ground
Figure 46. Ground Returns for Bias Currents with Thermocouple Inputs
© 2023 AnalogySemi Ltd. All Rights Reserved.
Public
www.analogysemi.com | Page 21 of 25
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
+VS
INPUT
2
7
1
Device
RG
VOUT
6
5
8
+INPUT
100kΩ
LOAD
4
3
REFERENCE
100kΩ
VS
To Power
Supply Ground
Figure 47. Ground Returns for Bias Currents with AC-Coupled Inputs
Page 22 of 25 | www.analogysemi.com
Public
© 2023 AnalogySemi Ltd. All Rights Reserved.
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
8. PACKAGE INFORMATION
E
E1
L
The INA101/2 is available in the SOIC-8 package. Figure 48 shows the package view.
PIN#1
b
e
c
A
A2
A1
D
Figure 48. Package View
Table 10 provides detailed information about the dimensions.
Table 10. Dimensions
SYMBOL
A
A1
A2
b
c
D
E
E1
e
L
θ
DIMENSIONS IN MILLIMETERS
MIN
MAX
1.350
0.100
1.350
0.330
0.170
4.700
5.800
3.800
DIMENSIONS IN INCHES
MIN
MAX
1.750
0.250
1.550
0.510
0.250
5.100
6.200
4.000
0.053
0.004
0.053
0.013
0.007
0.185
0.228
0.150
1.270
8°
0.016
0°
1.270 (BSC)
0.400
0°
© 2023 AnalogySemi Ltd. All Rights Reserved.
0.069
0.010
0.061
0.020
0.010
0.201
0.244
0.157
0.050 (BSC)
Public
0.050
8°
www.analogysemi.com | Page 23 of 25
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
9. TAPE AND REEL INFORMATION
Figure 49 illustrates the carrier tape.
+0.25
Φ1.50 0
4.00 ± 0.10
0.25± 0.03
+0.10
Φ1.50 0
R0.30 MAX
2.10 ± 0.10
6.40 ± 0.1
8.00 ± 0.10
5.4 ± 0.10
5.50 ± 0.10
1.75 ± 0.10
12.00 ± 0.30
2.00 ± 0.05
R0.50
5º MAX
Notes:
1. Cover tape width: 9.5 ± 0.10.
2. Cumulative tolerance of 10 sprocket hole pitch: ± 0.20 (max).
3. Camber: not to exceed 1mm in 100mm.
4. Mold#: SOIC-8.
5. All dimensions: mm.
6. Direction of view:
Figure 49. Carrier Tape Drawing
Table 11 provides information about tape and reel.
Table 11. Tape and Reel Information
PACKAGE
TYPE
REEL
QTY/REEL
REEL/
INNER BOX
INNER BOX/
CARTON
QTY/CARTON
INNER BOX
SIZE (MM)
CARTON
SIZE (MM)
SOIC-8
13’’
4000
1
8
32000
358*340*50
430*380*390
Figure 50 shows the product loading orientation—pin 1 is assigned at Q1.
Pin 1
Q1
Q2
Q1
Q2
Q3
Q4
Q3
Q4
* Q: Pocket quadrant
Figure 50. Product Loading Orientation
Page 24 of 25 | www.analogysemi.com
Public
© 2023 AnalogySemi Ltd. All Rights Reserved.
INA101/INA102
High-Performance, Low-Power Instrumentation Amplifier
REVISION HISTORY
REVISION
DATE
Rev A
12 January 2023
© 2023 AnalogySemi Ltd. All Rights Reserved.
DESCRIPTION
Rev A release.
Public
www.analogysemi.com | Page 25 of 25
工商网监
湘ICP备2023018690号
