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NSI8220W0-DSWVR

NSI8220W0-DSWVR

  • 厂商:

    NOVOSENSE(纳芯微)

  • 封装:

    SOW8_300MIL

  • 描述:

    数字隔离器 2Channel 5KVrms 5.85 x 7.50mm SOW8_300MIL

  • 数据手册
  • 价格&库存
NSI8220W0-DSWVR 数据手册
NSi822x High Reliability Dual-Channel Digital Isolators Datasheet (EN) 1.6 Product Overview The NSi822x devices are high reliability dual-channel digital isolators. The NSi822x device is safety certified by UL1577 support several insulation withstand voltages (3.75kVrms, 5kVrms, 8kVrms), while providing high electromagnetic immunity and low emissions at low power consumption. The data rate of the NSi822x is up to 150Mbps, and the common-mode transient immunity (CMTI) is up to 250kV/us. The NSi822x device provides digital channel direction configuration and the default output level configuration when the input power is lost. Wide supply voltage of the NSi822x device support to connect with most digital interface directly, easy to do the level shift. High system level EMC performance enhance reliability and stability of use.  CQC certification per GB4943.1-2011  CSA component notice 5A  DIN VDE V 0884-11:2017-01 Applications  Industrial automation system  Isolated SPI, RS232, RS485  General-purpose multichannel isolation  Motor control Device Information Part Number NSi822xNx-DSPR Package SOP8 Body Size 4.90mm × 3.90mm NSi822xWx-DSWVR SOW8 5.85mm × 7.50mm  Up to 5000Vrms Insulation voltage NSi822xWx-DSWR SOW16 10.30mm × 7.50mm  Date rate: DC to 150Mbps NSi822xWx-DSWWR SOWW16 10.52mm × 14.0mm  Power supply voltage: 2.5V to 5.5V Functional Block Diagrams Key Features  High CMTI: 250kV/us  Chip level ESD: HBM: ±8kV  Robust EMC Reinforced Dual-Channel Digital Isolators for SOW8 wide body and SOW16 wide body  Default output high level or low level option Figure 1. NSi822xN Block Diagram  Isolation surge voltage: >10kV  Low power consumption: 1.5mA/ch (1 Mbps)  Low propagation delay: 400 >600 >600 >600 Ⅱ Ⅰ Ⅰ Ⅰ For Rated Mains Voltage ≤ 150Vrms Ⅰto Ⅳ Ⅰto Ⅳ Ⅰto Ⅳ Ⅰto Ⅳ For Rated Mains Voltage ≤ 300Vrms Ⅰto Ⅲ Ⅰto Ⅳ Ⅰto Ⅳ Ⅰto Ⅳ For Rated Mains Voltage ≤ 600Vrms Ⅰto Ⅱ Ⅰto Ⅳ Ⅰto Ⅳ Ⅰto Ⅳ For Rated Mains Voltage ≤ 1000Vrms Ⅰ Ⅰto Ⅲ Ⅰto Ⅲ Ⅰto Ⅲ 10/105/21 10/105/21 10/105/21 10/105/21 2 2 2 2 VIORM 565 2121 2121 2121 Vpeak VIOWM 400 1500 1500 1500 VRMS 565 2121 2121 2121 VDC 847 / / / Vpeak / 3977 3977 3977 678 / / / Material Group CTI 28 IEC 60112 V Installation Classification per DIN VDE 0110 Climatic Classification Pollution Degree per DIN VDE 0110, Table 1 Maximum repetitive isolation voltage Maximum Working Isolation Voltage AC voltage DC voltage Input to Output Test Voltage, Method B1 VIORM × 1.5 = Vpd(m), V pd (m) 100% production test, tini = tm = 1 sec, qpd < 5 pC VIORM × 1.875 = Vpd(m), 100% production test, tini = tm = 1 sec, qpd < 5 pC Input to Output Test Voltage, Method A After Environmental Tests Subgroup 1 VIORM × 1.3=Vpd (m), tini = 60 sec, tm=10 sec, qpd < 5 pC Copyright © 2022, NOVOSENSE V pd (m) Page 18 Vpeak NSi8220/NSi8221/NSi8222 Description Test Condition Datasheet (EN) 1.6 Symbol VIORM × 1.6=Vpd (m), tini = 60 sec, tm=10 sec, qpd < 5 pC After Input and /or Safety Test Subgroup 2 and Subgroup 3 Unit / 3394 3394 3394 V pd (m) 678 2545 2545 2545 Vpeak t = 60 sec VIOTM 5300 8000 8000 12000 Vpeak Test method per IEC60065,1.2/50us waveform, VTEST=VIOSM×1.3 VIOSM 5384 V IORM × 1.2= V pd (m) , t ini = 60 sec, t m = 10 sec, partial discharge < 5 pC Maximum transient isolation voltage Maximum Surge Isolation Voltage Value Test method per IEC60065,1.2/50us waveform, VTEST=VIOSM×1.6 Vpeak 6250 6250 6250 Vpeak >109 >109 >109 >109 Ω >1011 >1011 >1011 >1011 Ω CIO 0.6 0.6 0.6 0.6 pF Input capacitance CI 2 2 2 2 pF Case Temperature Ts 150 150 150 150 ℃ VISO 3750 5000 5000 8000 VRMS Isolation resistance VIO =500V at Tamb=TS RIO VIO =500V at 100℃≤Tamb≤125℃ Isolation capacitance f = 1MHz Insulation Specification per UL1577 Withstand Isolation Voltage VTEST = 1.2 × VISO, t = 1 sec, 100% production test 1) This coupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. 6.2. Safety-Limiting Values Basic isolation safety-limiting values as outlined in VDE-0884-11 of NSi822xN-DSPR SOP8(150mil) Description Test Condition Value Unit Safety Supply Power RθJA = 137.7 ℃/W, T J = 150 ℃, T A = 25 ℃ 908 mW Safety Supply Current RθJA = 137.7 ℃/W, V I = 5.5 V, T J = 150 ℃, T A = 25 ℃ 165 mA 150 °C Safety Temperature2) 1) Calculate with the junction-to-air thermal resistance, RθJA, of SOP8(150mil) package (Thermal Information Table) which is that of a device installed on a low effective thermal conductivity test board (1s) according to JESD51-3. 2) The maximum safety temperature has the same value as the maximum junction temperature (TJ) specified for the device. Copyright © 2022, NOVOSENSE Page 19 Safety Limiting Power (mW) NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 1000 900 800 700 600 500 400 300 200 100 0 0 50 100 150 200 Ambient Temperature (°C) Figure 6.1 NSi822xN-DSPR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 Reinforced isolation safety-limiting values as outlined in VDE-0884-11 of NSi822xW-DSWVR SOW8(300mil) Description Test Condition Value Unit Safety Supply Power RθJA = 84.3 ℃/W, V I = 5.5 V, T J = 150 ℃, T A = 25 ℃ 1483 mW Safety Supply Current RθJA = 84.3 ℃/W, T J = 150 ℃, T A = 25 ℃ 269.6 mA 150 °C Safety Temperature2) Calculate with the junction-to-air thermal resistance, RθJA, of SOW8(300mil) package (Thermal Information Table) which is that of a device installed on a low effective thermal conductivity test board (1s) according to JESD51-3. 2) The maximum safety temperature has the same value as the maximum junction temperature (TJ) specified for the device. Safety Limiting Power (mW) 1) 1600 1400 1200 1000 800 600 400 200 0 0 50 100 150 200 Ambient Temperature (°C) Figure 6.2 NSi822xW-DSWVR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 Reinforced isolation safety-limiting values as outlined in VDE-0884-11 of NSi822xW-DSWR SOW16(300mil) Copyright © 2022, NOVOSENSE Page 20 NSi8220/NSi8221/NSi8222 Description Datasheet (EN) 1.6 Test Condition Value Unit Safety Supply Power RθJA = 86.5 ℃/W, V I = 5.5 V, T J = 150 ℃, T A = 25 ℃ 1445 mW Safety Supply Current RθJA = 86.5 ℃/W, T J = 150 ℃, T A = 25 ℃ 262.7 mA 150 °C Safety Temperature2) Calculate with the junction-to-air thermal resistance, RθJA, of SOW16(300mil) package (Thermal Information Table) which is that of a device installed on a low effective thermal conductivity test board (1s) according to JESD51-3. 2) The maximum safety temperature has the same value as the maximum junction temperature (TJ) specified for the device. Safety Limiting Power (mW) 1) 1600 1400 1200 1000 800 600 400 200 0 0 50 100 150 200 Ambient Temperature (°C) Figure 6.3 NSi822xW-DSWR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 Reinforced isolation safety-limiting values as outlined in VDE-0884-11 of NSi822xW-DSWWR SOWW16(600mil) Description Test Condition Value Unit Safety Supply Power RθJA = 86.5 ℃/W, V I = 5.5 V, T J = 150 ℃, T A = 25 ℃ 1445 mW Safety Supply Current RθJA = 86.5 ℃/W, T J = 150 ℃, T A = 25 ℃ 262.7 mA 150 °C Safety Temperature2) Calculate with the junction-to-air thermal resistance, RθJA, of SOWW16(600mil) package (Thermal Information Table) which is that of a device installed on a low effective thermal conductivity test board (1s) according to JESD51-3. 2) The maximum safety temperature has the same value as the maximum junction temperature (TJ) specified for the device. Safety Limiting Power (mW) 1) 1600 1400 1200 1000 800 600 400 200 0 0 50 100 150 200 Ambient Temperature (°C) Figure 6.4 NSi822xW-DSWWR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-1 Copyright © 2022, NOVOSENSE Page 21 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 6.3. Regulatory Information The NSi822xN- DSPR are approved by the organizations listed in table. CUL UL 1577 Component Recognition Program VDE Approved under CSA Component Acceptance Notice 5A DIN VDE V 088411:2017-01 CQC Certified by CQC11471543-2012 GB4943.1-2011 Single Protection, 3750Vrms Isolation voltage Single Protection, 3750Vrms Isolation voltage Basic Insulation 565Vpeak, VIOSM=5384Vpeak Basic insulation File (E500602) File (E500602) File (40050121) File (CQC20001264940) VDE CQC The NSi822xW-DSWVR are approved by the organizations listed in table. CUL UL 1577 Component Recognition Program Single Protection, 5000Vrms Isolation voltage File (E500602) Approved under CSA Component Acceptance Notice 5A DIN VDE V 088411(VDE V 088411):2017-01 Certified by CQC11471543-2012 Single Protection, 5000Vrms Isolation voltage Reinforced Insulation 2121Vpeak, VIOSM=6250Vpeak File (E500602) File (40052820) File (CQC20001264938) VDE CQC GB4943.1-2011 Reinforced insulation The NSi822xW-DSWR are approved by the organizations listed in table. CUL UL 1577 Component Recognition Program Single Protection, 5000Vrms Isolation voltage File (E500602) Copyright © 2022, NOVOSENSE Approved under CSA Component Acceptance Notice 5A DIN VDE V 088411(VDE V 088411):2017-01 Single Protection, 5000Vrms Isolation voltage Reinforced Insulation 2121Vpeak, VIOSM=6250Vpeak File (E500602) File (40052820) Certified by CQC11471543-2012 GB4943.1-2011 Reinforced insulation File (CQC20001264939) Page 22 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 The NSi822xW-DSWWR are approved by the organizations listed in table. CUL UL 1577 Component Recognition Program Single Protection, 8000Vrms Isolation voltage File (pending) Copyright © 2022, NOVOSENSE VDE Approved under CSA Component Acceptance Notice 5A DIN VDE V 088411(VDE V 088411):2017-01 Single Protection, 8000Vrms Isolation voltage Reinforced Insulation 2121Vpeak, VIOSM=6250Vpeak File (pending) File (pending) CQC Certified by CQC11471543-2012 GB4943.1-2011 Reinforced insulation File (pending) Page 23 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 7. Function Description 7.1. Overview The NSi822x is a Dual-channel digital isolator based on a capacitive isolation barrier technique. The digital signal is modulated with RF carrier generated by the internal oscillator at the Transmitter side. Then it is transferred through the capacitive isolation barrier and demodulated at the Receiver side. The NSi822x devices are high reliability dual-channel digital isolator. The NSi822x device is safety certified by UL1577 support several insulation withstand voltages (3.75kVrms, 5kVrms), while providing high electromagnetic immunity and low emissions at low power consumption. The data rate of the NSi822x is up to 150Mbps, and the common-mode transient immunity (CMTI) is up to 250kV/us. The NSi822x device provides digital channel direction configuration and the default output level configuration when the input power is lost. Wide supply voltage of the NSi822x device support to connect with most digital interface directly, easy to do the level shift. High system level EMC performance enhance reliability and stability of use. The NSi822x has a default output status when VDDIN is unready and VDDOUT is ready as shown in Table 7.1, which helps for diagnosis when power is missing at the transmitter side. The output B follows the same status with the input A within 60us after powering up. Table 7.1 Output status vs. power status Input VDD1 status VDD2 status Output H1 Ready Ready H L2 Ready Ready L X3 Unready Ready L(NSi822xx0) H(NSi822xx1 ) X Ready Unready X Comment Normal operation. The output follows the same status with the input within 60us after input side VDD1 is powered on. The output follows the same status with the input within 60us after output side VDD2 is powered on. Note: H=Logic high; L=Logic low; X=Logic low or logic high VDD1 is input side power; VDD2 is out side power. Copyright © 2022, NOVOSENSE Page 24 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 7.2. OOK Modulation NSi822x is based on a capacitive isolation barrier technique and the digital signal is modulated with RF carrier generated by the internal oscillator at the transmitter side, as shown in Figure 7.1, then it is transferred through the capacitive isolation barrier and demodulated at the receiver side. The modulation uses OOK modulation technique with key benefits of high noise immunity and low radiation EMI. Figure 7.1 Single Channel Function Block Diagram Figure 7.2 OOK Modulation Copyright © 2022, NOVOSENSE Page 25 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 8. Application Note 8.1. Typical Application Circuit Figure 8.1 Typical SCH for ISO CAN Interface 8.2. PCB Layout The NSi822x requires a 0.1 µF bypass capacitor between VDD1 and GND1, VDD2 and GND2. The capacitor should be placed as close as possible to the package. Figure 8.2 to Figure 8.5 show the recommended PCB layout, make sure the space under the chip should keep free from planes, traces, pads and via. To enhance the robustness of a design, the user may also include resistors (50–300 Ω ) in series with the inputs and outputs if the system is excessively noisy. The series resistors also improve the system reliability such as latch-up immunity. The typical output impedance of an isolator driver channel is approximately 50 Ω, ±40%. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces. Figure8.2 Recommended PCB Layout — Top Layer Figure8.3 Recommended PCB Layout — Bottom Layer Figure8.4 Recommended PCB Layout — Top Layer Figure8.5 Recommended PCB Layout — Bottom Layer Copyright © 2022, NOVOSENSE Page 26 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 8.3. High Speed Performance Figure 8.6 shows the eye diagram of NSi822x at 200Mbps data rate output. The result shows a typical measurement on the NSi822x with 350ps p-p jitter. Figure8.6 NSi822x Eye Diagram 8.4. Typical Supply Current Equations The typical supply current of NSi822x can be calculated using below equations. IDD1 and IDD2 are typical supply currents measured in mA, f is data rate measured in Mbps, CL is the capacitive load measured in pF NSi8220: IDD1 = 0.19 *a1+1.45*b1+0.82*c1. IDD2 = 1.36+ VDD1*f* CL *c1*10-9 When a1 is the channel number of low input at side 1, b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1. NSi8221/ NSi8222: IDD1 = 0.87 +1.26*b1+0.63*c1+ VDD1*f* CL *c2*10-9 IDD2 = 0.87 +1.26*b2+0.63*c2+ VDD1*f* CL *c1*10-9 When b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1, b2 is the channel number of high input at side 2, c2 is the channel number of switch signal input at side 2. Copyright © 2022, NOVOSENSE Page 27 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 9. Package Information Figure 9.1 SOP8 Package Shape and Dimension in millimeters Copyright © 2022, NOVOSENSE Page 28 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 Figure 9.2 SOP8 Package Board Layout Example Figure 9.3 SOW8 Package Shape and Dimension in millimeters Copyright © 2022, NOVOSENSE Page 29 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 Figure 9.4 SOW8 Package Board Layout Example Figure 9.5 SOP16(300mil)/SOW16 Package Shape and Dimension in millimeters Copyright © 2022, NOVOSENSE Page 30 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 Figure 9.6 SOP16(300mil)/SOW16 Package Board Layout Example Copyright © 2022, NOVOSENSE Page 31 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 Figure 9.7 SOP16(600mil)/SOWW16 Package Shape and Dimension in millimeters Figure 9.8 SOP16(600mil)/SOWW16 Package Board Layout Example Copyright © 2022, NOVOSENSE Page 32 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 10. Order Information Part Number Isolation Rating (kV) Numbe r of side 2 inputs 0 Max Data Rate (Mbps) Default Output State Temperature MSL Package Type Package Drawing SPQ 3.75 Numbe r of side 1 inputs 2 NSi8220N0DSPR NSi8220N1DSPR NSi8221N0DSPR NSi8221N1DSPR NSi8222N0DSPR NSi8222N1DSPR NSi8220W0DSWR NSi8220W1DSWR NSi8221W0DSWR NSi8221W1DSWR NSi8222W0DSWR NSi8222W1DSWR NSi8220W0DSWVR NSi8220W1DSWVR NSi8221W0DSWVR NSi8221W1DSWVR NSi8222W0DSWVR NSi8222W1DSWVR NSi8220W0DSWWR NSi8220W1DSWWR NSi8221W0- 150 Low -55 to 125℃ 1 SOP8 2500 3.75 2 0 150 High -55 to 125℃ 1 SOP8 2500 3.75 1 1 150 Low -55 to 125℃ 1 SOP8 2500 3.75 1 1 150 High -55 to 125℃ 1 SOP8 2500 3.75 1 1 150 Low -55 to 125℃ 1 SOP8 2500 3.75 1 1 150 High -55 to 125℃ 1 SOP8 2500 5 2 0 150 Low -55 to 125℃ 2 SOW16 1000 5 2 0 150 High -55 to 125℃ 2 SOW16 1000 5 1 1 150 Low -55 to 125℃ 2 SOW16 1000 5 1 1 150 High -55 to 125℃ 2 SOW16 1000 5 1 1 150 Low -55 to 125℃ 2 SOW16 1000 5 1 1 150 High -55 to 125℃ 2 SOW16 1000 5 2 0 150 Low -55 to 125℃ 3 SOW8 1000 5 2 0 150 High -55 to 125℃ 3 SOW8 1000 5 1 1 150 Low -55 to 125℃ 3 SOW8 1000 5 1 1 150 High -55 to 125℃ 3 SOW8 1000 5 1 1 150 Low -55 to 125℃ 3 SOW8 1000 5 1 1 150 High -55 to 125℃ 3 SOW8 1000 8 2 0 150 Low -55 to 125℃ 3 SOWW16 1000 8 2 0 150 High -55 to 125℃ 3 SOWW16 1000 8 1 1 150 Low -55 to 125℃ 3 SOP8 (150mil) SOP8 (150mil) SOP8 (150mil) SOP8 (150mil) SOP8 (150mil) SOP8 (150mil) SOW16 (300mil) SOW16 (300mil) SOW16 (300mil) SOW16 (300mil) SOW16 (300mil) SOW16 (300mil) SOW8 (300mil) SOW8 (300mil) SOW8 (300mil) SOW8 (300mil) SOW8 (300mil) SOW8 (300mil) SOW16 (600mil) SOW16 (600mil) SOW16 SOWW16 1000 Copyright © 2022, NOVOSENSE Page 33 NSi8220/NSi8221/NSi8222 Part Number Isolation Rating (kV) Numbe r of side 1 inputs Numbe r of side 2 inputs Datasheet (EN) 1.6 Max Data Rate (Mbps) Default Output State Temperature MSL DSWWR NSi8221W18 1 1 150 High 3 -55 to 125℃ DSWWR NSi8222W08 1 1 150 Low 3 -55 to 125℃ DSWWR NSi8222W18 1 1 150 High 3 -55 to 125℃ DSWWR NOTE: All packages are RoHS-compliant with peak reflow temperatures of 260 ℃ according classifications and peak solder temperatures. Package Type Package Drawing SPQ (600mil) SOW16 SOWW16 1000 (600mil) SOW16 SOWW16 1000 (600mil) SOW16 SOWW16 1000 (600mil) to the JEDEC industry standard Part Number Rule: 11. Documentation Support Part Number NSi822x Product Folder tbd Copyright © 2022, NOVOSENSE Datasheet tbd Technical Documents tbd Isolator selection guide tbd Page 34 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 12. Tape and Reel Information Figure 12.1 Reel Information (for all packages) Copyright © 2022, NOVOSENSE Page 35 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 Direction of Feed 1 2 3 4 Quadrant Designations Figure 12.2 Tape Information of SOP8 Copyright © 2022, NOVOSENSE Page 36 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 Direction of Feed 1 2 3 4 Quadrant Designations Figure 12.2 Tape Information of SOW8 Copyright © 2022, NOVOSENSE Page 37 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 Direction of Feed 1 2 3 4 Quadrant Designations Figure 12.3 Tape Information of SOW16 Copyright © 2022, NOVOSENSE Page 38 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 Direction of Feed 1 2 3 4 Quadrant Designations Figure 12.4 Tape Information of SOWW16 Copyright © 2022, NOVOSENSE Page 39 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 13. Revision History Revision 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Description Initial version Update SOW8 package PIN description Changed tape and reel information Operating temperature support -55 to 125 ℃ Update SOWW16 package Update Package Board Layout Example. Changed AEC-Q100 description. Update SOWW16 MSL, Pin Configuration and VISO. Copyright © 2022, NOVOSENSE Date 2019/12/20 2020/6/23 2021/2/4 2021/7/7 2021/12/5 2022/4/16 2022/9/30 Page 40 NSi8220/NSi8221/NSi8222 Datasheet (EN) 1.6 IMPORTANT NOTICE The information given in this document shall in no event be regarded as any warranty or authorization of, express or implied, including but not limited to accuracy, completeness, merchantability, fitness for a particular purpose or infringement of any third party’s intellectual property rights. You are solely responsible for your use of Novosense’ products and applications, and for the safety thereof. You shall comply with all laws, regulations and requirements related to Novosense’s products and applications, although information or support related to any application may still be provided by Novosense. The resources are intended only for skilled developers designing with Novosense’ products. Novosense reserves the rights to make corrections, modifications, enhancements, improvements or other changes to the products and services provided. Novosense authorizes you to use these resources exclusively for the development of relevant applications designed to integrate Novosense’s products. Using these resources for any other purpose, or any unauthorized reproduction or display of these resources is strictly prohibited. Novosense shall not be liable for any claims, damages, costs, losses or liabilities arising out of the use of these resources. For further information on applications, products and technologies, please contact Novosense (www.novosns.com ). Suzhou Novosense Microelectronics Co., Ltd Copyright © 2022, NOVOSENSE Page 41
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