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MCR100-8

MCR100-8

  • 厂商:

    KY(韩景元)

  • 封装:

    TO92-3

  • 描述:

    可控硅/晶闸管/光电可控硅 Vrrm=800V It=700mA Pgm=500mW TO92-3

  • 数据手册
  • 价格&库存
MCR100-8 数据手册
Mcr100 Series 0.8A SCRs Sensitive Gate SCRs ShenZhenHanKingyuan Electronic CO.,Ltd ShenZhenHanKingyuan Electronic CO.,Ltd SCRs Mcr100 Series Sensitive Gate SCR 01. 1 2 3 1 3 2 SOT-89 TO-92 2 1 1 2 3 3 SOT-89-2L SOT-223 2 2 1 1 3 3 SOT-23-3L SOT-23 FEATURES IT(RMS):0.8A VGT: 0.8V VDRM VRRM:600Vand800V APPLICATIONS Washing machine,vacuums, massager,solid state relay,AC Motor speed regulation and so on. www.scr-ky.com PAGE.01/06 SCRs Mcr100 Series Sensitive Gate SCR ShenZhenHanKingyuan Electronic CO.,Ltd Absolute Maximum Ratings 02. (Tj=25°C unless otherwise specifed) Symbol Parameter Conditions Ratings Unit VDRM VRRM Repetitive Peak Off-State Voltage MCR100-6 MCR100-8 600/800 V IT(AV) Average On-State Current 0.7 A IT(RMS) R.M.S On-State Current 0.8 A ITSM Surge On-State Current F=50Hz Tp=10ms 11 A I²t I²t for fusing Tp=10ms 0.45 A²s PG(AV) Average Gate Power Dissipation Tj=125°C 0.1 W PGM Peak Gate Power Dissipation tp=20us Tj=125°C 0.5 W Tj Operating Junction Temperature ~40~125 °C TSTG Storage Temperature ~40~150 °C Electrical Characteristics (Tj=25°C unless otherwise specifed) Symbol Parameter Test Conditions Value Unit IDRM Repetitive Peak Off-State Current Tc=25°C ≤5 uA Tc=110°C ≤100 uA IRRM Repetitive Peak Reverse Current Tc=25°C ≤5 uA Tc=110°C ≤100 uA VTM Forward "on" voltage IT=1.2A tp=380us ≤1.7 V VGD Gate non-trigger voltage VD=VDRM, Tj=110°C,RGK=1kΩ,RL=3.3KΩ ≥0.1 V VGT Gate trigger voltage VD=12V ,IT=0.1A ≤0.8 V IH Holding current IT=50mA ≤4 mA IL Latching current IG=1.2 IGT ≤6 mA IGT Gate trigger current VD=12V ,IT=0.1A ≤200 uA dv/dt Critical-rate of rise of commutation voltage TJ=110°C ,VD=2/3VDRM ,RGK=1K Ω ≥10 V/us THERMAL RESISTANCES Symbol Rth(j-c) Parameter junction to case www.scr-ky.com Value TO- 92/ SOT - 23/ SOT-23-3L 75 SOT-89 SOT-89-2L 45 SOT-223 31 Unit ℃/W PAGE.02/06 SCRs Mcr100 Series Sensitive Gate SCR ShenZhenHanKingyuan Electronic CO.,Ltd FIG1 03. FIG2 RMS on-state current versus case temperature Maximum power dissipation versus RMS on-state current 1.2 IT(RMS) 1.2 1.0 1.0 0.8 0.8 0.6 0.6 P(w) α=180° SOT-223 SOT-89/SOT-89-2L TO-92/ SOT-23 0.4 0.4 0.2 0.2 0 0 IT(RMS) (A) 0.4 0.6 0.2 0.8 1.0 SOT-23-3L Tc (℃) 0 0 FIG3 25 50 75 100 125 4 5 FIG4 On-state characteristics (maximum values) Surge peak on-state current versus number of cycles ITM (A) ITSM (A) 8 tp=10ms One cycle 8 Tj=Tjmax 6 1 4 2 Tj=25℃ 0 1 10 Number of cycles 100 1000 0.1 0 FIG5 1 2 VTM (V) 3 FIG6 FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp
MCR100-8 价格&库存

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MCR100-8
  •  国内价格
  • 5+0.15345
  • 50+0.13950
  • 500+0.12090
  • 1000+0.10695
  • 2500+0.10044

库存:993