GT023N10T

GT023N10T N-Channel Enhancement Mode Power MOSFET Description The GT023N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) 100% Avalanche Tested < 100V 226A 2.7mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-220 Ordering Information Device Package Marking Packaging GT023N10T TO-220 GT023N10 50pcs/Tube Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 100 V ID 226 A IDM 904 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 250 W EAS 600 mJ TJ, Tstg -55 To 175 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 62 ºC/W Maximum Junction-to-Case RthJC 0.5 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1869-V1.1) GT023N10T Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 100 -- -- V IDSS VDS = 100V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 3.0 4.0 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 80A -- 2.3 2.7 mΩ Forward Transconductance gFS VGS = 5V, ID = 80A -- 125 -- S -- 8139 -- -- 2544 -- -- 29 -- -- 121 -- -- 36 -- -- 26 -- -- 24 -- -- 30 -- -- 94 -- -- 74 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 50V, f = 0.3MHz VDD = 50V, ID = 80A, VGS = 10V VDD = 50V, ID = 80A, RG = 5Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 226 A Body Diode Voltage VSD TJ = 25ºC, ISD = 80A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 297 -- nC Reverse Recovery Time Trr IF = 80A, VGS = 0V di/dt=100A/us -- 94 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1869-V1.1) GT023N10T Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1869-V1.1) GT023N10T Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 120 120 10V VDS = 5V 5V 80 4.8V 60 4.5V 40 20 0 0 1 2 3 RDS(on),On-Resistance（mΩ） 80 60 25℃ 40 0 4 0 2 4 6 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 3. Drain Source On Resistance Figure 4. Gate Charge 5 4.5 4 3.5 3 2.5 VGS = 10V 2 1.5 1 0.5 0 100 20 VGS = 4V Vgs Gate-Source Voltage（V） ID, Drain Current (A) 100 ID, Drain Current (A) 5.3V 0 40 80 120 10 ID-Drain Current（A） VDD = 50V, ID = 80A 8 6 4 2 0 160 8 0 30 60 90 120 150 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Is, Reverse Drain Current (A) 12000 Capacitance(pF) 10000 Ciss 8000 6000 Coss 4000 2000 0 Crss 0 20 40 60 80 25℃ 100 VDS Drain-Source Voltage(V) www.gofordsemi.com 175℃ TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1869-V1.1) GT023N10T Typical Characteristics TJ = 25ºC, unless otherwise noted RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance ID, Drain Current(A) VGS = 10V, ID = 80A Figure 8. Safe Operation Area TJ, Junction Temperature (ºC) TJ(MAX)=175℃ TC=25℃ VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1869-V1.1) GT023N10T TO-220 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1869-V1.1)