GT060N04T

GT060N04T N-Channel Enhancement Mode Power MOSFET Description The GT060N04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 100% Avalanche Tested < < 40V 60A 6mΩ 8.5mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-220 Ordering Information Device Package Marking Packaging GT060N04T TO-220 GT060N04 50psc/Tube Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 40 V ID 60 A IDM 240 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 48 W EAS 56 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 62 ºC/W Maximum Junction-to-Case RthJC 2.6 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1613) GT060N04T Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 40 -- -- V IDSS VDS = 40V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.5 2.3 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 30A -- 5 6 VGS = 4.5V, ID = 20A -- 6.5 8.5 Forward Transconductance gFS VGS = 5V, ID = 30A -- 54 -- -- 1301 -- -- 644 -- -- 36 -- -- 19 -- -- 4.5 -- -- 2.3 -- -- 6 -- -- 2.5 -- -- 23 -- -- 4 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 20V, f = 1.0MHz VDD = 20V, ID = 30A, VGS = 10V VDD = 20V, ID = 30A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 60 A Body Diode Voltage VSD TJ = 25ºC, ISD = 30A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 31 -- nC Reverse Recovery Time Trr IF = 30A, VGS = 0V di/dt=500A/us -- 15.5 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=40V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1613) GT060N04T Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1613) GT060N04T Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics ID, Drain Current (A) 100 120 5V 4.5V 10V 6V VDS= 5V ID, Drain Current (A) 120 Figure 2. Transfer Characteristics 4V 80 60 40 VGS= 3V 20 0 100 80 60 40 25℃ 20 0 1 2 3 0 4 0 VDS, Drain-to-Source Voltage (V) Vgs Gate-Source Voltage（V） RDS(on),On-Resistance（mΩ） 10 VGS= 4.5V 6 VGS= 10V 2 0 0 10 20 30 40 50 6 8 Figure 4. Gate Charge 12 4 4 VGS, Gate-to-Source Voltage (V) Figure 3. Drain Source On Resistance 8 2 10 8 6 4 2 0 60 ID-Drain Current（A） VDD = 20V ID = 30A 0 5 10 15 20 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Is, Reverse Drain Current (A) Capacitance(pF) 2500 2000 Coss 1500 Ciss 1000 500 Crss 0 0 10 20 30 40 VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1613) GT060N04T Typical Characteristics TJ = 25ºC, unless otherwise noted VGS = 10V ID = 30A VGS = 4.5V ID = 20A Figure 8. Safe Operation Area ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 2.6°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1613) GT060N04T TO-220 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1613)