GCMS040B120S1-E1
VDS
RDS,on
ID (TC=25C)
TJ,max
1200V SiC COPACK Power Module
Features
1200 V
37 mΩ
57 A
175°C
Package
• High speed switching SiC MOSFETs
• Freewheeling SiC SBD with
zero reverse recovery
• Simple to drive
• Kelvin reference for stable operation
Benefits
(1) SG (Driver Source)
• Low switching losses
• Low junction to case thermal resistance
• Very rugged and easy mount
• Direct mounting to heatsink (isolated
package)
• Lower QRR at high temperature
(2) G (Gate)
(3) D (Drain)
(4) S (Source)
Applications
Part #
Package
Marking
GCMS040B120S1-E1
SOT-227
GCMS040B120S1-E1
• Photovoltaic Inverter
• Battery charger
• Server power supplies
• Energy storage system
Absolute Maximum Ratings
Characteristics
Drain-Source Voltage
Continuous Drain Current
Schottky Diode DC Current
Pulsed Drain Current
Gate Source Voltage
Power Dissipation - MOSFET
Operating & Storage Temperature
Symbol
Vrated
IDS
Conditions
VGS=0V, ID=30μA
TC=25°C, VGS=20V
Values
Unit
1200
V
57
TC=100°C, VGS=20V
42
ISD*
TC=25°C, VGS=20V
63
IF
TC=25°C, VGS=-5V
47
IDS,pulse**
VGSmax
TC=25°C, VGS=20V
VGSop
Ptot
TJ, Tstorage
160
-10/25
Recommended operational
TC=25°C
Continuous
A
-5/20
V
242
W
-55...175
°C
*ISD maximum continous current for parallel SBD and MOSFET body diode assuming maximum Rth JC of SBD
**Pulse width is limited by TJmax
Rev. 1.0, 8/19/2022
www.SemiQ.com
p.1
GCMS040B120S1-E1
1200V SiC COPACK Power Module
Static Electrical Characteristics, at TJ=25°C, unless otherwise specified
Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Gate Threshold Voltage
Drain-Source On-Resistance
Transconductance
Internal Gate Resistance
Symbol
BVDSS
Conditions
VGS=0V, ID=1mA
Values
min.
typ.
max.
Unit
1200
-
-
VDS=1200V, VGS=0V
-
1
30
VDS=1200V, VGS=0V, TJ=175°C
-
46
450
IGSS+
VGS=20V, VDS=0V
-
-10
-100
VGS=VDS, ID=10mA
2
2.4
4
VGS=VDS, ID=10mA, TJ=175°C
-
1.6
-
VGS=20V, ID=40A
-
37
52
VGS=20V, ID=20A
-
35
45
VGS=20V, ID=40A, TJ=125°C
-
56
-
VGS=20V, ID=40A, TJ=175oC
VDS=20V, ID=40A
-
73
-
-
16
-
S
f=1MHz, VAC=25mV, D-S Short
-
1.8
-
Ω
IDSS
VGS(th)
RDSon
gfs
RG(int)
V
µA
nA
V
mΩ
AC Electrical Characteristics, at TJ=25°C, unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Coss Stored Energy
Symbol
CISS
COSS**
CRSS
EOSS***
Turn-On Switching Energy
EON
Turn-Off Switching Energy
EOFF
Turn-On Delay Time
tD(on)
tR
Rise Time
Turn-Off Delay Time
Conditions
VGS=0V
VDS=1000V
f=200kHz
VAC=25mV
VDD=800V, IDS=40A,
RG(ext)=2.5Ω,
VGS=-5/+20V, L=273µH,
FWD=GCMS040A120S1-E1
Values
min.
typ.
max.
-
3110
-
-
201
-
-
10
-
-
118
-
-
415
-
-
102
-
-
15
-
-
5
-
tD(off)
-
22
-
tF
-
16
-
QG
-
124
-
Gate to Source Charge
QGS
-
50
-
Gate to Drain Charge
QGD
-
13
-
VDD=800V, IDS=40A
VGS=-5/20V
pF
µJ
µJ
Total Gate Charge
Fall Time
Unit
ns
nC
**COSS is combination of MOSFET C OSS and diode junction capacitance
***EOSS is calculated from COSS curve
Freewheeling Diode Characteristics, at TJ=25°C, unless otherwise specified
Characteristics
Diode Forward Voltage
Symbol
VSD
Reverse Recovery Time
tRR
Reverse Recovery Charge
QRR
Peak Reverse Recovery Current
IRRM
Reverse Recovery Energy
ERR
Rev. 1.0, 8/19/2022
Conditions
Values
min.
typ.
max.
VGS=-5V, IS=15A
-
1.52
1.7
VGS=-5V, IS=15A, TJ=175°C
-
2.09
-
IS=40A, VR=800V, VGS=-5V
di/dt=10.5A/ns
www.SemiQ.com
Unit
V
-
15
-
ns
-
252
-
nC
-
41
-
A
-
69
-
µJ
p.2
GCMS040B120S1-E1
1200V SiC COPACK Power Module
Thermal and Package Characteristics, at Tj=25 °C, unless otherwise specified
Characteristics
Symbol
Conditions
Values
min.
typ.
max.
Thermal resistance, junction-case
RthJC
MOSFET only
-
0.50
0.62
Thermal resistance, junction-case
RthJC
Schottky diode only
-
0.77
0.96
Unit
°C/W
Mounting torque
Md
M4-0.7 screws
1.1
-
1.5
Terminal connection torque
Mdt
M4-0.7 screws
-
1.1
1.3
Package weight
Wt
-
32
-
g
4000
-
-
V
Isolation voltage
VISOL
IISOL < 1mA,
50/60 Hz, 2 s
N-m
Typical Performance
Figure 1. Output Characteristics TJ = -55°C
Rev. 1.0, 8/19/2022
Figure 2. Output Characteristics TJ = 25°C
www.SemiQ.com
p.3
GCMS040B120S1-E1
1200V SiC COPACK Power Module
Figure 3. Output Characteristics TJ = 175°C
Figure 4. Normalized On-Resistance vs. Temperature
Figure 5. On-Resistance vs. Drain Current For Various
Temperature
Figure 6. On-Resistance vs. Temperature For Various
Gate Voltages
Rev. 1.0, 8/19/2022
www.SemiQ.com
p.4
1200V SiC COPACK Power Module
GCMS040B120S1-E1
Figure 7. Transfer Characteristic for Various Junction
Temperatures
Figure 8. Freewheeling Diode Characteristics at
TJ = -55°C
Figure 9. Freewheeling Diode Characteristics at
TJ = 25°C
Figure 10. Freewheeling Diode Characteristics at
TJ = 175°C
Rev. 1.0, 8/19/2022
www.SemiQ.com
p.5
1200V SiC COPACK Power Module
GCMS040B120S1-E1
Figure 11. IDSS vs. Temperature
Figure 12. IDSS vs. Temperature
Figure 13. Threshold Voltage vs. Temperature
Figure 14. Gate Charge Characteristics
Rev. 1.0, 8/19/2022
www.SemiQ.com
p.6
GCMS040B120S1-E1
1200V SiC COPACK Power Module
Figure 15. Output Capacitor Stored Energy
Figure 16. Capacitance vs Drain-Source Voltage
Figure 17. Continuous Drain Current Derating vs. Case
Temperature
Figure 18. Maximum Power Dissipation Derating vs
Case Temperature
Rev. 1.0, 8/19/2022
www.SemiQ.com
p.7
GCMS040B120S1-E1
1200V SiC COPACK Power Module
Figure 19. Transient Thermal impedance (Junction to
Case)
Figure 20. Safe Operating Area
Figure 21. Clamped Inductive Switching Energy vs. Drain
Current
Figure 22. Clamped Inductive Switching Energy vs.
RG(ext)
Rev. 1.0, 8/19/2022
www.SemiQ.com
p.8
1200V SiC COPACK Power Module
GCMS040B120S1-E1
Figure 23. Clamped Inductive Switching Energy vs.
Temperature
Figure 24. Switching Times vs RG(ext)
Figure 25. Switching Times vs. Drain Current
Figure 26. dv/dt and di/dt vs. Drain Current
Rev. 1.0, 8/19/2022
www.SemiQ.com
p.9
1200V SiC COPACK Power Module
GCMS040B120S1-E1
Figure 27. dv/dt and di/dt vs. RG(ext)
Figure 28. Turn-off Transient Definitions
Figure 29. Turn-on Transient Definitions
Figure 30. Reverse Recovery Definitions
Rev. 1.0, 8/19/2022
www.SemiQ.com
p.10
GCMS040B120S1-E1
1200V SiC COPACK Power Module
Package Dimensions SOT-227
Sym
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
Rev. 1.0, 8/19/2022
Millimeters
Min
Max
31.67
31.90
7.95
8.18
4.14
4.24
4.14
4.24
4.14
4.24
14.94
15.09
30.15
30.25
38.00
38.10
4.75
4.83
11.68
12.19
9.45
9.60
0.76
0.84
12.62
12.88
25.15
25.30
24.79
25.04
3.02
3.15
6.71
6.96
4.17
4.42
2.08
2.13
3.28
3.63
26.75
26.90
3.86
4.24
20.55
26.90
5.45
5.85
3.15
3.66
0.00
0.13
Inches
Max
Min
1.256
1.247
0.322
0.313
0.167
0.163
0.167
0.163
0.167
0.163
0.594
0.588
1.191
1.187
1.500
1.496
0.190
0.187
0.480
0.460
0.378
0.372
0.033
0.030
0.507
0.497
0.996
0.990
0.986
0.976
0.124
0.119
0.274
0.264
0.174
0.164
0.084
0.082
0.143
0.129
1.059
1.053
0.167
0.152
0.814
0.809
0.230
0.215
0.144
0.124
0.005
0.000
www.SemiQ.com
p.11
1200V SiC COPACK Power Module
GCMS040B120S1-E1
Revision History
Date
4/29/2022
8/19/2022
Revision
0.1
1.0
Notes
Preliminary release
Initial release
Notes
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such
substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented March, 2013. RoHS Declarations for
this product can be obtained from the Product Documentation sections of www.SemiQ.com.
REACh Compliance
REACh substances of high concern (SVHC) information is available for this product. Since the European Chemicals Agency (ECHA) has published notice of their
intent to frequently revise the SVHC listing for the foreseeable future,please contact our office at SemiQ Headquarters in Lake Forest, California to insure you
get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
SemiQ Inc., reserves the right to make changes to the product specifications and data in this document without notice. SemiQ products are sold pursuant to
SemiQ’s terms and conditions of sale in place at the time of order acknowledgement.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which
failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities,
life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic
control.
SemiQ makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SemiQ assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages. Buyer is responsible for its products and applications using SemiQ products.
To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by SemiQ.
Rev. 1.0, 8/19/2022
www.SemiQ.com
p.12