AKF30N5P0SX

AKF30N5P0SX 30V N-Channel Enhancement Mode MOSFET General Features ➢ ➢ ➢ ➢ ➢ ➢ BVDSS Low RDS(ON) Low Gate Charge Advanced High Cell Density Trench Technology RoHS Compliant Halogen-free available 100% Avalanche Tested RDS(ON) @VGS=4.5V 3.9mΩ 5.2 mΩ 30V ID Applications ➢ ➢ ➢ ➢ ➢ RDS(ON) @VGS=10V 59A PDFN3333 High Efficiency DC/DC Converters Synchronous Rectification UPS Inverter Power Management Battery Powered System Ordering Information Part Number Package Marking Remark AKF30N5P0SX PDFN3333 30N5P0SX Halogen Free Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Rating Unit VDSS Drain-to-Source Voltage[1] 30 V VGSS Gate-to-Source Voltage ±20 V TC=25°C 59 A TC=70°C 47 A ID Continuous Drain Current IDM Pulsed Drain Current at VGS=10V[2] 177 A EAS Single Pulse Avalanche Energy (VDD=25V, VGS=10V, RG=25Ω, L=1mH) 32 mJ PD Power Dissipation 28 W -55 to 150 °C TJ and TSTG Operating and Storage Temperature Range Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol Parameter Rating RθJA Thermal Resistance, Junction-to-Ambient 45 RθJC Thermal Resistance, Junction-to-Case 4.5 ARK Microelectronics Co., Ltd. www.ar k- micro.com 1/9 Unit °C /W Rev. 1.0 Jun. 2021 AKF30N5P0SX Electrical Characteristics OFF Characteristics Symbol TJ=25°C unless otherwise noted Min. Typ. Max. Unit Test Conditions Drain-to-Source Breakdown Voltage 30 -- -- V VGS=0V, ID=250µA IDSS Drain-to-Source Leakage Current -- -- 1 µA VDS=30V, VGS=0V -- -- 100 nA VGS=20V, VDS=0V IGSS Gate-to-Source Leakage Current -- -- -100 nA VGS=-20V, VDS=0V BVDSS Parameter On Characteristics TJ=25°C unless otherwise noted Symbol Parameter RDS(ON) Static Drain-to-Source On-Resistance [3] VGS(TH) Gate Threshold Voltage Min. Typ. Max. Unit Test Conditions -- 3.9 5.0 mΩ VGS=10V, ID=8A -- 5.2 7.0 mΩ VGS=4.5V, ID=5A 1.0 -- 2.0 V VDS = VGS, ID=250µA Dynamic Characteristics Symbol Parameter Essentially independent of operating temperature Min. Typ. Max. Ciss Input Capacitance -- 1527 -- Coss Output Capacitance -- 187 -- Crss Reverse Transfer Capacitance -- 151 -- Qg Total Gate Charge -- 33 -- Qgs Gate-to-Source Charge -- 7.4 -- Qgd Gate-to-Drain (Miller) Charge -- 7.1 -- Resistive Switch Characteristics Symbol Parameter Min. Typ. Max. Turn-on Delay Time -- 17 -- trise Rise Time -- 51 -- td(off) Turn-off Delay Time -- 42 -- Fall Time -- 16 -- ARK Microelectronics Co., Ltd. Test Conditions pF VGS=0V VDS=15V f=1.0MHz nC VDD=15V VGS=10V ID=6.5A Essentially independent of operating temperature td(on) tfall Unit www.ar k- micro.com 2/9 Unit Test Conditions ns VDD=15V VGS=10V RG=3.3Ω RL=2.3Ω Rev. 1.0 Jun. 2021 AKF30N5P0SX Source-Drain Diode Characteristics Symbol Parameter TJ=25℃ unless otherwise specified Min. Typ. Max. Unit Test Conditions ISD Continuous Source Current -- -- 28 A Maximum Ratings VSD Diode Forward Voltage -- -- 1.0 V IS=1.0A,VGS=0V NOTE： [1] TJ=25°C to 150°C [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] Pulse width≤380µs; duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ar k- micro.com 3/9 Rev. 1.0 Jun. 2021 AKF30N5P0SX Typical Characteristics Figure 1. On Resistance vs. Junction Temperature Figure 2. On Resistance vs. Drain Current 10 RDS(ON)，On resistance(mΩ） RDS(ON)，On resistance(Nomalized) 1.8 1.6 1.4 1.2 1 0.8 0.6 8 6 VGS=4.5V 4 VGS=10V 2 0 -50 -25 0 25 50 75 100 125 150 0 4 8 12 16 TJ，Junction Temperature(℃) ID，Drain Current(mA) Figure 3. Typical Capacitance vs. Drain-to-Source Voltage Figure 4. On Resistance vs. Gate-to-Source Voltage 25 RDS(ON)，On resistance(mΩ) 2500 C，Capacitance(pF) 2000 CISS 1500 1000 500 20 15 10 5 COSS CRSS 0 0 5 0 10 15 20 0 2 4 VDS，Drain-to-Source Voltage(V) Figure 5. Body-diode Characteristics 8 10 Figure 6. Typical Output Characteristics 100 100 VGS=10V VGS=6V ID，Drain Current(A) 80 IS，Source Current(A) 6 VGS，Gate-to-Source Voltage(V) 10 1 VGS=4.5V 60 40 VGS=3V 20 0.1 0 0.2 0.4 0.6 0.8 1 0 0 VSD，Source-to-Drain Voltage(V) ARK Microelectronics Co., Ltd. www.ar k- micro.com 4/9 1 2 3 VDS，Drain-to-Source Voltage(V) Rev. 1.0 Jun. 2021 4 AKF30N5P0SX Figure 7. Typical Gate Charge vs. Gate-to-Source Voltage 1000 10 RDS(on) Limited 6 4 100ms DC 100 8 ID，Dranin Current(mA VGS，Gate -to- Source Voltage（V） Figure 8. Maximum Forward Biased Safe Operating Area 1ms 10ms 10 10s 1s 1 2 0.1 0 0.01 Ta=25℃ 0 10 20 30 QG，Gate Charge（nC） 40 0.1 1 10 VDS，Drain-to-Source Voltage(V) 100 Figure 9. Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 10 1 50% 30% Notes： P PDM DM 10% 0.1 t1 t1 t2 t2 1.Duty Cyde.D=t1/t2 2.Per Unit Base=RθJC=4.5℃/W 3.TJM-TA=PDMZθJA 4.Surface Mounted 5% 2% 1% Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(sec) ARK Microelectronics Co., Ltd. www.ar k- micro.com 5/9 Rev. 1.0 Jun. 2021 AKF30N5P0SX Test Circuit VDS ID ID VDS VGS Miller Region D.U.T VGS VDD VGS(TH) 1mA Qgs Qgd Qg Figure 10. Gate Charge Test Circuit Figure 11. Gate Charge Waveform RL VDS VGS D.U.T RG VDD Figure 12. Resistive Switching Test Circuit VDS 90% 10% VGS td(ON) trise td(OFF) tfall Figure 13. Resistive Switching Waveforms ARK Microelectronics Co., Ltd. www.ar k- micro.com 6/9 Rev. 1.0 Jun. 2021 AKF30N5P0SX Current Pump di/dt adj. ID Double Pluse di/dt = 100A/uS VDD D.U.T L Qrr ID trr Figure 14. Diode Reverse Recovery Test Circuit Figure 15. Diode Reverse Recovery Waveform BVDSS Series Switch (MOSFET) IAS L BVDSS D.U.T VDD Commutating Diode VGS 50Ω IAS VDD 0 VGS tp EAS = ID Figure 16. Unclamped Inductive Switching Test Circuit ARK Microelectronics Co., Ltd. tAV 2 I L AS 2 Figure 17. Unclamped Inductive Switching Waveforms www.ar k- micro.com 7/9 Rev. 1.0 Jun. 2021 AKF30N5P0SX Package Dimensions PDFN3333 PDFN3333 ARK Microelectronics Co., Ltd. www.ar k- micro.com 8/9 Rev. 1.0 Jun. 2021 AKF30N5P0SX Published by ARK Microelectronics Co., Ltd. ADD: D26, UESTC National Science Park No. 1 Shuangxing Avenue, Chengdu, Sichuan. All Rights Reserved. Disclaimers ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. 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As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructions for used provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ar k- micro.com 9/9 Rev. 1.0 Jun. 2021