DMZ6012E

DMZ6012E Depletion-Mode Power MOSFET General Features ➢ ➢ ➢ ➢ ➢ ➢ ➢ ESD improved Capability Depletion Mode (Normally On) Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS Compliant Halogen-free available RDS(ON) (Max.) IDSS,min 600V 150 Ω 50mA SOT-23 Applications ➢ ➢ ➢ ➢ ➢ ➢ BVDSX D Drain Normally-on Switches SMPS Start-up Circuit Linear Amplifier Converters Constant Current Source Telecom Source G Gate S Ordering Information Part Number Package Marking Remark DMZ6012E SOT-23 612 Halogen Free Absolute Maximum Ratings Symbol TA=25℃ unless otherwise specified Parameter DMZ6012E Unit VDSX Drain-to-Source Voltage[1] 600 V VDGX Drain-to-Gate Voltage[1] 600 V ID Continuous Drain Current 0.04 IDM Pulsed Drain Current[2] 0.16 PD Power Dissipation 0.50 W VGS Gate-to-Source Voltage ±20 V TL Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 TJ and TSTG Operating and Storage Temperature Range A ℃ -55 to 150 Caution: Stresses greater than those listed in the“Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient ARK Microelectronics Co., Ltd. www.ark-micro.com 1 /6 DMZ6012E Unit 250 K/W Rev. 2.3 Jan. 2022 DMZ6012E Electrical Characteristics OFF Characteristics Symbol BVDSX ID(OFF) IGSS TA=25℃ unless otherwise specified Parameter Drain-to-Source Breakdown Voltage Min. Typ. Max. Unit Test Conditions 600 -- -- V VGS=-5V, ID=250µA -- -- 1 µA VDS=600V，VGS= -5V -- -- 100 µA VDS=600V，VGS= -5V TJ=125℃ -- -- 20 -- -- -20 Drain-to-Source Leakage Current Gate-to-Source Leakage Current ON Characteristics Symbol IDSS Saturated Drain-to-Source Current RDS(ON) Static Drain-to-Source On-Resistance VGS(OFF) Gate-to-Source Cut-off Voltage gfs Forward Transconductance Min. Typ. Max. Unit Test Conditions 50 -- -- mA VGS=0V, VDS=25V -- 110 150 Ω VGS=0V，ID=50mA [3] -3.3 -- -1.5 V VDS =3V, ID=8µA -- 77 -- mS VDS =10V, ID=5mA Dynamic Characteristics Parameter Essentially independent of operating temperature Min. Typ. Max. CISS Input Capacitance -- 62 -- COSS Oput Capacitance -- 13 -- CRSS Reverse Transfer Capacitance -- 9 -- QG Total Gate Charge -- 8 -- QGS Gate-to-Source Charge -- 0.6 -- QGD Gate-to-Drain (Miller) Charge -- 3 -- Resistive Switching Characteristics Symbol td(ON) trise td(OFF) tfall VGS=-20V, VDS=0V TA=25℃ unless otherwise specified Parameter Symbol VGS=+20V, VDS=0V µA Parameter Test Conditions pF VGS=-5V VDS=25V f=1.0MHZ nC VGS=-5V~5V VDS=300V, ID=7mA Essentially independent of operating temperature Min. Typ. Max. Turn-on Delay Time -- 10 -- Rise Time -- 22 -- Turn-off Delay Time -- 35 -- Fall Time -- 210 -- ARK Microelectronics Co., Ltd. Unit www.ark-micro.com 2 /6 Unit Test Conditions ns VGS = -5V~5V VDD = 300V, ID=7mA RG = 20 Ω Rev. 2.3 Jan. 2022 DMZ6012E Source-Drain Diode Characteristics Symbol VSD Parameter Diode Forward Voltage TA=25℃ unless otherwise specified Min Typ. Max. Units Test Conditions -- -- 1.2 V ISD =100 mA, VGS = -10 V NOTE： [1] TJ=+25℃ to +150℃ [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] Pulse width≤380µs; duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ark-micro.com 3 /6 Rev. 2.3 Jan. 2022 DMZ6012E Typical Characteristics Figure 1. Maximum Power Dissipation vs. Case Temperature Figure 2. Maximum Continuous Drain Current vs. Case Temperature 50 0.5 ID,Drain Current(mA) PD,Power Dissipation(W) 0.6 0.4 0.3 0.2 0.1 40 30 20 10 0 0 25 50 75 100 125 150 25 50 VGS=0.5V VGS=0.4V VGS=0.3V ID,Drain Current(mA) 160 VGS=0.2V VGS=0.1V VGS=0V VGS=-0.1V 140 VGS=-0.2V 120 100 80 60 40 20 0 0 10 20 30 40 150 50 35 VDS=3V 30 25 20 15 10 5 0 -2.0 60 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 VGS,Gate-to-source Voltage(V) VDS,Drain-to-Source(V) Figure 5. Typical Capacitance vs. Drainto-Source Voltage Figure 6. Typical Gate Charge vs. Gateto-Source Voltage 90 VGS,Gate-to-Source Voltage(V) 5 80 C,Capacitance(pF) 125 Figure 4. Typical Transfer Characteristics ID,Drain-to-Source Current(mA) Figure 3.Typical Output Characteristics 180 100 TC,Case Temperature(℃) TC,Case Temperature(℃) 200 75 70 60 CISS 50 40 30 20 COSS 10 0 5 10 15 20 25 30 35 40 3 2 1 0 -1 -2 -3 -4 -5 CRSS 0 4 0 45 2 4 6 8 10 QG,Gate Charge(nC) VDS,Drain Voltage(V) ARK Microelectronics Co., Ltd. www.ark-micro.com 4 /6 Rev. 2.3 Jan. 2022 DMZ6012E Package Dimensions ARK Microelectronics Co., Ltd. www.ark-micro.com 5 /6 Rev. 2.3 Jan. 2022 DMZ6012E Published by ARK Microelectronics Co., Ltd. ADD: D26,UESTC National Science Park No. 1 Shuangxing Avenue, Chengdu, Sichuan. All Rights Reserved. Disclaimers ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. 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As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructionsfor used provided in the labeling, can be reasonably expected to result in significantinjury to the user. 2. A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ark-micro.com 6 /6 Rev. 2.3 Jan. 2022