DMX1015E

DMZ1015E/DMX1015E Ultrahigh Threshold Voltage Depletion-Mode Power MOSFET General Features       ESD Improved Capability Depletion Mode (Normally On) Proprietary Advanced Planar Technology Proprietary Advanced Ultrahigh Vth Technology RoHS Compliant Halogen-free Available SOT-89 SOT-23 D Applications    D D S G G Quick Charger Current Source Voltage Source D G S S General Description This novel depletion mode MOSFET, developed and manufactured by ARK proprietary ultrahigh threshold voltage technology. By using the sub threshold characteristics, the depletion mode MOSFET can provide stably power to the load, and the voltage can be clamped to protect the load without Zener diode, and the circuit consumption is reduced. Ordering Information Part Number Package Marking Remark DMZ1015E SOT-23 1015 Halogen Free DMX1015E SOT-89 1015 Halogen Free Absolute Maximum Ratings Symbol TA=25℃ unless otherwise specified Parameter VDSX Drain-to-Source Voltage ID Continuous Drain Current Pulsed Drain Current PD Power Dissipation VGS Gate-to-Source Voltage TL TJ and TSTG DMX1015E 100 Unit V 0.1 [2] IDM VESD DMZ1015E [1] A 0.4 0.5 1.0 W ±30 V [3] 700 V Source to Gate ESD[3] 700 V Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 Gate to Source ESD Operating and Storage Temperature Range ℃ -55 to 150 Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJA Parameter DMZ1015E DMX1015E Unit 250 125 K/W Thermal Resistance, Junction-to-Ambient ARK Microelectronics Co., Ltd. www.ark-micro.com 1/8 Rev. 2.3 Dec. 2020 DMZ1015E/DMX1015E Electrical Characteristics OFF Characteristics Symbol BVDSX IGSS TA =25℃ unless otherwise specified Parameter Drain-to-Source Breakdown Voltage Min. Typ. Max. Unit Test Conditions 100 -- -- V VGS=-30V, ID=1mA -- -- 20 Gate-to-Source Leakage Current -- -- -20 ON Characteristics Symbol IDSS VGS=+30V, VDS=0V µA VGS=-30V, VDS=0V TA =25℃ unless otherwise specified Parameter Saturated Drain-to-Source Current Min. Typ. Max. Unit Test Conditions 100 -- -- mA VGS=0V, VDS=25V RDS(ON) Static Drain-to-Source On-Resistance -- -- 30 Ω VGS=0V，ID=100mA[4] VGS(OFF) Gate-to-Source Cut-off Voltage -- -- -27 V VDS=9V, ID=8µA VCL Source-to-Gate Clamp Voltage 11.5 -- -- V VDS=9V, ID=5mA Source-Drain Diode Characteristics Symbol VSD Parameter Diode Forward Voltage TA=25℃ unless otherwise specified Min Typ. Max. Units Test Conditions -- -- 1.2 V ISD=100mA, VGS=-30V NOTE： [1] TJ=+25℃ to +150℃ [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] The test is based on JEDEC EIA/JESD22-A114 (HBM). [4] Pulse width≤380µs; duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ark-micro.com 2/8 Rev. 2.3 Dec. 2020 DMZ1015E/DMX1015E Typical and highlight Characteristics DMZ1015E/ DMX1015E is an ultra-high threshold voltage depletion mode MOS device. A stable output voltage source or current source is implemented by using the sub-threshold characteristics of the device. Its basic application is shown as Figure 1: DMZ1015E/DMX1015E S Vout + Vin+ D G RL Vout - Vin- Figure1. Drain Current ID is decided by Load Resistance Figure 2. Clamp Voltage vs. Input Voltage 20 Vin=40V VCL, Clamp Voltage (V) VCL, Clamp Voltage (V) 20 Figure 3. Clamp Voltage vs. Drain Current 18 15 16 10 RL=2kΩ 14 5 12 10 0 0 20 40 60 80 Vin, Input Voltage(V) 100 1000 ID, Drain Current(uA) Figure 4. Clamp Voltage vs. Junction Temperature 16 15 VCL, Clamp Voltage (V) 10 100 ID=5mA 14 13 12 11 10 9 8 -20 0 20 40 60 80 100 TJ, Junction Tempreature(℃) ARK Microelectronics Co., Ltd. www.ark-micro.com 3/8 Rev. 2.3 Dec. 2020 DMZ1015E/DMX1015E Typical Application In the QC2.0/3.0 and Type-C/PD charger circuits, using DMZ1015E/DMX1015E as a high voltage linear regulagors can make the PWM IC power supply circuit more simplified, as shown below: In Figure 5, the transistor Q is used to provide power, and the zener diode Z is used to clamp voltage, the power supply circuit of IC is composed of several components. + DMZ6005E PD controller Synchronous rectifier IC Q VCC PWM IC Z Figure 5. Normal Circuit with Transistor and Diode In Figure 6, providing power and clamp voltage use only one device- DMZ1015E /DMX1015E, the circuit is simplified. + DMZ6005E PD controller DMZ1015E /DMX1015E Synchronous rectifier IC VCC PWM IC - Figure 6. Circuit with DMZ1015E/DMX1015E At room temperature and under 2~4mA working current (most IC’s working current), the output voltage of DMZ1015E/DMX1015E is between 12~22V. Due to strict design and process control,DMZ1015E/DMX1015E parameters have good consistency, but there are still some VGS(OFF) parameter distribution range, so we strictly control the final testing standard, the upper limit is ∣VGS(OFF)∣=27V (under normal temperature ID=8μA), the lower limit is VCL=11.5V of clamping voltage ( under room temperature ID =5mA), so as to ensure under normal working condition and the working current ARK Microelectronics Co., Ltd. www.ark-micro.com 4/8 Rev. 2.3 Dec. 2020 DMZ1015E/DMX1015E 8μA≤ID≤5mA, the clamping voltage: 11.5V≤VCL≤27V. Figure 7 shows the clamping voltage VCL lower limit of 11.5V and the threshold voltage VGS(OFF) upper limit of VGS(OFF) =-27V, and the clamping working voltage distribution when the working current does not exceed 5mA. Figure 7. Clamp Voltage vs. Drain Current Vin=40V VCL, Clamp Voltage (V) 26 22 VGS(OFF)=-27V (@ID=8μA) 18 VCL=11.5V(@ID=5mA) 14 10 10 100 1000 ID, Drain Current(μA) The clamping voltage will also change with the temperature. When the working temperature increases, the clamping voltage will increase; when the working temperature decreases, the clamping voltage will also decrease. Figure 8. Clamp Voltage vs. Junction Temperature VCL, Clamp Voltage (V) 28 ID=5mA 24 20 VGS(OFF)=-27V (@ID=8μA) 16 VCL=11.5V(@ID=5mA) 12 8 -20 0 20 40 60 TJ, Junction Tempreature(℃) 80 100 As shown in Figure 8, in the practical application of DMZ1015E/DMX1015E, with the increase of device temperature, its output voltage will also increase, and the drain-source voltage will decrease, so that the device's power consumption will also decrease. In this way, the temperature of DMZ1015E/DMX1015E will decrease. This negative feedback mechanism enables DMZ1015E/ DMX1015E to reach a stable thermal equilibrium state. Ultra-high threshold voltage depletion mode MOSFET and its application were first proposed by ARK Microelectronics Co., LTD. Design engineers can determine the applicable range of DMZ1015E/DMX1015E according to the product specifications of DMZ1015E/DMX1015E and this application note. ARK Microelectronics Co., Ltd. www.ark-micro.com 5/8 Rev. 2.3 Dec. 2020 DMZ1015E/DMX1015E Package Dimensions ARK Microelectronics Co., Ltd. www.ark-micro.com 6/8 Rev. 2.3 Dec. 2020 DMZ1015E/DMX1015E ARK Microelectronics Co., Ltd. www.ark-micro.com 7/8 Rev. 2.3 Dec. 2020 DMZ1015E/DMX1015E Published by ARK Microelectronics Co., Ltd. ADD: D26,UESTC National Science Park No. 1 Shuangxing Avenue, Chengdu, Sichuan. All Rights Reserved. Disclaimers ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. 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Life Support Policy: ARK Microelectronics Co., Ltd’s products are not authorized for use as critical components in life devices or systems without the expressed written approval of ARK Microelectronics Co., Ltd. As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructions for used provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ark-micro.com 8/8 Rev. 2.3 Dec. 2020