R1210Nxx2x SERIES
PWM Step-up DC/DC Controller
NO.EA-064-181214
OUTLINE
The R1210Nxx2C/xx2D Series are CMOS-based PWM step-up DC/DC Converter controllers, with high
accuracy, low supply current.
Each of the R1210Nxx2x Series consists of an oscillator, a PWM circuit, a reference voltage unit, an error
amplifier, phase compensation circuit, resistors for voltage detection, a chip enable circuit, a controller against
drastic load transient and an output voltage detector. A low ripple, high efficiency step-up DC/DC converter can
be composed of this IC with only four external components, or an inductor, a diode, a transistor and a capacitor.
The R1210Nxx2x Series can detect drastic change of output voltage with a circuit controller, the load transient
response is improved.
Each of the R1210Nxx2x Series has a driver pin, or ‘EXT’ pin for external transistor. By connecting a power
transistor with low ON-resistance to EXT pin, a large current flows through an inductor, thus, large output current
can be supplied.
The built-in chip enable circuit can make the standby mode with ultra low quiescent current.
Since the package for these ICs is small SOT-23-5, high density mounting of the ICs on board is possible.
FEATURES
External Components ....................................... Only an inductor, a diode, a capacitor, and a transistor
Standby Current ................................................ Max. 0.5A
Low Temperature-Drift Coefficient of Output Voltage Typ.100ppm/C
Output Voltage .................................................. Stepwise Setting with a step of 0.1V in the range of
2.2V to 6.0V
Two choices of Basic Oscillator Frequency ...... 100kHz (xx2C), 180kHz (xx2D)
Output Voltage Accuracy................................... 2.5%
Small Package .................................................. SOT-23-5
Low Ripple, Low Noise
Oscillator Start-up Voltage ................................ Max. 0.8V
APPLICATIONS
Power source for battery-powered equipment.
Power source for portable communication appliances, cameras, VCRs
Power source for appliances of which require higher voltage than battery voltage.
1
R1210Nxx2x
BLOCK DIAGRAMS
Vref Circuit
EXT
5
Phase Comp.
Buffer
2
VOUT
4
GND
-
PWM Controller
OSC
+
+
+
Chip Enable
1
CE
SELECTION GUIDE
In the R1210N Series, the output voltage, the oscillator frequency for the ICs can be selected at the user’s
request.
The selection can be made by designating the part number as shown below;
Product Name
Package
Quantity per Reel
Pb Free
Halogen Free
R1210Nxx2-TR-FE
SOT-23-5
3,000 pcs
Yes
Yes
xx : Setting Output Voltage(VOUT)
Stepwise setting with a step of 0.1V in the range of 2.2V（22）to 6.0V（60）
: Designation of Oscillator Frequency
C：100kHz
D：180kHz
2
R1210Nxx2x
PIN CONFIGURATION
SOT-23-5
5
4
(mark side)
1
2
3
PIN DESCRIPTIONS
Pin No
Symbol
Pin Description
1
CE
Chip Enable Pin
2
VOUT
Pin for Output Voltage
3
NC
No Connection
4
GND
Ground Pin
5
EXT
External Transistor Drive Pin
ABSOLUTE MAXIMUM RATINGS
Symbol
Item
Rating
Unit
VOUT
VOUT Pin Output Voltage
-0.3 to 9.0
V
VEXT
EXT Pin Output Voltage
-0.3 to VOUT0.3
V
VCE
CE Pin Input Voltage
-0.3 to 9.0
V
IEXT
EXT Pin Output Current
40
mA
PD
Power Dissipation
420
mW
Topt
Operating Temperature Range
40 to 85
C
Tstg
Storage Temperature Range
55 to 125
C
*1) For Power Dissipation, please refer to PACKAGE INFORMATION.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the
permanent damages and may degrade the life time and safety for both device and system using the device
in the field.
The functional operation at or over these absolute maximum ratings is not assured.
3
R1210Nxx2x
ELECTRICAL CHARACTERISTICS
R1210Nxx2x
Topt=25°C
Symbol
VOUT
Item
Output Voltage
Conditions
VIN=VSET0.6, IOUT=1mA
VIN
Maximum Input Voltage
VOUT/
T
Step-up Output Voltage
Temperature Coefficient
40C
Vstart
Start-up Voltage
VIN0V2V
Istandby
Topt
85C
VOUT= VSET0.96 EXT at no load
2.5V
VSET
3.0V
VOUT= VSET0.96 EXT at no load
3.1V
VSET
3.9V
Supply Current 1
VOUT= VSET0.96 EXT at no load
4.0V
VSET
4.4V
VOUT= VSET0.96 EXT at no load
4.5V
VSET
4.9V
VOUT= VSET0.96 EXT at no load
5.0V
VSET
5.4V
VOUT= VSET0.96 EXT at no load
5.5V
VSET
6.0V
IDD2
4
Typ.
0.975
Supply Current 2
Max.
Unit
1.025
V
8
V
100
Supply Current 3(Standby) VOUT=6.5V,VCE0V
VOUT= VSET0.96 EXT at no load
VSET
2.4V
2.2V
IDD1
Min.
ppm/C
0.8
V
0.5
A
18
35
23
45
20
40
25
50
25
50
30
60
30
60
35
70
35
70
40
80
45
90
50
100
50
100
55
110
10
15
15
22
VOUT=VCE=VSET+0.5
A
(xx2C)
A
(xx2D)
A
(xx2C)
A
(xx2D)
A
(xx2C)
A
(xx2D)
A
(xx2C)
A
(xx2D)
A
(xx2C)
A
(xx2D)
A
(xx2C)
A
(xx2D)
A
(xx2C)
A
(xx2D)
A
(xx2C)
A
(xx2D)
R1210Nxx2x
Symbol
Item
Conditions
Min.
Typ.
VSET
2.5V
IEXTH
fosc
fosc/
T
Maxdty
IEXTL
EXT “H” Output Current
Maximum Oscillator
Frequency
Oscillator Frequency
Temperature Coefficient
Oscillator Maximum
Duty Cycle
EXT “L” Output Current
2.2V
VEXT=VOUT-0.4V
2.6V
VSET
3.0V
VEXT=VOUT-0.4V
VSET
3.5V
3.1V
VEXT=VOUT-0.4V
3.6V
VSET
4.0V
VEXT=VOUT-0.4V
4.1V
VSET
4.5V
VEXT=VOUT-0.4V
4.6V
VSET
5.0V
VEXT=VOUT-0.4V
5.1V
VSET
5.5V
VEXT=VOUT-0.4V
5.6V
VSET
6.0V
VEXT=VOUT-0.4V
Max.
Unit
-1.0
mA
-2.0
mA
-2.5
mA
-3.0
mA
-3.5
mA
-4.0
mA
-4.5
mA
-5.0
mA
80
100
120
144
180
216
VOUT=VCE=VSET0.96
40C
70
kHz
(xx2D)
0.5
kHz/C
0.6
kHz/C
(xx2C)
Topt
85C
VOUT=VCE=VSET0.96,
(VEXT “H” Side)
kHz
(xx2C)
85
(xx2D)
97
%
2.2V
VSET
2.5V,VEXT=0.4V
1.0
mA
2.6V
VSET
3.0V,VEXT=0.4V
2.0
mA
3.1V
VSET
3.5V,VEXT=0.4V
2.5
mA
3.6V
VSET
4.0V,VEXT=0.4V
3.0
mA
4.1V
VSET
4.5V,VEXT=0.4V
3.5
mA
4.6V
VSET
5.0V,VEXT=0.4V
4.0
mA
5.1V
VSET
5.5V,VEXT=0.4V
4.5
mA
5.6V
VSET
6.0V,VEXT=0.4V
5.0
mA
0.9
V
VCEH
CE “H” Input Voltage
VOUT=VSET0.96
VCEL
CE “L” Input Voltage
VOUT=VSET0.96
ICEH
CE “H” Input Current
VOUT=VCE=6.5V
-0.1
ICEL
CE “L” Input Current
VIN=6.5V, VCE=0V
-0.1
0.3
V
0.0
0.1
A
0.0
0.1
A
*Note: VSET means setting Output Voltage.
5
R1210Nxx2x
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
6
R1210Nxx2x
TEST CIRCUITS
SD
Cb
L
Tr
EXT
VOUT
Rb
CL
V
EXT
VOUT
C
VIN
GND
GND
CE
CE
OSCILLOSCOPE
Test Circuit 1
EXT
Test Circuit 2
EXT
VOUT
VOUT
A
A
GND
Test Circuit 3
EXT
GND
CE
Test Circuit 4
VOUT
EXT
GND
CE
VOUT
C
CE
GND
OSCILLOSCOPE
Test Circuit 5
Inductor (L)
: 27H (Sumida Electric Co., Ltd. CD104NP)
Diode (SD)
: RB491D (Rohm, Schottky Type)
Capacitor (CL)
: 47F2 (Tantalum Type)
Transistor (Tr)
: 2SD1628G
Base Resistor (Rb)
: 300
Base Capacitor (Cb)
: 0.01F(Ceramic Type)
CE
OSCILLOSCOPE
Test Circuit 6
The typical characteristics were obtained by use of these test circuits.
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 5
Test Circuit 6
: Typical Characteristics 1) 2) 3) 4) 5)
: Typical Characteristics 9) 10)
: Typical Characteristics 6) 7)
: Typical Characteristics 8)
: Typical Characteristics 11)
: Typical Characteristics 12)
7
R1210Nxx2x
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Output Current
R1210N302C
R1210N302D
L:27μH
L:27μH
3.2
Output Voltage VOUT(V)
Output Voltage VOUT(V)
3.2
VIN:1.5V
VIN:2.0V
3.1
VIN:0.9V
VIN:2.5V
3.0
2.9
VIN:1.5V
3.1
VIN:0.9V
VIN:2.5V
3.0
2.9
2.8
2.8
0
200
400
600
Output Current IOUT (mA)
0
800
R1210N502C
200
400
600
Output Current IOUT (mA)
5.4
L:27μH
5.4
VIN:3.0V
5.0
VIN:4.0V
4.8
VIN:2.0V
Output Voltage VOUT(V)
VIN:2.0V
5.2
800
R1210N502D
L:27μH
Output Voltage VOUT(V)
VIN:2.0V
VIN:1.5V
4.6
5.2
5.0
VIN:3.0V
VIN:4.0V
4.8
VIN:1.5V
4.6
4.4
4.4
0
200
400
600
Output Current IOUT (mA)
0
800
200
400
600
Output Current IOUT (mA)
800
2) Efficiency vs. Output Current
R1210N302C
R1210N302D
L:27μH
L:27μH
100
100
VIN:2.5V
80
Efficiency η (%)
Efficiency η (%)
VIN:2.5V
VIN:2.0V
60
VIN:1.5V
40
VIN:0.9V
VIN:2.0V
60
VIN:1.5V
40
VIN:0.9V
20
20
0
0
0
8
80
200
400
600
Output Current IOUT (mA)
800
0
200
400
600
Output Current IOUT (mA)
800
R1210Nxx2x
R1210N502C
R1210N502D
L:27μH
L:27μH
100
100
80
VIN:4.0V
Efficiency η (%)
Efficiency η (%)
VIN:4.0V
VIN:3.0V
60
VIN:1.5V
VIN:2.0V
40
20
80
VIN:3.0V
60
VIN:2.0V
VIN:1.5V
40
20
0
0
0
200
400
600
Output Current IOUT (mA)
800
0
200
400
600
Output Current IOUT (mA)
800
3) Ripple Voltage vs. Output Current
R1210N302C
R1210N302D
L:27μH
280
Ripple Voltage Vripple (mV)
Ripple Voltage Vripple (mV)
L:27μH
240
VIN:1.5V
200
VIN:0.9V
160
120
VIN:2.5V
80
40
0
280
240
VIN:1.5V
200
160
VIN:0.9V
120
VIN:2.5V
80
40
0
0
200
400
600
Output Current IOUT (mA)
800
0
200
400
600
Output Current IOUT (mA)
R1210N502C
R1210N502D
280
240
VIN:1.5V
160
VIN:3.0V
120
VIN:4.0V
80
L:27μH
Ripple Voltage Vripple (mV)
Ripple Voltage Vripple (mV)
L:27μH
200
800
40
0
280
240
VIN:1.5V
200
VIN:0.9V
VIN:3.0V
160
120
VIN:4.0V
80
40
0
0
200
400
600
Output Current IOUT (mA)
800
0
200
400
600
Output Current IOUT (mA)
800
9
R1210Nxx2x
4) Start-up Voltage/ Hold-on Voltage vs. Output Current (Topt=25°C)
R1210N302C
R1210N302D
L:27µH
L:27µH
1.6
Start-up/Hold-on Voltage
Vstart/Vhold(V)
Start-up/Hold-on Voltage
Vstart/Vhold(V)
1.6
Vstart
1.2
0.8
Vhold
0.4
0.0
Vstart
1.2
0.8
0.4
Vhold
0.0
0
20
40
60
80
Output Current IOUT(mA)
100
0
20
R1210N502C
40
60
80
Output Current IOUT (mA)
R1210N502D
L:27µH
L:27µH
1.6
1.6
Start-up/Hold-on Voltage
Vstart/Vhold(V)
Start-up/Hold-on Voltage
Vstart/Vhold(V)
100
Vhold
1.2
Vstart
0.8
0.4
0.0
Vstart
1.2
0.8
Vhold
0.4
0.0
0
20
40
60
80
Output Current IOUT (mA)
100
0
20
40
60
80
Output Current IOUT (mA)
100
5) Output Voltage vs. Temperature
R1210N302C
R1210N302D
L:27µH
L:27µH
3.10
3.05
2.90
-50
10
IOUT:30mA
IOUT:100mA
3.00
2.95
Output Voltage VOUT(V)
Output Voltage VOUT(V)
3.10
IOUT:0mA
-25
0
25
50
75
Temperature Topt(°C)
100
3.05
IOUT:30mA
IOUT:100mA
3.00
IOUT:0mA
2.95
2.90
-50
-25
0
25
50
75
Temperature Topt(°C)
100
R1210Nxx2x
R1210N502C
R1210N502D
L:27µH
L:27µH
5.15
Output Voltage VOUT(V)
Output Voltage VOUT(V)
5.15
5.10
5.05
IOUT:30mA
IOUT:100mA
5.00
4.95
IOUT:0mA
4.90
4.85
-50
-25
0
25
50
75
Temperature Topt(°C)
5.10
5.05
IOUT:100mA
5.00
4.95
IOUT:0mA
4.90
4.85
-50
100
IOUT:30mA
-25
0
25
50
75
Temperature Topt(°C)
100
6) Supply Current 1 vs. Temperature
R1210N302C
R1210N302D
40
Supply Current Iss1(μA)
Supply Current Iss1(μA)
40
30
20
10
0
-50
-25
0
25
50
75
Temperature Topt(°C)
30
20
10
0
-50
100
-25
R1210N502C
80
Supply Current Iss1(μA)
Supply Current Iss1(μA)
100
R1210N502D
80
60
40
20
0
-50
0
25
50
75
Temperature Topt(°C)
-25
0
25
50
75
Temperature Topt(°C)
100
60
40
20
0
-50
-25
0
25
50
75
Temperature Topt(°C)
100
11
R1210Nxx2x
7) Supply Current 2 vs. Temperature
R1210N302C
R1210N302D
25
Supply Current2 Iss2 (μA)
Supply Current2 Iss2(μA)
25
60
15
10
5
0
-50
-25
0
25
50
75
Temperature Topt(°C)
60
15
10
5
0
-50
100
-25
R1210N502C
R1210N502D
Supply Current2 Iss2 (μA)
Supply Current2 Iss2 (μA)
100
25
25
60
15
10
5
0
-50
0
25
50
75
Temperature Topt(°C)
-25
0
25
50
75
Temperature Topt(°C)
60
15
10
5
0
-50
100
-25
0
25
50
75
Temperature Topt(°C)
100
8) Supply Current 3 vs. Temperature
R1210N302D
Supply Current3 Istandby(μA)
Supply Current 3 Istandby (μA)
R1210N302C
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
-50
-25
0
25
50
Temperature Topt(°C)
12
75
100
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
-50
-25
0
25
50
75
Temperature Topt(°C)
100
R1210Nxx2x
R1210N502D
Supply Current3 Istandby(μA)
Supply Current3 Istandby(μA)
R1210N502C
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
-50
-25
0
25
50
75
Temperature Topt(°C)
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
-50
100
-25
0
25
50
75
Temperature Topt(°C)
100
9) Oscillator Frequency vs. Temperature
R1210N302D
Oscillator Frequency fosc(kHz)
Oscillator Frequency fosc(kHz)
R1210N302C
300
250
200
150
100
50
0
-50
-25
0
25
50
75
Temperature Topt(°C)
300
250
200
150
100
50
0
-50
100
-25
250
200
150
100
50
0
-50
-25
0
25
50
75
Temperature Topt(°C)
100
R1210N502D
300
Oscillator Frequency fosc(kHz)
Oscillator Frequency fosc(kHz)
R1210N502C
0
25
50
75
Temperature Topt(°C)
100
300
250
200
150
100
50
0
-50
-25
0
25
50
75
Temperature Topt(°C)
100
13
R1210Nxx2x
10) Maximum Duty Cycle vs. Temperature
R1210N302D
Maximum Duty Cycle Duty(%)
Maximum Duty Cycle Duty(%)
R1210N302C
100
90
80
70
60
50
40
-50
-25
0
25
50
75
Temperature Topt(°C)
100
90
80
70
60
50
40
-50
100
-25
90
80
70
60
50
40
-50
-25
0
25
50
75
Temperature Topt(°C)
100
R1210N502D
100
Maximum Duty Cycle Duty(%)
Maximum Duty Cycle Duty(%)
R1210N502C
0
25
50
75
Temperature Topt(°C)
100
90
80
70
60
50
40
-50
100
-25
0
25
50
75
Temperature Topt(°C)
100
11) EXT “H” Output Current vs. Temperature
R1210N302C
R1210N302D
20
EXT "H" Output Current
IEXTH (mA)
EXT "H" Output Current
IEXTH (mA)
20
15
15
10
10
5
0
-50
14
-25
0
25
50
75
Temperature Topt(°C)
100
5
0
-50
-25
0
25
50
75
Temperature Topt(°C)
100
R1210Nxx2x
R1210N502C
R1210N502D
20
EXT "H" Output Current
IEXTH (mA)
EXT "H" Output Current
IEXTH (mA)
20
15
15
10
10
5
0
-50
-25
0
25
50
75
Temperature Topt(°C)
5
0
-50
100
-25
0
25
50
75
Temperature Topt(°C)
100
12) EXT “L” Output Current vs. Temperature
R1210N302C
R1210N302D
20
EXT "L" Output Current
IEXTL (mA)
EXT "L" Output Current
IEXTL (mA)
20
15
15
10
10
5
0
-50
-25
0
25
50
75
Temperature Topt(°C)
5
0
-50
100
-25
R1210N502C
20
EXT "L" Output Current
IEXTL (mA)
EXT "L" Output Current
IEXTL (mA)
100
R1210N502D
20
15
15
10
10
5
0
-50
0
25
50
75
Temperature Topt(°C)
-25
0
25
50
75
Temperature Topt(°C)
100
5
0
-50
-25
0
25
50
75
Temperature Topt(°C)
100
15
R1210Nxx2x
13) CE “H” Input Voltage vs. Temperature
R1210N602C
R1210N602D
0.9
CE "H" Input Voltage VCEH (V)
CE "H" Input Voltage VCEH (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
-50
-25
0
25
50
75
Temperature Topt(°C)
0.8
0.7
0.6
0.5
0.4
0.3
-50
100
-25
0
25
50
75
Temperature Topt(°C)
100
14) CE “L” Input Voltage vs. Temperature
R1210N602C
R1210N602D
0.9
CE "L" Input Voltage VCEL (V)
CE "L" Input Voltage VCEL (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
-50
-25
0
25
50
75
Temperature Topt(°C)
100
0.8
0.7
0.6
0.5
0.4
0.3
-50
-25
0
25
50
75
Temperature Topt(°C)
100
15) Output Waveform at Power-on (Topt=25°C)
((R1210N502C)) (VIN: 0V3.0V)
IOUT: 1mA
IOUT: 100mA
VIN
2V/div
VOUT
M50.0ms
16
VIN
2V/div
VOUT
M50.0ms
R1210Nxx2x
((R1210N502D)) (VIN: 0V3.0V)
IOUT: 1mA
IOUT: 100mA
VIN
VIN
2V/div
2V/div
VOUT
VOUT
M50.0ms
M50.0ms
((R1210N302C)) (VIN: 0V1.5V)
IOUT: 1mA
IOUT: 100mA
VIN
VIN
1V/div
1V/div
VOUT
VOUT
M50.0ms
M50.0ms
((R1210N302D)) (VIN: 0V1.5V)
IOUT: 1mA
IOUT: 100mA
VIN
VIN
1V/div
VOUT
M50.0ms
1V/div
VOUT
M50.0ms
17
R1210Nxx2x
16) Load Transient Response (Topt=25°C)
((R1210N502C)) (VIN: 3.0V,IOUT:1mA200mA)
IOUT
IOUT
200mV
200mV
VOUT
VOUT
M50.0ms
M50.0ms
((R1210N502D)) (VIN: 3.0V,IOUT:1mA200mA)
IOUT
IOUT
200mV
200mV
VOUT
VOUT
M50.0ms
M50.0ms
((R1210N302C)) (VIN: 1.5V,IOUT:1mA100mA)
IOUT
IOUT
100mV
100mV
VOUT
M50.0ms
18
VOUT
M50.0ms
R1210Nxx2x
((R1210N302D)) (VIN: 1.5V,IOUT:1mA100mA)
IOUT
IOUT
100mV
100mV
VOUT
M50.0ms
VOUT
M50.0ms
19
1. The products and the product specifications described in this document are subject to change or discontinuation of
production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer
to our sales representatives for the latest information thereon.
2. The materials in this document may not be copied or otherwise reproduced in whole or in part without prior written
consent of our company.
3. Please be sure to take any necessary formalities under relevant laws or regulations before exporting or otherwise
taking out of your country the products or the technical information described herein.
4. The technical information described in this document shows typical characteristics of and example application circuits
for the products. The release of such information is not to be construed as a warranty of or a grant of license under
our company's or any third party's intellectual property rights or any other rights.
5. The products listed in this document are intended and designed for use as general electronic components in standard
applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products,
amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality and
reliability, for example, in a highly specific application where the failure or misoperation of the product could result in
human injury or death (aircraft, spacevehicle, nuclear reactor control system, traffic control system, automotive and
transportation equipment, combustion equipment, safety devices, life support system etc.) should first contact us.
6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products
are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from
such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy
feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or
damage arising from misuse or inappropriate use of the products.
7. Anti-radiation design is not implemented in the products described in this document.
8. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and
characteristics in the evaluation stage.
9. WLCSP products should be used in light shielded environments. The light exposure can influence functions and
characteristics of the products under operation or storage.
10. There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case
of recognizing the marking characteristic with AOI, please contact our sales or our distributor before attempting to use
AOI.
11. Please contact our sales representatives should you have any questions or comments concerning the products or
the technical information.
Official website
https://www.nisshinbo-microdevices.co.jp/en/
Purchase information
https://www.nisshinbo-microdevices.co.jp/en/buy/
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