DTQ3409

DTQ3409 www.din-tek.jp P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Typ. ID (A) 0.009 at VGS = - 10 V - 50d 0.014 at VGS = - 4.5 V - 40d • DT-Trench Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) APPLICATIONS 45 nC • Battery, Load and Adaptor Switches - Notebook Computers - Notebook Battery Packs PDFN 3.3x3.3 Top View S Bottom View Top View G 1 8 2 7 3 6 4 5 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 100 µs) Limit - 40 ± 20 - ID IDM - 16 a, b - 200 - 50d TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD A - 4.1a, b - 45 92 96 51 5.5 a, b 3.2a, b - 55 to 150 260 TJ, Tstg Operating Junction and Storage Temperature Range V 50d - 40d - 24 a, b Continuous Source-Drain Diode Current Unit Soldering Recommendations (Peak Temperature)e, f mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case t 10 s Steady State Symbol RthJA RthJC Typical 21 2.1 Maximum 25 2.6 Unit °C/W Notes: C Package limited. D Surface mounted on 1" x 1" FR4 board. E t =  s. F See solder profile The P')1.3;.3is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. G Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. H Maximum under steady state conditions is 80 °C/W. 1 DTQ3409 www.din-tek.jp SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0, ID = - 250 µA - 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage V - 22 ID = - 250 µA mV/°C 4.1 VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V -3 ± 100 Zero Gate Voltage Drain Current IDSS VDS = - 32 V, VGS = 0 V -1 VDS = - 32 V, VGS = 0 V, TJ = 55 °C -5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS  - 10 V, VGS = - 10 V -1 V nA µA A - 50 VGS = - 10 V, ID = - 15 A 0.009 0.012 VGS = - 4.5 V, ID = - 10 A 0.014 0.018 VDS = - 10 V, ID = - 15 A 60  S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time 3300 VDS = - 32 V, VGS = 0 V, f = 1 MHz tr 238 45 23 VDS = - 32 V, VGS = - 4.5 V, ID = - 10 A 18 f = 1 MHz VDD = - 32 V, RL = 1.5  ID  - 10 A, VGEN = - 10 V, Rg = 1  0.5 2.5 18 63 tf  55 td(on) VDD = - 32 V, RL = 1.5  ID  - 10 A, VGEN = - 4.5 V, Rg = 1  4.8 13 11 tr nC 11 tf td(off) pF 550 VDS = - 32 V, VGS = - 10 V, ID = - 10 A td(on) td(off) 4100 ns 65 50 22 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Current (100 µs) ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 50 IS = - 3 A, VGS = 0 - 0.75 - 200 - 1.20 23 46 ns 12 24 nC IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 9 14 A V ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTQ3409 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 50 VGS = - 10 V thru - 5 V ID - Drain Current (A) 40 40 20 10 1.0 2.0 3.0 4.0 20 TC = 125 °C TC = - 55 °C VGS = - 2 V 0.0 TC = 25 °C 30 10 VGS = - 3 V 0 0 0.0 5.0 1.0 2.0 3.0 4.0 5.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5000 0.018 4000 C - Capacitance (pF) 0.021 VGS = - 4. 5 V 0.015 0.012 VGS = - 10 V 6.0 C iss 3000 2000 1000 0.009 Coss Crss 0 0.00 0 20 40 60 80 0 100 4 ID - Drain Current (A) 8 12 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.6 10 RDS(on) - On-Resistance (Normalized) ID = - 10 A VGS - Gate-to-Source Voltage (V) RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS = - 4 V 30 8 VDS = - 32 V 6 4 2 VGS = - 10 V ID = - 15 A 1.4 1.2 VGS = - 4.5 V 1.0 0.8 0.6 0 0 10 20 30 40 50 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 3 DTQ3409 www.din-tek.jp 100 0.050 10 0.040 RDS(on) - On-Resistance (Ω) IS - Source Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 ID = - 15 A 0.030 0.020 TJ = 125 °C 0.010 T J = 25 °C 0.001 0.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 Source-Drain Diode Forward Voltage 8 10 On-Resistance vs. Gate-to-Source Voltage 250 0.8 0.6 200 ID = - 250 μA 0.2 Power (W) 0.4 ID = - 1 mA 150 100 0 50 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 IDM Limited ID - Drain Current (A) 100 ID Limited 100 μs 10 1 ms 1 10 ms Limited by RDS(on)* 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.01 DC BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 4 6 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) VGS(th) - Variance (V) 4 DTQ3409 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 90 ID - Drain Current (A) 72 54 Limited by Package 36 18 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 125 7.5 100 6.0 75 4.5 Power (W) Power (W) Current Derating* 50 3.0 1.5 25 0.0 0 0 25 50 75 100 125 TC - Case Temperature (°C) Power, Junction-to-Case 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 DTQ3409 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 0.0001 t1 t2 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.01 0.0001 0.1 0.05 0.02 Single Pulse 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 6 1 10 3DFNDJH,QIRUPDWLRQ ZZZGLQWHNMS D D2 b E2 SYMBOL MIN 0.70 A 0.00 A1 0.24 b 0.08 b1 Θ A1 A C 4-R e L1 L L2 H E E1 b1 D1 E3 PDFN3.3*3.3-8L Case Outline c D D1 D2 E E1 E2 E3 e H L L1 L2 R Θ 3.25 3.05 2.40 3.00 1.35 1.20 0.40 NOM 0.80 0.03 0.30 0.13 0.152REF 3.32 3.15 2.50 3.10 MAX 0.90 0.05 0.35 0.18 3.40 3.25 2.60 3.20 1.55 1.40 0.60 1.45 1.30 0.50 0.65 BSC 3.20 3.30 3.40 0.30 0.40 0.50 0.10 0.15 0.20 1.13 REF 0.20 REF 6° 14° 10° 7 Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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