0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SCT2A23ASTER

SCT2A23ASTER

  • 厂商:

    SCT(芯洲科技)

  • 封装:

    SOP8_EP

  • 描述:

  • 数据手册
  • 价格&库存
SCT2A23ASTER 数据手册
芯 洲 科 SCT2A23A 技 Silicon Content Technology Rev.1.1 4.5V-100V Vin, 1.2A, Step-down DCDC Converter FEATURES DESCRIPTION     The SCT2A23A is 1.2A Step-down DCDC converter with wide input voltage, ranging from 4.5V to 100V, which integrates an 600mΩ high-side MOSFET and a 300mΩ low-side MOSFET. The SCT2A23A, adopting the constant-on time (COT) mode control, supports the PFM mode with typical 160uA low quiescent current which assists the converter on achieving high efficiency at light load or standby condition.             Wide Input Range: 4.5V-100V 1.2A Continuous Output Current 2.75A peak current limit Integrated 600mΩ High-Side and 300mΩ LowSide Power MOSFETs 15uA Quiescent Current with VCC diode 160uA Quiescent Current without VCC diode Selectable PFM, USM and FPWM Operation Modes 1.2V ±2% Feedback Reference Voltage 4.3ms Internal Soft-start Time Fixed Switching Frequency at 300KHz COT Control Mode FPWM mode support Iso-buck Topology Precision Enable Threshold for Programmable Input Voltage Under-Voltage Lock Out Protection (UVLO) Threshold and Hysteresis Cycle-by-Cycle Current Limit Over-Voltage Protection Over-Temperature Protection Available in an ESOP-8 Package The SCT2A23A features selectable operation mode at light load, which provides the flexibility to select Pulse Frequency Modulation (PFM) to achieve high efficiency at the light-load, Ultrasonic Mode (USM) to keep the switching frequency above audible frequency areas during light-load conditions, and forced Pulse Width Modulation (FPWM) to achieve smaller output ripple and support isolation buck topology. The SCT2A23A offers cycle-by-cycle current limit protection, thermal shutdown protection, output overvoltage protection and over temperature protection. The device is available in an 8-pin thermally enhanced ESOP-8 package. APPLICATIONS    GPS tracker E-bike, Scooter BMS TYPICAL APPLICATION 100 90 L1 SW C4 C2 VIN VIN D1 BST SCT2A23A R1 EN R4 C5 C6 C3 VCC R2 MODE 80 FB R3 Efficiency(%) GND C1 VOUT 70 60 50 40 30 PFM 20 R5 FCCM 10 USM 0 0.001 0.01 0.1 1 Iload(A) Efficiency, Vin=48V, Vout=12V 4.5V-100V, Buck Converter For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A 1 SCT2A23A REVISION HISTORY NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Revision 1.0: Release to production Revision 1.1: Update typo(I2) in Figure 7. DEVICE ORDER INFORMATION PART NUMBER PACKAGE MARKING PACKAGE DISCRIPTION SCT2A23ASTE A23A 8-Lead Plastic ESOP 1)For Tape & Reel, Add Suffix R (e.g. SCT2A23ASTER). ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION Over operating free-air temperature unless otherwise noted(1) DESCRIPTION MIN MAX UNIT VIN, EN -0.3 105 V BOOT -0.3 110 V SW -1 105 V VCC, MODE -0.3 30 V BOOT-SW -0.3 6 V FB -0.3 6 V Operating junction temperature TJ(2) -40 150 °C Storage temperature TSTG -65 150 °C (1) (2) GND 1 VIN 2 EN 3 MODE 4 Thermal PAD 9 8 SW 7 BST 6 VCC 5 FB Figure 1. 8-Lead Plastic E-SOP Stresses beyond those listed under Absolute Maximum Rating may cause device permanent damage. The device is not guaranteed to function outside of its Recommended Operation Conditions. The IC includes over temperature protection to protect the device during overload conditions. Junction temperature will exceed 150°C when over temperature protection is active. Continuous operation above the specified maximum operating junction temperature will reduce lifetime. PIN FUNCTIONS NAME NO. PIN FUNCTION GND 1 VIN 2 EN 3 MODE 4 Ground Input supply voltage. Connect a local bypass capacitor from VIN pin to GND pin. Path from VIN pin to high frequency bypass capacitor and GND must be as short as possible. Enable pin to the regulator with internal pull-up current source. a) Float or connect to VIN to enable the converter. b) Pull below 1.23V to disable the converter. c) Resistor divider from VIN to GND connecting EN pin can adjust the input voltage lockout threshold. PFM, USM and PWM mode selection. a) Connect the pin to VCC by a resistor will force the device in Forced Pulse Width Modulation (FPWM mode). b) Ground the pin to operate the device in Pulse Frequency Modulation (PFM mode) c) Floating the pin to operate the device in Ultrasonic Modulation (USM mode). 2 For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A SCT2A23A FB 5 VCC 6 BST 7 SW 8 Thermal Pad 9 Inverting input of the internal PWM comparator. The tap of external feedback resistor divider from the output to GND sets the output voltage. The device regulates FB voltage to the internal reference value of 1.2V typical. Output from the Internal High Voltage Regulator. The internal VCC regulator provides bias supply for the gate drivers and other internal circuitry. A larger than 1.0 μF decoupling capacitor is recommended. Power supply bias for high-side power MOSFET gate driver. Connect a 0.1uF capacitor from BOOT pin to SW pin. Bootstrap capacitor is charged when low-side power MOSFET is on or SW voltage is low. Regulator switching output. Connect SW to an external power inductor Heat dissipation path of die. Electrically connection to GND pin. Must be connected to ground plane on PCB for proper operation and optimized thermal performance. RECOMMENDED OPERATING CONDITIONS Over operating free-air temperature range unless otherwise noted PARAMETER DEFINITION VIN VOUT TJ Input voltage range Output voltage range Operating junction temperature MIN MAX UNIT 4.5 1.2 -40 100 30 125 V V °C MIN MAX UNIT -1 +1 kV -0.5 +0.5 kV ESD RATINGS PARAMETER VESD DEFINITION Human Body Model(HBM), per ANSI-JEDEC-JS-001-2014 specification, all pins(1) Charged Device Model(CDM), per ANSI-JEDEC-JS-0022014 specification, all pins(2) (1) JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process. THERMAL INFORMATION PARAMETER RθJA RθJC RθJB THERMAL METRIC Junction to ambient thermal resistance(1) resistance(1) Junction to case thermal Junction to board thermal resistance ESOP-8L UNIT 41.1 37.3 30.6 °C/W (1) SCT provides RθJA and RθJC numbers only as reference to estimate junction temperatures of the devices. RθJA and RθJC are not a characteristic of package itself, but of many other system level characteristics such as the design and layout of the printed circuit board (PCB) on which the SCT2A23A is mounted, thermal pad size, and external environmental factors. The PCB board is a heat sink that is soldered to the leads and thermal pad of the SCT2A23A. Changing the design or configuration of the PCB board changes the efficiency of the heat sink and therefore the actual RθJA and RθJC. For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A 3 SCT2A23A ELECTRICAL CHARACTERISTICS VIN=48V, TJ=-40°C~125°C, typical value is tested under 25°C. SYMBOL PARAMETER TEST CONDITION Power Supply VIN Operating input voltage VCC MIN 4.5 VCC Regulator Output VCC_UVLO TYP VCC UVLO Threshold VIN rising 100 UNIT V 7.3 V 4.1 V 250 mV IVCC_LIM VCC internal LDO current limit VCC short to ground 30 mA ISHDN Shutdown current from VIN pin EN=0, no load PFM mode, EN floating, no load, non-switching, BOOT-SW=5V Force VCC>8V PFM mode, EN floating, no load, non- switching, BOOT-SW=5V VCC floating 3 μA 15 μA 160 uA 600 mΩ 300 mΩ IQ Hysteresis MAX Quiescent current from VIN pin Power MOSFETs RDSON_H High-side MOSFET on-resistance RDSON_L VBOOT-VSW=5V Low-side MOSFET on-resistance Reference and Control Loop VREF Reference voltage of FB TJ=25°C 1.176 1.2 1.224 V Enable and Soft-startup VEN_H Enable high threshold 1.24 V VEN_L Enable low threshold 1.23 V IEN_L Enable pin current EN=0V 0.35 μA IEN_H Enable pin current EN=1.5V 17 uA Tss Internal soft start time 4.3 ms Switching Frequency Timing FSW Switching frequency VOUT=12V TOFF_MIN Minimum off-time VIN=12V Operation Mode PWM mode input logic high VMD_PWM threshold PFM mode with USM logic VMD_USM threshold PFM mode input logic low VMD_PFM threshold VCC floating LS zero cross current threshold ILIM_LSROC LS reverse current limit 300 kHz ns 4.65 2.3 From source to drain for PSM mode From drain to source for FCCM mode 330 200 V 1.5 Current Limit and Over Current Protection ILIM_HS HS MOSFET current limit Izc 270 2.75 3.5 V 0.5 V 3.3 A 50 mA 3.4 A 120 % Protection VFB/VREF rising 4 For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A SCT2A23A SYMBOL VOVP VUVP TSD PARAMETER TEST CONDITION MIN TYP MAX UNIT Feedback overvoltage with VFB/VREF falling 115 % Feedback under voltage with VFB/VREF rising 80 % respect to reference voltage VFB/VREF falling 75 % TJ rising 173 °C Hysteresis 25 °C respect to reference voltage Thermal shutdown threshold* *Derived from bench characterization For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A 5 SCT2A23A TYPICAL CHARACTERISTICS 90 80 80 70 70 Efficiency(%) 100 90 Efficiency(%) 100 60 50 40 30 60 50 40 30 PFM 20 10 0.001 0.01 0.1 Iload(A) FCCM 10 USM 0 PFM 20 FCCM USM 0 0.001 1 100 100 90 90 80 80 70 70 60 50 40 30 PFM 20 0.001 0.01 0.1 Iload(A) 1 60 50 40 30 PFM FCCM 10 USM 0 0.1 20 FCCM 10 Iload(A) Figure 3. Efficiency, Vin=72V, Vout=12V Efficiency(%) Efficiency(%) Figure 2. Efficiency, Vin=48V, Vout=12V 0.01 USM 0 1 Figure 5. Efficiency with VCC diode, Vin=48V, Vout=12V 0.001 0.01 Iload(A) 0.1 1 Figure 6. Efficiency with VCC diode, Vin=72V, Vout=12V 11.95 310 11.9 305 11.85 300 11.75 11.7 FSW(KHz) Vout (V) 11.8 290 11.65 PFM 11.6 FCCM 285 USM 280 11.55 11.5 11.45 0.001 275 0.201 0.401 0.601 0.801 1.001 Iload(A) For more information www.silicontent.com 20 40 60 80 VIN(V) Figure 4. Load Regulation, Vin=48V, Vout=12V 6 295 Figure 5. Switching Frequency VS Vin, Vout=12V © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A 100 SCT2A23A FUNCTIONAL BLOCK DIAGRAM VIN 0.35uA 17uA Thermal Shutdown + EN VCC LDO EN LOGIC VIN UVLO Reference 1.24V VCC PVDD LDO VREF EN_OK PVDD Current Limit and Off Timer Boot Charge Soft-start Timer BST DC Error Correction 1.2V Boot UVLO + PWM + + FB Ramp Compensation Control Logic ON Timer Generator + SW OVP PVDD LS 120%VREF MODE HS MODE Selection GND Figure 6. Functional Block Diagram For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A 7 SCT2A23A OPERATION Overview The SCT2A23A is a 4.5V-100V input, 1.2A output, Step-down DCDC converter with built-in 600mΩ Rdson highside and 300mΩ Rdson low-side power MOSFETs. It implements constant on time control to regulate output voltage, providing excellent line and load transient response, and internal error amplifier also could improve the line/load regulation. The device features three different operation modes at light loading: Pulse Frequency Modulation (PFM) mode, Ultra-Sonic Modulation (USM) mode and force Pulse Width Modulation (FPWM). In PFM mode, SCT2A23A provides high light load efficiency, because SCT2A23A design sleep control at light load for improve efficiency. In USM SCT2A23A keeps the switching frequency above audible frequency areas to avoid audible noise. In FPWM SCT2A23A achieves low output ripple and support Iso-buck topology. The SCT2A23A features an internal 4.3ms soft-start time to avoid large inrush current and output voltage overshoot during startup. The switching frequency is fixed at 300KHz. The device also supports monolithic startup with prebiased output condition for PSM mode and USM mode. The SCT2A23A has a default input start-up voltage of 4.1V with 250mV hysteresis. The EN pin is a high-voltage pin with a precision threshold that can be used to adjust the input voltage lockout thresholds with two external resistors to meet accurate higher UVLO system requirements. Floating EN pin enables the device with the internal pull-up current to the pin. Connecting EN pin to VIN directly or by a resistor will start up the device automatically. The SCT2A23A full protection features include the VCC input under-voltage lockout, the output over-voltage protection, over current protection with cycle-by-cycle current limit, output hard short protection and thermal shutdown protection. Constant On-Time Mode Control The SCT2A23A employs constant on-time (COT) Mode control providing fast transient with pseudo fixed switching frequency. At the beginning of each switching cycle, since the feedback voltage (VFB) is lower than the internal reference voltage (VREF), the high-side MOSFET (Q1) is turned on during one on-time and the inductor current rises to charge up the output voltage. The on-time is determined by the input voltage and output voltage. After the on-time, the high-side MOSFET (Q1) turns off and the low-side MOSFET (Q2) turns on after dead time duration. The inductor current drops and the output capacitors are discharged. When the output voltage decreases and the VFB decreased below the VREF or SS, the Q1 turns on again after another dead time duration. This repeats on cycle-by-cycle. The SCT2A23A works with an internal compensation, so customer could use the device easily, but adding feedforward cap Cf also provides flexibility for optimizing the loop stability and transient response. Enable and Under Voltage Lockout Threshold The SCT2A23A is enabled when the VCC pin voltage rises about 4.1V and the EN pin voltage exceeds the enable threshold of 1.24V. The device is disabled when the VCC pin voltage falls below 3.88V or when the EN pin voltage is below 1.23V. Internal pull up current source to EN pin allows the device enable when EN pin floats. EN pin is a high voltage pin that can be connected to VIN directly or by a resistor to start up the device. For a higher system UVLO threshold, connect an external resistor divider (R3 and R4) shown in Figure 9 from VIN to EN. The UVLO rising and falling threshold can be calculated by Equation 1 and Equation 2 respectively. 8 For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A SCT2A23A 𝑉𝐼𝑁_𝑟𝑖𝑠𝑒 = 𝑉𝐸𝑁 ∗ 𝑅3 + 𝑅4 𝑅4 VIN (1) I2 17uA I1 0.35uA (2) 𝑉𝐼𝑁_ℎ𝑦𝑠 = 𝐼2 ∗ 𝑅3 R3 EN Where VIN_rise: Vin rise threshold to enable the device + EN 1.24V R4 VIN_hys: Vin hysteresis threshold I1=0.35uA : neglect in calculation I2=17uA VEN=1.24V, assume VEN_r = VEN_f =1.24V Figure 7. System UVLO by enable divide Output Voltage The SCT2A23A regulates the internal reference voltage at 1.2V with 2% tolerance over the operating temperature and voltage range. The output voltage is set by a resistor divider from the output node to the FB pin. It is recommended to use 1% tolerance or better resistors. Use Equation 3 to calculate resistance of resistor dividers. To improve efficiency at light loads, larger value resistors are recommended. However, if the values are too high, the regulator will be more susceptible to noise affecting output voltage accuracy. 𝑉𝑂𝑈𝑇 𝑅𝐹𝐵_𝑇𝑂𝑃 = ( − 1) ∗ 𝑅𝐹𝐵_𝐵𝑂𝑇 𝑉𝑅𝐸𝐹 (3) where  RFB_TOP is the resistor connecting the output to the FB pin.  RFB_BOT is the resistor connecting the FB pin to the ground. Internal Soft-Start The SCT2A23A integrates an internal soft-start circuit that ramps the reference voltage from zero volts to 1.2V reference voltage in 4.3ms. If the EN pin is pulled below 1.23V, switching stops and the internal soft-start resets. The soft-start also resets during shutdown due to thermal overloading. Mode Selection The SCT2A23A features three different operation modes at light load by easily programming the MODE pin. The programming information is listed in following table. The mode setting is latched at each power up or enable and is not be able to be modified during operation. Table 1. MODE Pin config for different operation mode MODE Pin config Connect to VCC by a resistor Floating Connect to GND Operation Mode FPWM USM PFM Bootstrap Voltage Regulator An external bootstrap capacitor between BOOT pin and SW pin powers the floating gate driver to high-side power MOSFET. The bootstrap capacitor voltage is charged from an integrated voltage regulator when high-side power MOSFET is off and low-side power MOSFET is on. For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A 9 SCT2A23A Over Current Limit The inductor current is monitored during high-side MOSFET turn on. The SCT2A23A implements over current protection with cycle-by-cycle limiting high-side MOSFET peak current during unexpected overload or output hard short condition. SCT2A23A also provide a HS current limit off timer for making the IC safer when trigger over current condition. Once trigger HS over current, the present on-time period is immediately terminated, and will force LS turn on a nonresettable off timer for avoiding the inductor current run away. The length of off time is controlled by FB voltage and VIN voltage and could be calculated by the following equation. 𝑉𝐼𝑁 𝑇𝑜𝑓𝑓 = 1.5 ∗ ( ) 𝑢𝑠 20 ∗ 𝑉𝐹𝐵 + 4.35 (4) Over voltage Protection The SCT2A23A implements the Over-voltage Protection OVP circuitry to minimize output voltage overshoot during load transient, recovering from output fault condition or light load transient. The overvoltage comparator in OVP circuit compares the FB pin voltage to the internal reference voltage. When FB voltage exceeds 120% of internal 1.2V reference voltage, the high-side MOSFET turns off to avoid output voltage continue to increase, and low-side MOSFET will turn on to discharge the output voltage. When the FB pin voltage falls below 115% of the 1.2V reference voltage, the high-side MOSFET can turn on again. Thermal Shutdown The SCT2A23A protects the device from the damage during excessive heat and power dissipation conditions. Once the junction temperature exceeds 173°C, the internal thermal sensor stops power MOSFETs switching. When the junction temperature falls below 148°C, the device restarts with internal soft start phase. 10 For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A SCT2A23A APPLICATION INFORMATION Typical Application1 L1 68uH VOUT=12V IOUT =1.2A GND C1 10uF SW C2 0.1uF VIN VIN=24~100V R1 300K R2 20K D1 100V C4 0.1uF R4 271K BST SCT2A23A EN C5 68pF C6 22uF C3 2.2uF VCC MODE FB R3 5K R5 30K Figure 8. SCT2A23A Design Example, 12V Output with Programmable UVLO, PSM Mode Design Parameters Design Parameters Example Value Input Voltage 48V Normal, 24V to 100V Output Voltage 12V Output Current 1.2A Switching Frequency 300 KHz Output voltage ripple (peak to peak) 50mV Transient Response 10mA to 600mA load step ∆Vout = 80mV Transient Response 10mA to 1A load step ∆Vout = 200mV For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A 11 SCT2A23A Typical Application2: Low Iq application L1 68uH VOUT =12V IOUT=1.2A GND C1 10uF SW C2 0.1uF C4 0.1uF VIN VIN=12V~100V R1 100K BST C6 22uF C3 2.2uF SCT2A23A EN D1 100V R4 271K C5 68pF VCC D2 MODE FB R3 5K R5 30K Figure 11. SCT2A23A Design Example, 12V Output with VCC diode, PSM Mode and low Iq application Design Parameters 12 Design Parameters Example Value Input Voltage 48V Normal, 24V to 100V Output Voltage 12V Output Current 1.2A Switching Frequency 300 KHz Output voltage ripple (peak to peak) 50mV Transient Response 10mA to 600mA load step ∆Vout = 80mV Transient Response 10mA to 1A load step ∆Vout = 200mV For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A SCT2A23A Output Voltage The output voltage is set by an external resistor divider R4 and R5 in typical application schematic. Recommended R5 resistance is 30KΩ. Use equation 5 to calculate R4. 𝑉𝑂𝑈𝑇 𝑅4 = ( − 1) ∗ 𝑅5 𝑉𝑅𝐸𝐹 where:  (5) Table 1. R1, R2Value for Common Output Voltage (Room Temperature) VOUT R4 R5 5V 95 KΩ 30 KΩ 12V 271 KΩ 30 KΩ 24V 576 KΩ 30 KΩ VREF is the feedback reference voltage of 1.2V Under Voltage Lock-Out An external voltage divider network of R3 from the input to EN pin and R4 from EN pin to the ground can set the input voltage’s Under Voltage Lock-Out (UVLO) threshold. The UVLO has two thresholds, one for power up when the input voltage is rising and the other for power down or brown outs when the input voltage is falling. For the example design, the supply should turn on and start switching once the input voltage increases above 19.84V (start or enable). After the regulator starts switching, it should continue to do so until the input voltage falls below 14.74V (stop or disable). Use Equation 6 and Equation 7 to calculate the values 300 kΩ and 20 kΩ of R1 and R2 resistors. 𝑉𝐼𝑁𝑟𝑖𝑠𝑒 = 𝑉𝐸𝑁_𝐻 ∗ 𝑅1 + 𝑅2 𝑅2 𝑉𝐼𝑁_ℎ𝑦𝑠 = 𝐼2 ∗ 𝑅1 (6) (7) Where VIN_rise: Vin rise threshold to enable the device VIN_hys: Vin hysteresis threshold I2=17uA VEN_H=1.24V Inductor Selection There are several factors should be considered in selecting inductor such as inductance, saturation current, the RMS current and DC resistance(DCR). Larger inductance results in less inductor current ripple and therefore leads to lower output voltage ripple. However, the larger value inductor always corresponds to a bigger physical size, higher series resistance, and lower saturation current. A good rule for determining the inductance to use is to allow the inductor peak-to-peak ripple current to be approximately 20%~40% of the maximum output current. The peak-to-peak ripple current in the inductor ILPP can be calculated as in Equation 8. 𝐼𝐿𝑃𝑃 = Where      𝑉𝑂𝑈𝑇 ∗ (𝑉𝐼𝑁 − 𝑉𝑂𝑈𝑇 ) 𝑉𝐼𝑁 ∗ 𝐿 ∗ 𝑓𝑆𝑊 (8) ILPP is the inductor peak-to-peak current L is the inductance of inductor fSW is the switching frequency VOUT is the output voltage VIN is the input voltage For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A 13 SCT2A23A Since the inductor-current ripple increases with the input voltage, so the maximum input voltage in application is always used to calculate the minimum inductance required. Use Equation 9 to calculate the inductance value. 𝐿𝑀𝐼𝑁 = Where       𝑉𝑂𝑈𝑇 𝑉𝑂𝑈𝑇 ∗ (1 − ) 𝑓𝑆𝑊 ∗ 𝐿𝐼𝑅 ∗ 𝐼𝑂𝑈𝑇(𝑚𝑎𝑥) 𝑉𝐼𝑁(𝑚𝑎𝑥) (9) LMIN is the minimum inductance required fsw is the switching frequency VOUT is the output voltage VIN(max) is the maximum input voltage IOUT(max) is the maximum DC load current LIR is coefficient of ILPP to IOUT The total current flowing through the inductor is the inductor ripple current plus the output current. When selecting an inductor, choose its rated current especially the saturation current larger than its peak operation current and RMS current also not be exceeded. Therefore, the peak switching current of inductor, ILPEAK and ILRMS can be calculated as in equation 10 and equation 11. 𝐼𝐿𝑃𝐸𝐴𝐾 = 𝐼𝑂𝑈𝑇 + 𝐼𝐿𝑃𝑃 2 𝐼𝐿𝑅𝑀𝑆 = √(𝐼𝑂𝑈𝑇 )2 + Where     (10) 1 ∗ (𝐼𝐿𝑃𝑃 )2 12 (11) ILPEAK is the inductor peak current IOUT is the DC load current ILPP is the inductor peak-to-peak current ILRMS is the inductor RMS current In overloading or load transient conditions, the inductor peak current can increase up to the switch current limit of the device which is typically 2.75A. The most conservative approach is to choose an inductor with a saturation current rating greater than 2.75A. Because of the maximum ILPEAK limited by device, the maximum output current that the SCT2A23A can deliver also depends on the inductor current ripple. Thus, the maximum desired output current also affects the selection of inductance. The smaller inductor results in larger inductor current ripple leading to a lower maximum output current. Diode Selection The SCT2A23A requires an external catch diode between the SW pin and GND. The selected diode must have a reverse voltage rating equal to or greater than VIN(max). The peak current rating of the diode must be greater than the maximum inductor current. Schottky diodes are typically a good choice for the catch diode due to their low forward voltage. The lower the forward voltage of the diode, the higher the efficiency of the regulator. Typically, diodes with higher voltage and current ratings have higher forward voltages. A diode with a minimum of 100-V reverse voltage is preferred to allow input voltage transients up to the rated voltage of the SCT2A23A. For the example design, the SS510 Schottky diode is selected for its lower forward voltage and good thermal characteristics compared to smaller devices. The typical forward voltage of the SS510 is 0.7 volts at 5 A. The diode must also be selected with an appropriate power rating. The diode conducts the output current during the off-time of the internal power switch. The off-time of the internal switch is a function of the maximum input voltage, the output voltage, and the switching frequency. The output current during the off-time is multiplied by the forward voltage of the diode to calculate the instantaneous conduction losses of the diode. At higher switching frequencies, the ac losses of the diode need to be taken into account. The ac losses of the diode are due to the 14 For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A SCT2A23A charging and discharging of the junction capacitance and reverse recovery charge. Equation 12 is used to calculate the total power dissipation, including conduction losses and ac losses of the diode. The SS510 diode has a junction capacitance of 300 pF. Using Equation 12, the total loss in the diode at the maximum input voltage is 1.24 W. If the power supply spends a significant amount of time at light load currents or in sleep mode, consider using a diode which has a low leakage current and slightly higher forward voltage drop. 𝑃𝐷 = (𝑉𝐼𝑁_𝑀𝐴𝑋 − 𝑉𝑂𝑈𝑇 ) × 𝐼𝑂𝑈𝑇 × 𝑉𝑑 𝐶𝑗 × 𝑓𝑆𝑊 × (𝑉𝐼𝑁 + 𝑉𝑑 )2 + 𝑉𝐼𝑁_𝑀𝐴𝑋 2 (12) Input Capacitor Selection The input current to the step-down DCDC converter is discontinuous, therefore it requires a capacitor to supply the AC current to the step-down DCDC converter while maintaining the DC input voltage. Use capacitors with low ESR for better performance. Ceramic capacitors with X5R or X7R dielectrics are usually suggested because of their low ESR and small temperature coefficients, and it is strongly recommended to use another lower value capacitor (e.g. 0.1uF) with small package size (0603) to filter high frequency switching noise. Place the small size capacitor as close to VIN and GND pins as possible. The voltage rating of the input capacitor must be greater than the maximum input voltage. And the capacitor must also have a ripple current rating greater than the maximum input current ripple. The RMS current in the input capacitor can be calculated using Equation 13. ICINRMS = IOUT ∗ √ VOUT VOUT ∗ (1 − ) VIN VIN (13) The worst case condition occurs at VIN=2*VOUT, where: (14) ICINRMS = 0.5 ∗ IOUT For simplification, choose an input capacitor with an RMS current rating greater than half of the maximum load current. When selecting ceramic capacitors, it needs to consider the effective value of a capacitor decreasing as the DC bias voltage across a capacitor increasing. The input capacitance value determines the input ripple voltage of the regulator. The input voltage ripple can be calculated using Equation 15 and the maximum input voltage ripple occurs at 50% duty cycle. ∆VIN = IOUT VOUT VOUT ∗ ∗ (1 − ) fSW ∗ CIN VIN VIN (15) For this example, one 10μF, X7R ceramic capacitors rated for 100 V in parallel are used. And a 0.1 μF for highfrequency filtering capacitor is placed as close as possible to the device pins. Bootstrap Capacitor Selection A 0.1μF ceramic capacitor must be connected between BOOT pin and SW pin for proper operation. A ceramic capacitor with X5R or better grade dielectric is recommended. The capacitor should have a 10V or higher voltage rating. Output Capacitor Selection The selection of output capacitor will affect output voltage ripple in steady state and load transient performance. For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A 15 SCT2A23A The output ripple is essentially composed of two parts. One is caused by the inductor current ripple going through the Equivalent Series Resistance ESR of the output capacitors and the other is caused by the inductor current ripple charging and discharging the output capacitors. To achieve small output voltage ripple, choose a low-ESR output capacitor like ceramic capacitor. For ceramic capacitors, the capacitance dominates the output ripple. For simplification, the output voltage ripple can be estimated by Equation 16 desired. ∆VOUT = Where       𝑉𝑂𝑈𝑇 ∗ (𝑉𝐼𝑁 − 𝑉𝑂𝑈𝑇 ) (16) 8 ∗ 𝑓𝑆𝑊 2 ∗ 𝐿 ∗ 𝐶𝑂𝑈𝑇 ∗ 𝑉𝐼𝑁 ΔVOUT is the output voltage ripple fSW is the switching frequency L is the inductance of inductor COUT is the output capacitance VOUT is the output voltage VINis the input voltage Due to capacitor’s degrading under DC bias, the bias voltage can significantly reduce capacitance. Ceramic capacitors can lose most of their capacitance at rated voltage. Therefore, leave margin on the voltage rating to ensure adequate effective capacitance. Typically, two 22μF ceramic output capacitors work for most applications. Table 2 lists typical values of external components for some standard output voltages. Table 2: Component List with Typical Output Voltage BOM list 16 Vout L1 COUT R4 R5 C5 5V 33uH 2*22uF 95K 30K 68pF 12V 68uH 2*22uF 271K 30K 150pF 24V 100uH 2*22uF 576k 30K 220pF For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A SCT2A23A Application Waveforms Vin=48V, Vout=12V, unless otherwise noted Figure 12. Power up (Iload=2A) Figure 13. Power down (Iload=1.2A) Figure 14. Enable toggle Iload=1.2A) Figure 15. Output Hard Short Protection Figure 16. Output Hard Short Release Figure 17. Load Transient (0.3A to 0.9A, 1.6A/us) For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A 17 SCT2A23A Application Waveforms(Continued) Vin=48V, Vout=12V, unless otherwise noted 18 Figure 18. Load Transient 0A to 2.3A (400ms) Figure 19. Output Ripple (Iload=0A, FCCM) Figure 20. Output Ripple (Iload=0A, USM) Figure 21. Output Ripple (Iload=0A, PFM) Figure 22. Output Ripple (Iload=1.2A) Figure 23. Thermal, 48VIN, 12Vout, 1.2A For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A SCT2A23A Typical Application3: Iso-Buck Application C7 22uF D1 R6 0 ohm VOUT2=5V IOUT2=0.5A L1=68uH N =2.1:1 GND C1 10uF SW C2 0.1uF VIN VIN=36~72V R1 100K BST SCT2A23A EN MODE VCC VOUT1=12V IOUT1=0.6A D1 100V C4 0.1uF R4 270K C5 68pF C6 22uF C3 2.2uF VCC FB R3 5K R2 300K R5 30K Figure 24. SCT2A23A Design Example, Iso-BUCK application with 5V isolation Output Design Parameters Design Parameters Example Value Input Voltage 48V Normal, 36V to 72V Output Voltage 12V/5V Maximum Output Current Iout1=0.6A/Iout2=0.5A Voltage drop of VD1 0.7V Inductor /Transformer Turns Ratio (N) L1=68uH /N=2.1:1 Switching Frequency 300 KHz For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A 19 SCT2A23A Design of Iso-BUCK Selection of VOUT and Turns Ratio The primary output voltage in a Iso-Buck converter should be no more than one half of the minimum input voltage. For example, at the minimum VIN of 36 V, the primary output voltage (VOUT1) should be no higher than 18V. The isolated output voltage VOUT2 is set by selecting a transformer with a turns ratio (N1:N2 = NPRI:NSEC). Using this turns ratio, the required primary output voltage VOUT1 is calculated by the following equation: 𝑉𝑜𝑢𝑡1 = 𝑉𝑜𝑢𝑡2 + 𝑉𝑑1 𝑁2/𝑁1 (17) The 0.7 V (Vd1) represents the forward voltage drop of the secondary rectifier diode. By setting the primary output voltage VOUT1 by selecting the correct feedback resistors, the secondary voltage is regulated at VOUT2 nominally. Adjustment of the primary side VOUT1 may be required to compensate for voltage errors due to the leakage inductance of the transformer, the resistance of the transformer windings, the diode drop in the power path on the secondary side. Secondary Rectifier Diode The secondary side rectifier diode must block the maximum input voltage reflected at secondary side switch node. The minimum diode reverse voltage VRD1 rating is given below 𝑉𝑅𝐷1 = (𝑉𝐼𝑁(𝑚𝑎𝑥) − 𝑉𝑜𝑢𝑡1) ∗ 𝑁2 + 𝑉𝑜𝑢𝑡2 𝑁1 (18) A diode with higher reverse voltage rating must be selected in this application. If the input voltage (V IN) has transients above the normal operating maximum input voltage, then the worst-case transient input voltage must be used in calculation while selecting the secondary side rectifier diode. 20 For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A SCT2A23A Iso-Buck Application Waveforms Vin=48V, Vout=12V, Viso=5V, unless otherwise noted Figure 25. Power up(Io=0.6A,Iiso=0.5A) Figure 26. Power down(IO=0.6A,Iiso=0.5A) Figure 27. Steady State(Io=0.6A,Iiso=0.5A) Figure 28. Load Transient 0.3A to 0.9A (isoload) Figure 29. Secondary-Side Short(Io=1.2A) Figure 30. Secondary-Side Short Release (Io=1.2A) For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A 21 SCT2A23A Layout Guideline Proper PCB layout is a critical for SCT2A23A’s stable and efficient operation. The traces conducting fast switching currents or voltages are easy to interact with stray inductance and parasitic capacitance to generate noise and degrade performance. For better results, follow these guidelines as below: 1. Power grounding scheme is very critical because of carrying power, thermal, and glitch/bouncing noise associated with clock frequency. The thumb of rule is to make ground trace lowest impendence and power are distributed evenly on PCB. Sufficiently placing ground area will optimize thermal and not causing over heat area. 2. Place a low ESR ceramic capacitor as close to VIN pin and the ground as possible to reduce parasitic effect. 3. For operation at full rated load, the top side ground area must provide adequate heat dissipating area. Make sure top switching loop with power have lower impendence of grounding. 4. The bottom layer is a large ground plane connected to the ground plane on top layer by vias. The power pad should be connected to bottom PCB ground planes using multiple vias directly under the IC. The center thermal pad should always be soldered to the board for mechanical strength and reliability, using multiple thermal vias underneath the thermal pad. Improper soldering thermal pad to ground plate on PCB will cause SW higher ringing and overshoot besides downgrading thermal performance. It is recommended 8mil diameter drill holes of thermal vias, but a smaller via offers less risk of solder volume loss. On applications where solder volume loss thru the vias is of concern, plugging or tenting can be used to achieve a repeatable process. 5. Output inductor should be placed close to the SW pin. The area of the PCB conductor minimized to prevent excessive capacitive coupling. 6. UVLO adjust, VCC capacitor and feedback components should connect to small signal ground which must return to the GND pin without any interleaving with power ground. 7. For achieving better thermal performance, a four-layer layout is strongly recommended. VOUT Inductor Output capacitors GND Top layer ground area 1 Input bypass capacitor VIN GND SW VIN BST BST Capacitor Programmable UVLO resistors VCC EN Thermal VIA MODE GND 22 FB Via Via Feedback resistors Top layer ground area For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A SCT2A23A PACKAGE INFORMATION ESOP8/PP(95x130) Package Outline Dimensions Symbol A A1 A2 b c D D1 E E1 E2 e L  Dimensions in Millimeters Min. Max. 1.300 1.700 0.000 0.100 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 3.050 3.250 3.800 4.000 5.800 6.200 2.160 2.360 1.270(BSC) Dimensions in Inches Min. Max. 0.051 0.067 0.000 0.004 0.053 0.061 0.013 0.020 0.007 0.010 0.185 0.201 0.120 0.128 0.150 0.157 0.228 0.244 0.085 0.093 0.050(BSC) 0.400 0° 0.016 0° 1.270 8° 0.050 8° NOTE: 1. 2. 3. 4. 5. 6. Drawing proposed to be made a JEDEC package outline MO-220 variation. Drawing not to scale. All linear dimensions are in millimeters. Thermal pad shall be soldered on the board. Dimensions of exposed pad on bottom of package do not include mold flash. Contact PCB board fabrication for minimum solder mask web tolerances between the pins. For more information www.silicontent.com © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A 23 SCT2A23A TAPE AND REEL INFORMATION Orderable Device SCT2A23ASTER 24 Package Type ESOP For more information www.silicontent.com Pins 8 © 2020 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A23A SPQ 4000
SCT2A23ASTER 价格&库存

很抱歉,暂时无法提供与“SCT2A23ASTER”相匹配的价格&库存,您可以联系我们找货

免费人工找货