SM2363PSAC-TRG

SM2363PSA ® P-Channel Enhancement Mode MOSFET Features · Pin Description -60V/-1.8A, D RDS(ON)= 225mW(max.) @ VGS=-10V RDS(ON)= 300mW(max.) @ VGS=-4.5V · · · · S ESD Protection G 100% UIS+Rg Tested Top View of SOT-23 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) Applications · · G Power Management in DC/DC Converter. Load switch. S P-Channel MOSFET Ordering and Marking Information Package Code A : SOT-23 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM2363PS Assembly Material Handling Code Temperature Range Package Code SM2363PS A : XX - Lot Code B63XX Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2015 1 www.sinopowersemi.com SM2363PSA ® Absolute Maximum Ratings Symbol (TA = 25°C Unless Otherwise Noted) Parameter Rating Unit Common Ratings V DSS Drain-Source Voltage -60 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 TJ TSTG Storage Temperature Range IS Diode Continuous Forward Current ID * Continuous Drain Current IDM a PD Pulsed Drain Current Maximum Power Dissipation R qJA c IAS b EAS -55 to 150 b Thermal Resistance-Junction to Ambient TA=25°C -1 TA=25°C -1.8 TA=70°C -1.5 TA=25°C -7.2 TA=25°C 1.56 TA=70°C 1 t £ 10s 80 Steady State 125 V °C A A A W °C/W Avalanche Current, Single pulse L=0.5mH 6 A Avalanche Energy, Single pulse L=0.5mH 9 mJ Note *：t £ 10s. Note a：Pulse width is limited by maximum junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25 oC). Note c：Surface Mounted on 1in2 pad area. Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2015 2 www.sinopowersemi.com SM2363PSA ® Electrical Characteristics Symbol Parameter (TA = 25°C Unless Otherwise Noted) Test Conditions Min. Typ. Max. Unit V GS=0V, I DS=250mA -60 - - V V DS=-48V, VGS=0V - - 1 - - 30 Static Characteristics BV DSS Drain-Source Breakdown Voltage I DSS Zero Gate Voltage Drain Current VGS(th) I GSS TJ =85°C mA Gate Threshold Voltage V DS=V GS, IDS=250mA -1 -2 -3 V Gate Leakage Current V GS=±20V, VDS=0V - - ±10 uA V GS=-10V, I DS= -1.8A - 180 225 mW V GS=-4.5V, IDS = -1.4A - 220 300 mW RDS(ON) d Drain-Source On-state Resistance Diode Characteristics VSD d Diode Forward Voltage I SD =-1A, VGS=0V -0.5 -0.8 -1 V trr Reverse Recovery Time - 20 - ns Qrr Reverse Recovery Charge I SD =-1.8A, dlSD /dt=100A/ms - 20 - nC V GS=0V,VDS=0V,f=1MHz - 7 - W - 290 380 - 31 - - 17 - - 7 13 - 5 9 - 17 31 - 8 15 - 3.5 - - 7.2 10 - 1.3 - - 1.4 - Dynamic Characteristics d RG Gate Resistance C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(O N) Turn-on Delay Time tr Turn-on Rise Time t d(OFF) Turn-off Delay Time tf V GS=0V, V DS=-30V, Frequency=1.0MHz V DD =-30V, RL =-30W, I DS=-1A, VGEN =-10V, R G=6W Turn-off Fall Time Gate Charge Characteristics pF ns e Qg Total Gate Charge Qg Total Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge V DS=-30V, VGS=-4.5V, I DS=-1.8A V DS=-30V, VGS=-10V, I DS=-1.8A nC Note d：Pulse test; pulse width£300ms, duty cycle£2%. Note e：Guaranteed by design, not subject to production testing. Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2015 3 www.sinopowersemi.com SM2363PSA ® Typical Operating Characteristics Power Dissipation Drain Current 1.8 2.0 1.6 -ID - Drain Current (A) Ptot - Power (W) 1.5 1.2 0.9 0.6 1.2 0.8 0.4 0.3 o 0.0 o TA=25 C 0 20 40 60 80 0.0 100 120 140 160 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 2 10 n) (o s Rd Normalized Transient Thermal Resistance 30 -ID - Drain Current (A) T A=25 C,VG=-10V it Lim 1 300ms 1ms 10ms 0.1 100ms 0.01 1s DC o TA=25 C 1E-3 0.1 1 10 100 300 -VDS - Drain - Source Voltage (V) Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2015 Duty = 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 0.01 Single Pulse 2 Mounted on 1in pad 1E-3 1E-4 1E-3 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) 4 www.sinopowersemi.com SM2363PSA ® Typical Operating Characteristics (Cont.) Output Characteristics 8 Drain-Source On Resistance 400 VGS=-4.5,-5,-6,-7, -8,-9,-10V -4V 350 RDS(ON) - On - Resistance (mW) 7 -ID - Drain Current (A) 6 5 -3.5V 4 3 2 -3V 1 0 0.0 -2.5V 0.5 1.0 1.5 2.0 2.5 VGS=-4.5V 200 VGS=-10V 150 100 50 3.0 0 1 2 3 4 5 6 -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.6 IDS=-1.8A 7 IDS = -250mA 1.4 1000 Normalized Threshold Voltage RDS(ON) - On Resistance (mW) 250 -VDS - Drain-Source Voltage (V) 1200 800 600 400 200 0 300 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 -50 -25 10 -VGS - Gate - Source Voltage (V) Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2015 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.sinopowersemi.com SM2363PSA ® Typical Operating Characteristics (Cont.) Drain-Source On Resistance 2.5 Source-Drain Diode Forward 8 VGS = -10V 2.0 -IS - Source Current (A) Normalized On Resistance IDS = -1.8A 1.5 1.0 o T j=150 C 1 o T j=25 C 0.5 o 0.0 -50 RON@T j=25 C: 180m W -25 0 25 50 75 0.1 0.0 100 125 150 0.8 1.0 1.2 Capacitance Gate Charge VDS= -30V 9 -VGS - Gate - source Voltage (V) 300 Ciss 250 200 150 100 50 Coss 10 15 20 IDS= -1.8A 8 7 6 5 4 3 2 1 Crss 5 1.4 10 350 C - Capacitance (pF) 0.6 -VSD - Source - Drain Voltage (V) Frequency=1MHz 0 0.4 Tj - Junction Temperature (°C) 400 0 0.2 25 30 35 0 40 -VDS - Drain - Source Voltage (V) Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2015 0 1 2 3 4 5 6 7 8 QG - Gate Charge (nC) 6 www.sinopowersemi.com SM2363PSA ® Avalanche Test Circuit and Waveforms VDS tAV L DUT EAS VDD RG VDD IAS tp IL VDS 0.01W tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDS RD td(on) tr DUT RG td(off) tf VGS 10% VGS VDD tp 90% VDS Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2015 7 www.sinopowersemi.com SM2363PSA ® Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2015 8 www.sinopowersemi.com SM2363PSA ® Classification Profile Copyright ã Sinopower Semiconductor, Inc. Rev. A.1 - November, 2015 9 www.sinopowersemi.com SM2363PSA ® Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Package Thickness