AS3D020120P2

AS3D02 01 2 0P2 1200V,20A Silicon Carbide Schottky Diode Features  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Positive Temperature Coefficient on VF  Temperature-independent Switching  175°C Operating Junction Temperature VRRM = IF ( TC≤135℃) = QC = 1200 V 26 A** 58 nC** *Per Leg, **Per Device Package Benefits  Replace Bipolar with Unipolar Device  Reduction of Heat Sink Size  Parallel Devices Without Thermal Runaway  Essentially No Switching Losses 1 2 3 TO-247-3 Applications  Switch Mode Power Supplies  Power Factor Correction  Motor drive, PV Inverter, Wind Power Station Part Number Package Marking AS3D020120P2 TO-247-3 ASD20120P2 http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Page 1 Document ID Issued Date AS-3243021 2022/05/10 Revised Date - Revision Page. A 5 AS3D02 01 2 0P2 1200V,20A Silicon Carbide Schottky Diode Maximum Ratings Symbol Parameter Value Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 1200 V TC = 25℃ VRSM Surge Peak Reverse Voltage 1200 V TC = 25℃ VR DC Blocking Voltage 1200 V TC = 25℃ IF Forward Current (Per leg/Device) 30/60 13/26 10/20 A Note TC ≤ 25℃ TC ≤ 135℃ TC ≤ 149℃ IFSM Non-Repetitive Forward Surge Current 95* A TC = 25℃, tp = 8.3ms, Half Sine Wave Ptot Power Dissipation (Per leg/Device) 150/ 300 W TC = 25℃ TC Maximum Case Temperature 149 ℃ -55 to 175 ℃ 1 Nm TJ, TSTG Operating Junction and Storage Temperature TO-247 Mounting Torque Fig.3 M3 Screw Electrical Characteristics Symbol Parameter VF Forward Voltage IR Reverse Current Typ. Max. 1.55 1.8 2.2 2.5 2 20 10 200 Unit V µA 650 C Total Capacitance 49 Total Capacitive Charge 29 Note IF = 10A, TJ = 25℃ Fig.1 IF = 10A, TJ = 175℃ VR = 1200V, TJ = 25℃ Fig.2 VR = 1200V, TJ = 175℃ VR = 0V, TJ = 25℃, f = 1MHz / pF 40 QC Test Conditions VR = 400V, TJ = 25℃, f = 1MHz Fig.5 VR = 800V, TJ = 25℃, f = 1MHz / nC VR = 800V, IF = 10A Fig.4 di/dt = 200A/µs, TJ = 25℃ Thermal Characteristics Symbol Parameter Typ. Unit Note 1* 0.5** ℃/W Fig.6 RθJC Thermal Resistance from Junction to Case RθJA Thermal Resistance from Junction to Ambient 80 ℃/W Tsold Soldering Temperature 260 ℃ *Per Leg, **Per Device http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Page 2 Document ID Issued Date AS-3243021 2022/05/10 Revised Date - Revision Page. A 5 AS3D02 01 2 0P2 1200V,20A Silicon Carbide Schottky Diode IF (A) IR (μA) Typical Performance (Per Leg) VF (V) VR (V) Figure 1. Forward Characteristics QC (nC) PTot (W) Figure 2. Reverse Characteristics TC (℃) VR (V) Figure 3. Power Derating http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Figure 4. Total Capacitive Charge vs. Reverse Voltage Page 3 Document ID Issued Date AS-3243021 2022/05/10 Revised Date - Revision Page. A 5 AS3D02 01 2 0P2 1200V,20A Silicon Carbide Schottky Diode C (pF) Thermal Resistance（℃/W） Typical Performance (Per Leg) VR (V) T(sec) Figure 5. Total Capacitance vs. Reverse Voltage http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Page 4 Figure 6. Transient Thermal Impedance Document ID Issued Date AS-3243021 2022/05/10 Revised Date - Revision Page. A 5 AS3D02 01 2 0P2 1200V,20A Silicon Carbide Schottky Diode Package Dimensions Package TO-247-3 A C D B G H F E http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Symbol Min. (mm) Typ. (mm) Max. (mm) A 14.18 15.75 17.33 B 18.45 20.5 22.55 C 4.50 5.00 5.50 D 3.15 3.50 3.85 E 1.08 1.20 1.32 F 18.27 20.30 22.33 G 4.21 4.68 5.15 H 4.91 5.46 6.01 Page 5 Document ID Issued Date AS-3243021 2022/05/10 Revised Date - Revision Page. A 5