PGAD1S03H

Datasheet Photon Detection PGAD1S03H – 905 nm Pulsed Semiconductor Laser in SMD Package High Power Laser-Diode Family for LiDAR and Range Finding Excelitas’ PGAD1S03H is a standard 905 nm laser chip of the PGA series with one emitting stripe, packaged in an Excelitas leadless laminate carrier (LLC) package. Key Features  Small emission size for easy optical coupling  Single Stripe 75 µm active laser length  Side and top looking mount possibility  Concentrated emitting source size for high power into aperture  Quantum well structure  Excellent power stability with temperature  RoHS compliant Applications  LiDAR / ToF measurements  Laser range finding  Laser scanning / UGV  Infrared night illumination  Laser therapy  Material excitation in medical and other analytical applications All specifications are valid for TA = 23 °C, pw = 100 ns, prr = 1 kHz and iF = 10 A, unless otherwise specified. Table 1: Key parameters Parameter Peak Optical Power Wavelength Operating Temperature1 Symbol P C Top Min 7 895 -40 Typ 8 905 Max 925 85 Unit W nm °C Note 1: Extended temperature range specification available. Please contact Excelitas Technologies for more information. www.excelitas.com PGAD1S03H-Rev. 2021.09 Page 1 of 9 PGAD1S03H – 905 nm Pulsed Semiconductor Laser in SMD Package High-Power Laser Diode Family for LiDAR and Range Finding Table 2: Absolute Ratings Parameter Symbol Minimum Maximum Units Peak Reverse Voltage VRM 2 V Pulse Duration tW 100 ns Duty Factor du 0.1 % Storage Temperature TS -40 105 °C °C Soldering Temperature3 TP 250 Note 1: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Note 2: Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note 3: For detailed reflow information, refer to Table 6 Table 3: Chip and Nearfield Specifications The specifications in Table 3 indicate the optical emission characteristics of the PGAD1S03H. Due to current spreading inside the laser junction the emission size of the Near Field is depending on the drive current and will be larger than the active area of the chip. To ease the optical coupling into the final system, the Emitting Width and Height are defined as FWHM of the Near Field Size. Parameter Number of stripes Emitting width Emitting height Symbol S w h Minimum Typical 1 89 1 Maximum Units µm µm Table 4: Emission Specifications Parameter Spectral Width (FWHM) Wavelength Temperature Coefficient Divergence Parallel to Junction Plane Divergence Perpendicular to Junction Plane www.excelitas.com Symbol  T θ|| θ| Page 2 of 9 Minimum Typical 10 0.25 7.5 25 Maximum Units nm nm / °C degrees degrees PGAD1S03H-Rev. 2021.09 PGAD1S03H – 905 nm Pulsed Semiconductor Laser in SMD Package High-Power Laser Diode Family for LiDAR and Range Finding Table 5: Electrical Specifications Parameter Forward Voltage1 Drive Current Threshold Current Series Resistance Bandgap Voltage Drop Symbol Minimum VF iF iTh Rs Vg Typical 2.5 10 0.5 0.11 1.4 Maximum Units V A A Ω V Note 1: As estimated by 𝑉 = 𝑅 𝑖 + 𝑉 . Figure 1: Package Mechanical Dimension www.excelitas.com Page 3 of 9 PGAD1S03H-Rev. 2021.09 PGAD1S03H – 905 nm Pulsed Semiconductor Laser in SMD Package High-Power Laser Diode Family for LiDAR and Range Finding 1.0 8 6 4 2 8 10 895 900 905 910 915 Wavelength [nm] Figure 5: Typical P vs. Tj Peak Output Power [%] 4 6 Current [A] Figure 4: Typical λ vs. Tj 920 910 900 890 0 40 80 Junc on Temperature [°C] Figure 6: Typical θ| 105 100 95 90 85 80 -20 0 20 40 60 80 Junc on Temperature [°C] Figure 7: Typical θ|| 1.0 Intensity [AU] 1.0 Intensity [AU] 0.5 0.0 2 Wavelength [nm] Figure 3: Typical Emission Spectrum Intensity [AU] Peak Output Power [W] Figure 2: Typical P vs. iF 0.5 -40 -20 0 20 40 Perpendicular Angle [°] www.excelitas.com 0.5 -20 Page 4 of 9 -10 0 10 Parallel Angle [°] 20 PGAD1S03H-Rev. 2021.09 PGAD1S03H – 905 nm Pulsed Semiconductor Laser in SMD Package High-Power Laser Diode Family for LiDAR and Range Finding Information: Excelitas Technologies’ PGAD1S03H semiconductor pulsed laser diode in SMD package, emitting at 905 nm in the near IR, uses a multi-layer monolithic chip design. Its improved structure of GaAs substrate is offering 8 W pulsed peak power when driven at 10 A. The multi-layer chip design features an active laser size of (75 x 1) µm by emission of one laser line, offering high output power out of a small aperture. The laser chips are fabricated by using metal organic chemical vapor deposition (MOCVD). The Excelitas LLC epoxy encapsulated package complements Excelitas’ PGA series epi-cavity lasers in hermetic metal or T1¾ (TO-like) plastic packages and are ideally suited for high volume applications. The beam propagation possesses a 25° divergence in the direction perpendicular to the chip surface and 7.5° divergence parallel to the chip surface. The output power shows an excellent stability over the full MIL specification temperature range. Our quantum well laser design offers rise and fall times of