A94

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 A94 TRANSISTOR (PNP) 1.EMITTER 2.BASE FEATURES z High Breakdown Voltage 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current&RQWLQXRXV A IC0 Collector Current3XOVHG -0 A PC Collector Power Dissipation 625 mW Thermal Resistance Irom Junction Wo $mbient 200  ℃/W RθJA TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA,IE=0 -400 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -400 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -5 V Collector cut-off current ICBO VCB=-400V,IE=0 -0.1 μA Collector cut-off current ICEO VCE=-400V,IB=0 -5 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 μA hFE(1) VCE=-10V, IC=-10mA 80 hFE(2) VCE=-10V, IC=-1mA 70 hFE(3) VCE=-10V, IC=-100mA 60 hFE(4) VCE=-10V, IC=-50mA 80 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat)(1) IC=-10mA,IB=-1mA -0.2 V VCE(sat)(2) IC=-50mA,IB=-5mA -0.3 V VBE(sat) IC=-10mA,IB=-1mA -0.75 V fT Transition frequency 300 VCE=-20V, IC=-10mA,f=30MHz 50 MHz CLASSIFICATION OF hFE(1) RANK A B1 B2 C RANGE 80-100 100-150 150-200 200-300 C,May,2012 Typical Characteristics IC -18 18 COMMON EMITTER VCE= -10V -70uA 70uA -60uA 60uA -10 10 Ta=100℃ hFE -80uA 80uA -50uA 50uA -8 8 -40uA 40uA -6 6 -30uA 30uA -4 4 Ta=25℃ 100 -20uA 20uA -2 2 IB=-10uA -0 0 10 -0 -2 -4 -6 -8 -10 -12 -14 -16 COLLECTOR-EMITTER VOLTAGE —— -18 -20 -22 -10 -100 COLLECTOR CURRENT IC VBEsat —— -1000 -1 Ta=100 ℃ -0.1 -1 VCE (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat -10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) IC COMMON EMITTER Ta=25℃ DC CURRENT GAIN (mA) IC -12 12 IC -200 (mA) IC Ta=25℃ -500 Ta=100 ℃ Ta=25℃ β=10 -0.01 -1 -10 -100 COLLECTOR CURRENT IC —— IC β=10 -200 -200 -1 -10 (mA) -100 COLLECTOR CURRENT VBE fT 100 -200 —— IC -200 (mA) IC 50 TRANSITION FREQUENCY -10 T =2 5℃ a T =1 00℃ a IC fT (mA) (MHz) -100 COMMON EMITTER VCE=-10V COMMON EMITTER VCE= -20V Ta=25℃ 10 -1 -0 -300 -600 -900 -1200 -10 -5 BASE-EMMITER VOLTAGE VBE (mV) 300 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) CT Cob 10 1 -0.1 —— IC (mA) Ta 600 Ta=25 ℃ Cib PC 700 (pF) 100 -100 COLLECTOR CURRENT f=1MHz IE=0/IC=0 CAPACITANCE —— -90uA 90uA -14 14 COLLECTOR CURRENT hFE 1000 -100uA 100uA -16 16 COLLECTOR CURRENT VCE —— A94 500 400 300 200 100 0 -1 REVERSE VOLTAGE -10 V (V) -20 0 25 50 75 100 AMBIENT TEMPERATURE 125 Ta 150 (℃ ) C,May,2012