SMD2N65

SMD2N65 650V N-Channnel MOSFET ●Features： ■ 2.0A, 650V, RDS(on)(Typ) =4.5Ω@VGS=10V ■ Low Gate Charge ■ Low Crss ■ 100% Avalanche Tested ■ Fast Switching ■ Improved dv/dt Capability ●Application: ■ High Frequency Switching Mode Power Supply ■ Active Power Factor Correction Absolute Maximum Ratings(Tc=25C unless otherwise noted) Symbol Parameter VDSS ID IDM Value Unit Drain-Source Voltage 650 V Drain Current 2.0* A 1.3* A 8* A ±30 V - Continuous(Tc=25C) - Continuous(Tc=100C) Drain Current -Pulsed (Note1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 120 mJ IAR Avalanche Current (Note1) 2.0 A EAR Repetitive Avalanche Energy (Note1) 4.4 mJ Peak Diode Recovery dv/dt (Note3) 4.5 V/ns dv/dt PD Power Dissipation(TC =25C) -Derate above 25°C 44 W 0.35 W/C Tj Operating Junction Temperature 150 C -55 to+150 C Max Unit Tstg Storage Temperature Range * Drain Current Limited by Maximum Junction Temperature. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance,Junction to Case 2.87 C /W RθJA Thermal Resistance,Junction to Ambient 110 C /W HUAKE semiconductors 2017.08 1/5 编号：HK-WI-TD-005 版本/版次：B/0 SMD2N65 650V N-Channnel MOSFET Electrical Characteristics(Tc=25C unless otherwise noted) Symbol Parameter Test Conditons Off Characteristics BVDSS Drain-source Breakdown Voltage VGS=0V ,ID=250μA △BVDSS /△TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current Gate-Body Leakage Current,Forward IGSSF Gate-Body Leakage Current,Reverse IGSSR On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance gFS Forward Transconductance ID=250μA (Referenced to 25C) VDS=650V,VGS=0V VDS=520V,Tc=125C VGS=+30V, VDS=0V VGS=-30V, VDS=0V VDS= VGS, ID=250μA VGS=10 V, ID=1.0A VDS=40 V, ID=1.0A (Note4) Dynamic Characteristics Input Capacitance Ciss VDS=25V,VGS=0V, Output Capacitance Coss f=1.0MHz Reverse Transfer Capacitance Crss Switching Characteristics Turn-On Delay Time td(on) Turn-On Rise Time tr VDD = 325 V, ID = 2.0 A, RG = 25 Ω (Note4,5) Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg VDS = 520 V, ID =2.0 A, Gate-Source Charge Qgs VGS = 10 V (Note4,5) Gate-Drain Charge Qgd Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current IS Maximum Pulsed Drain-Source Diode Forward Current ISM Drain-Source Diode Forward Voltage VGS =0V,IS=2.0A VSD Reverse Recovery Time trr VGS =0V, IS=2.0A, d IF /dt=100A/μs (Note4) Reverse Recovery Charge Qrr Min Typ Max Unit 650 -- -- V -- 0.65 -- V/C ----- ----- 1 10 100 -100 μA μA nA nA 2.0 -- -4.5 4.0 5.0 V Ω -- 1.9 -- S ---- 270 40 5 ---- pF pF pF -------- 7 23 2 24 9 1.6 4.3 -------- ns ns ns ns nC nC nC ------ ---230 1.0 2.0 8 1.4 --- A A V ns μC Notes: 1、Repetitive Rating:Pulse Width Limited by Maximum Junction Temperature. 2、L = 56.0mH, IAS =2.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25C. 3、ISD≤2.0A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25C. 4、Pulse Test : Pulse Width ≤300 µ s, Duty Cycle≤2%. 5、Essentially Independent of Operating Temperature. HUAKE semiconductors 2017.08 2/5 编号：HK-WI-TD-005 版本/版次：B/0 SMD2N65 650V N-Channnel MOSFET On-Regin Characteristics On-Resistance Variation vs. Drain Current and Gate Voltage Transfer Characteristics Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance Characteristics HUAKE semiconductors 2017.08 Gate Charge Characteristics 3/5 编号：HK-WI-TD-005 版本/版次：B/0 SMD2N65 650V N-Channnel MOSFET Breakdown Voltage Variation vs. Temperature On-Resistance Variation vs. Temperature Maximum Drain Current Vs. Case Temperature Maximum Safe Operating Area HUAKE semiconductors 2017.08 4/5 编号：HK-WI-TD-005 版本/版次：B/0 SMD2N65 650V N-Channnel MOSFET TO-252 Package Dimensions SYMBOL A A1 A2 A3 A4 A5 B B1 C min 6.40 5.20 4.40 4.40 0 4.65 5.90 1.57 0.90 HUAKE semiconductors nom 2017.08 max 6.60 5.40 4.60 4.60 0.15 4.95 6.20 1.77 0.96 SYMBOL D D1 D2 e E F G L θ（度） 5/5 min 2.90 0.45 0.45 2.20 0.45 1.40 0 nom 2.30 1.70 UNIT：mm max 3.10 0.55 0.55 2.40 0.55 1.60 10.00 编号：HK-WI-TD-005 版本/版次：B/0