WMO50N06TS

WMO50N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMO50N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. Features  VDS = 60V, ID = 50A  RDS(on) < 16mΩ @ VGS = 10V S G TO-252 RDS(on) < 20mΩ @ VGS = 4.5V  Green Device Available  100% EAS Guaranteed  Optimized for High Speed Smooth Switching RoHS D compliant G Applications  Synchronous Rectification  DC/DC Converter S Absolute Maximum Ratings（TA = 25°C, unless otherwise noted） Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V TC=25°C 50 ID Continuous Drain Current TC=100°C A 31.6 IDM 200 A EAS 96.8 mJ PD 69.4 W TJ , TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 48 °C/W Thermal Resistance from Junction-to-Case RθJc 1.8 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.2.0, 2021 Doc:W0803559 1/7 WMO50N06TS Electrical Characteristics（TJ = 25°C, unless otherwise noted） Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Characteristics Drain-Source Breakdown Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current TJ=25°C TJ=100°C V(BR)DSS VGS = 0V, ID = 250µA 60 - - V lGSS VDS = 0V, VGS = ±20V - - ±100 nA IDSS VDS = 60V, VGS = 0V - - 1 - - 100 1.2 1.9 2.5 VGS = 10V, ID = 20A - 12.5 16 VGS = 4.5V, ID = 5A - 16 20 VDS = 10V, ID = 20A - 36 - - 2690 - - 120 - - 98 - - 0.6 - - 46 - - 8.5 - Gate-Threshold Voltage VGS(th) Drain-Source on-Resistance4 RDS(on) Forward Transconductance4 gfs VDS = VGS, ID = 250µA μA V mΩ S Dynamic Characteristics5 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance RG VDS = 30V, VGS =0V, f =1MHz f =1MHz pF Ω Switching Characteristics5 Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 7.5 - Turn-on Delay Time td(on) - 10.5 - - 21.2 - - 35 - - 13 - - 38 - ns - 72 - nC - - 1.2 V - - 50 A tr Rise Time td(off) Turn-off Delay Time Fall Time tf Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr VGS = 10V, VDD = 30V, ID= 20A VGS =10V, VDD = 30V, RG = 3Ω, ID= 20A IF=20A, dlF/dt=100A/μs nC ns Drain-Source Body Diode Characteristics VSD Diode Forward Voltage4 Continuous Source Current TC=25°C IS = 20A, VGS = 0V IS - Notes: 1. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. 2. The EAS data shows Max. rating . The test condition is VDD=25V, VGS=10V, L=0.4mH, IAS=22A 3. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, The value in any given application depends on the user's specific board design. 4. The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%. 5. This value is guaranteed by design hence it is not included in the production test. Rev.2.0, 2021 www.way-on.com 2/7 WMO50N06TS Typical Characteristics 50 VDS= 5V VGS = 4.5V VGS = 4V 40 VGS = 3.5V Drain current ID (A) 40 Drain current ID (A) 50 VGS = 10V VGS = 7V 30 20 VGS = 3V 10 30 20 10 VGS = 2.5V 0 0 1 2 3 4 Drain−source voltage VDS (V) 0 5 1 0 Figure 1. Output Characteristics 2 3 Gate−source voltage VGS (V) 4 Figure 2. Transfer Characteristics On-Resistance RDS (on) (mΩ) Source current IS (A) 80 10 1 0.1 0.2 0.4 0.6 0.8 1.0 40 20 0 1.2 ID= 20A 60 Source−drain voltage VSD (V) 3 0 9 12 15 Figure 4. RDS(ON) vs. VGS 30 2.5 25 2.0 Normalized RDS (on) On-Resistance RDS (on) (mΩ) 6 Gate−source voltage VGS (V) Figure 3. Forward Characteristics of Reverse 20 VGS = 4.5V 15 VGS = 10V 10 1.5 1.0 0.5 5 0 5 0.0 0 5 10 15 20 25 30 -50 -25 Drain current ID (A) Figure 5. RDS(ON) vs. ID Rev.2.0, 2021 0 25 50 75 100 125 150 Temperature Tj(°C) Figure 6. Normalized RDS(on) vs. Temperature www.way-on.com 3/7 WMO50N06TS 100000 Capacitance（pF） 10000 Ciss 1000 Coss 100 Crss 10 F=1.0MHz 1 0 10 20 30 40 Drain-source voltage VDS（V） 50 60 Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics 80 60 Drain current ID (A) Power Dissipation PD(W) 100 40 20 0 25 0 50 75 100 125 Ambient Temperature Ta (°C) 150 10μs 100μs 10 Limited by RDS(on) 1 0.1 0.01 1ms DC 10ms Single Pulse TC=25℃ TJ=150℃ 0.1 Figure 9. Power Dissipation 1 10 100 1000 Drain−source voltage VDS (V) Figure10. Safe Operating Area Normalized RθJC ℃/W) 10 1 0.1 Duty = 1.0 Duty = 0.5 Duty = 0.2 Duty = 0.1 Duty = 0.05 Duty = 0.02 0.01 Duty = 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, Pulse Width(S) Figure 11. Normalized Maximum Transient Thermal Impedance Rev.2.0, 2021 www.way-on.com 4/7 WMO50N06TS Test Circuit VGS Qg RL VDS VGS Qgs Qgd DUT IG=const Figure A. Gate Charge Test Circuit & Waveforms RL VDS RG VDD VGS DUT VGS Figure B. Switching Test Circuit & Waveforms L VDS ID RG VDD DUT VGS tp Figure C. Unclamped Inductive Switching Circuit & Waveforms Rev.2.0, 2021 www.way-on.com 5/7 WMO50N06TS Mechanical Dimensions for TO-252 COMMON DIMENSIONS SYMBOL A B D C H L G MIN MAX A 6.40 6.80 B 5.13 5.50 C 0.88 1.28 D 5.90 6.22 E 0.68 1.10 F 0.68 0.91 K E F I J MM G 2.29REF H 2.90REF I 0.85 J Rev.2.0, 2021 www.way-on.com 1.17 0.51REF K 2.10 2.50 L 0.40 1.00 6/7 WMO50N06TS Ordering Information Part Package Marking Packing method WMO50N06TS TO-252 WMO50N06TS Tape and Reel Marking Information Wayon WMO50N06TS WWXX XXX WMO50N06TS = Device code WWXX XXX= Date code Contact Information No.1001, Shiwan(7) Road, Pudong District, Shanghai, P.R.China.201207 Tel: 86-21-50310888 Fax: 86-21-50757680 Email: market@way-on.com WAYON website: http://www.way-on.com For additional information, please contact your local Sales Representative. ® is registered trademarks of Wayon Corporation. Disclaimer WAYON reserves the right to make changes without further notice to any Products herein to improve reliability, function, or design. The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. WAYON does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Products or technical information described in this document. Rev.2.0, 2021 www.way-on.com 7/7