ASDM60N45KQ-R

ASDM60N45KQ 60V N-Channel MOSFET Product Summary General Features ● High density cell design for ultra low Rdson 60 V R DS(on),Typ@ VGS=10 V 12 mΩ ID 45 A V ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation DS ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible Power Supply Schematic diagram TO-252-2L top view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V ID 45 A 35 A Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current I DM 180 A Maximum Power Dissipation PD 80 W 0.53 W/ ℃ EAS 115 mJ TJ,TSTG -55 To 175 ℃ Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range 2.4 62 NOV 2018 Version1.0 1/8 Ascend Semicondutor Co.,Ltd ASDM60N45KQ 60V N-Channel MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA VGS(th) VDS=VGS,ID=250μA 1.0 1.5 2.5 V VGS=10V, ID=20A - 12 15 mΩ VGS=4.5V, ID=20A - 14 17 mΩ VDS=25V,ID=20A 24 - - S - 1920 - PF - 221 - PF - 70 - PF - 25 - nS Off Characteristics On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics RDS(ON) gFS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=25V,VGS=0V, F=1.0MHz Crss (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=30V,ID=2A,RL=15Ω - 5 - nS td(off) VGS=10V,RG=2.5Ω - 50 - nS - 6 - nS - 30 nC - 10 nC - 5 nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=30V,ID=50A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) VSD VGS=0V,IS=40A IS - 1.2 V - - 45 A trr TJ = 25°C, IF = 40A - 50 - nS Reverse Recovery Charge Qrr di/dt = 100A/μs(Note3) - 100 - nC Forward Turn-On Time ton Reverse Recovery Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition:Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω NOV 2018 Version1.0 2/8 Ascend Semicondutor Co.,Ltd ASDM60N45KQ 60V N-Channel MOSFET ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-Junction Temperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current NOV 2018 Version1.0 Figure 6 Source- Drain Diode Forward 3/8 Ascend Semicondutor Co.,Ltd ASDM60N45KQ C Capacitance (pF) 60V N-Channel MOSFET TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance NOV 2018 Version1.0 4/8 Ascend Semicondutor Co.,Ltd ASDM60N45KQ 60V N-Channel MOSFET Test Circuit 1) EAS Test Circuit 2) Gate Charge Test Circuit 3) Switch Time Test Circuit NOV 2018 Version1.0 5/8 Ascend Semicondutor Co.,Ltd ASDM60N45KQ 60V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM60N45KQ-R 60N45 TO-252 Tape&Reel 2500/Reel MARKING PACKAGE 60N45 TO-252 NOV 2018 Version1.0 6/8 Ascend Semicondutor Co.,Ltd ASDM60N45KQ 60V N-Channel MOSFET TO-252 NOV 2018 Version1.0 7/8 Ascend Semicondutor Co.,Ltd ASDM60N45KQ 60V N-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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