HSSN3139

HSSN3139 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSSN3139 is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSSN3139 meet the RoHS and Green Product requirement with full function reliability approved. ⚫ ⚫ ⚫ ⚫ Super Low Gate Charge Low Threshold High-Side Switching Advanced high cell density Trench technology VDS -20 V RDS(ON),Max 630 mΩ ID -0.5 A SOT 323 Pin Configurations D G S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±8 V ID@TA=25℃ Continuous Drain Current, VGS @ -4.5V1 -0.5 A IDM Pulsed Drain Current2 -2 A PD@TA=25℃ Total Power Dissipation3 0.35 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient 1 www.hs-semi.cn Ver 2.0 Typ. Max. Unit --- 357 ℃/W 1 HSSN3139 P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃ VGS=-4.5V , ID=-0.5A --- 560 630 VGS=-2.5V , ID=-0.3A --- 790 900 -0.5 -0.67 -1.1 V --- 3.95 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=±10V , VDS=0V --- --- ±20 --- 1 --- --- 0.2 VGS=VDS , ID =-250uA IGSS Gate-Source Leakage Current Qg Total Gate Charge (-4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 0.26 Turn-On Delay Time --- 9 --- Td(on) VDS=-10V , VGS=-2.5V , ID=-0.5A m uA nA nC Rise Time VDD=-10V , VGS=-4.5V , RG=1, --- 10 --- Turn-Off Delay Time ID=-0.5A --- 10 --- Fall Time --- 8 --- Ciss Input Capacitance --- 45 Coss Output Capacitance --- 15 Crss Reverse Transfer Capacitance --- 10 Min. Typ. Max. Unit --- --- -1.2 V Tr Td(off) Tf VDS=-10V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol VSD Parameter Diode Forward Voltage2 Conditions VGS=0V , IS=-1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSSN3139 P-Ch 20V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 3 HSSN3139 P-Ch 20V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 4 HSSN3139 P-Ch 20V Fast Switching MOSFETs Ordering Information Part Number HSSN3139 www.hs-semi.cn Package code SOT-323 Ver 2.0 Packaging 3000/Tape&Reel 5