SF28G-T R0G

SF21G-T - SF28G-T Taiwan Semiconductor 2A, 50V - 600V Glass Passivated Super Fast Rectifier FEATURES KEY PARAMETERS ● ● ● ● ● ● Glass passivated chip junction High efficiency, Low VF High current capability High surge current capability Low power loss Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF(AV) 2 A VRRM 50 - 600 V IFSM 50 A TJ MAX 150 °C Package DO-204AC (DO-15) Configuration Single Die APPLICATIONS ● High frequency rectification ● Freewheeling application ● Switching mode converters and inverters in computer and telecommunication. MECHANICAL DATA ● Case: DO-204AC (DO-15) ● Molding compound meets UL 94V-0 flammability rating ● Packing code with suffix "G" means green compound (halogen-free) ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Polarity: As marked ● Weight: 0.4 g (approximately) DO-204AC (DO-15) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Maximum DC blocking voltage Forward current Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode SF21 G-T SF22 G-T SF23 G-T SF24 G-T SF25 G-T SF26 G-T SF27 G-T SF28 G-T SF21G SF22G SF23G SF24G SF25G SF26G SF27G SF28G VRRM 50 100 150 200 300 400 500 600 V VR(RMS) 35 70 105 140 210 280 350 420 V VDC 50 100 150 200 300 400 500 600 V SYMBOL UNIT IF(AV) 2 A IFSM 50 A Junction temperature TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version:B1705 SF21G-T - SF28G-T Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-ambient thermal resistance RӨJA 65 °C/W Junction-to-case thermal resistance RӨJC 16 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT - 0.95 V - 1.30 V - 1.70 V - 5 µA - 100 µA 40 - pF 20 - pF - 35 ns SF21G-T SF22G-T SF23G-T Forward voltage per diode SF24G-T (1) SF25G-T IF = 2A,TJ = 25°C VF SF26G-T SF27G-T SF28G-T Reverse current @ rated VR per diode (2) TJ = 25°C TJ = 125°C IR SF21G-T SF22G-T SF23G-T SF24G-T Junction capacitance SF25G-T 1 MHz, VR=4.0V CJ SF26G-T SF27G-T SF28G-T IF=0.5A , IR=1.0A Reverse recovery time IRR=0.25A trr Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO. PACKING CODE PACKING CODE SUFFIX A0 SF2xG-T (Note 1, 2) R0 G B0 PACKAGE PACKING DO-15 1,500 / Ammo box DO-15 3,500 / 13" Paper reel DO-15 1,000 / Bulk packing Notes: 1. "x" defines voltage from 50V (SF21G-T) to 600V (SF28G-T) 2. Whole series with green compound (halogen-free) EXAMPLE P/N EXAMPLE P/N PART NO. PACKING CODE SF21G-T A0G SF21G-T A0 2 PACKING CODE SUFFIX G DESCRIPTION Green compound Version:B1705 SF21G-T - SF28G-T Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 150 f=1.0MHz Vsig=50mVp-p 125 CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) 3 2 1 0 25 SF21G-T - SF24G-T 75 50 SF25G-T - SF28G-T 25 RESISTIVE OR INDUCTIVE LOAD 0 100 50 75 100 125 0 150 0.1 1 10 AMBIENT TEMPERATURE (oC) 100 TJ=125℃ 10 TJ=75℃ 1 TJ=25℃ 0.1 40 60 80 100 120 140 100 10 SF21G-T - SF24G-T 1 10 TJ=125°C 0.1 SF27G-T - SF28G-T TJ=25°C 1 0.01 Pulse width 0.001 0.3 0.1 0.4 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) UF1DLW SF25G-T - SF26G-T (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.4 Typical Forward Characteristics 1000 20 1000 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 0 100 0.4 0.6 0.5 0.8 0.6 1 0.7 1.2 Pulse Width=300μs 1% Duty Cycle 0.8 0.9 1.4 1 1.6 1.1 1.8 FORWARD VOLTAGE (V) 3 Version:B1705 1.2 SF21G-T - SF28G-T Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) PEAK FORWARD SURGE CURRENT(A) Fig.5 Maximum Non-repetitive Forward Surge Current 60 8.3ms Single Half Sine Wave 50 40 30 20 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram 4 Version:B1705 SF21G-T - SF28G-T Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-204AC (DO-15) DIM. Unit (mm) Unit (inch) Min Max Min Max A 2.60 3.60 0.102 0.142 B 0.70 0.90 0.028 0.035 C 25.40 - 1.000 - D 5.80 7.60 0.228 0.299 E 25.40 - 1.000 - MARKING DIAGRAM P/N G YWW F 5 = Marking Code = Green Compound = Date Code = Factory Code Version:B1705 SF21G-T - SF28G-T Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version:B1705