KY6802

ShenZhen HanKingYuan Electronic Co.,Ltd KY6802 20V Dual N-Channel Mosfet SOT-23-6L FEATURES ● RDS(ON) ≤ 55mΩ( 42mΩ Typ.) @VGS=4.5V ● RDS(ON) ≤ 85mΩ( 60mΩ Typ.) @VGS=2.5V APPLICATIONS ● DC - DC Converter ● Load Switch MARKING 1: G1 3: G2 5: S1 2: S2 4: D2 6: D1 N-CHANNEL MOSFET 6802 6802:Device Code MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID Continuous Drain Current 3 A IDM Pulsed Drain Current 12 A Ptot Total Power Dissipation 0.83 W Thermal Resistance, Junction to Ambient 150 ℃/W Junction Temperature 150 ℃ -55 to +150 ℃ RθJA TJ TSTG Storage Temperature Range www.scr-ky.com 1／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY6802 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified Symbol bol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V,ID = 250μA 20 - - V IDSS Zero Gate Voltage Drain Current VDS = 19V, VGS = 0V - - 1 μA IGSS Gate to Body Leakage Current VGS = ±12V,VDS = 0V - - ±100 nA VDS =VGS,ID = 250μA VGS=4.5V, ID=3A 0.4 - 0.7 1.0 V 42 55 - 60 85 - 240 - pF - 45 - pF - - pF - 22 4.0 - nC - 0.4 - nC - 0.6 - nC - 5 - ns - - ns - 10 24 - ns - 8 - ns - - 1.2 V - - 10 ns - - 3 nC On Characteristics VGS(th) Gate Threshold Voltage RDS(ON) Gate Drain-Source On-State Resistance note1 VGS=2.5V, ID=2A mΩ Dynamic Characteristics note2 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance pa Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS =10V, VGS = 0V, f = 1.0MHz VDS=10V, ID=3A, VGS=4.5V Switching Characteristics note2 td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VGS = 4.5V, VDS=10V, RG =6Ω, ID=1A Drain-Source Diode Characteristics and Maximum Ratings Drain to Source Diode Forward Voltage VGS = 0V, ISD=3A, TJ = 25℃ trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS =3A, di/dt =100A/μs VSD Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 2 . Guaranteed by design, not subject to production testing www.scr-ky.com 2／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY6802 Typical Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Rdson-Drain Current Figure4. Typical Source-Drain Diode Forward Voltage Figure5. Capacitance Characteristics www.scr-ky.com Figure6. Gate Charge 3／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY6802 Typical Performance Characteristics (cont.) Figure7. Normalized Breakdown Voltage vs. Temperature Figure9. Safe Operation Area Figure8. Normalized on Resistance vs. Temperature Figure10. Maximum Drain Current vs. Junction Temperature Figure11. Transient Thermal Response Curve www.scr-ky.com 4／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY6802 SOT-23-6L PACKAGE OUTLINE DRAWING Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e 0.950 TYP. 0.037 TYP. e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 0° 8° θ www.scr-ky.com 0° 8° 5／5