WM02P30M
P-Channel Enhancement MOSFET
Features
Way-on Small Signal MOSFETs
VDS = -20V, ID = -3A
RDS(ON) < 70mΩ @ VGS = -4.5V
RDS(ON) < 90mΩ @ VGS = -2.5V
Trench LV MOSFET Technology
Mechanical Characteristics
SOT-23 Package
Marking : Making Code
RoHS Compliant
Schematic & PIN Configuration
Absolute Maximum Rating (TA=25°C unless otherwise noted)
Rating
Symbol
Value
Units
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±12
V
ID
-3
A
IDM
-10
A
PD
1
W
TJ ,TSTG
-55 to 150
°C
Symbol
Value
Units
RθJA
125
°C/W
Continuous Drain Current
TA = 25°C
Pulsed Drain Current1
Power Dissipation
TA = 25°C
Operating Junction and Storage Temperature Range
Thermal Characteristics
Rating
Thermal Resistance from Junction to Ambient 2
Rev.E,2021
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WM02P30M
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Static Characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
VGS= 0V, ID= -250μA
-20
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS= -20V, VGS= 0V
-
-
-1
μA
Gate-Source Leakage
IGSS
VDS= 0V, VGS= ±12V
-
-
±100
nA
Gate-Source Threshold Voltage
VGS(th)
VDS= VGS, ID= -250μA
-0.4
-
-1
V
Drain-Source on-State Resistance3
RDS(on)
VGS= -4.5V, ID= -3.0A
-
50
70
VGS= -2.5V, ID= -2.0A
-
60
90
-
616
-
-
75
-
mΩ
Dynamic Characteristics4
Input Capacitance
Ciss
VGS = 0V, VDS = -10V,
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
65
-
Total gate charge
Qg
-
3.3
-
Gate-source charge
Qgs
-
0.7
-
Gate-drain charge
Qgd
-
1.3
-
Turn-on Time
td(on)
-
11
-
-
35
-
-
30
-
-
10
-
-
-
-1.2
V
-
-
-3
A
f=1.0MHz
pF
Switching Characteristics4
Rise Time
Turn-off Time
Fall Time
VGS= -2.5V, VDS= -10V,
ID= -3A
tr
VGS= -4.5V, VDD= -10V,
td(off)
RL= 10Ω, RGEN= 1Ω
tf
nC
ns
Source-Drain Diode Characteristics
Body Diode Voltage3
Continuous Source Current
VSD
IS= -1A, VGS= 0V
IS
Notes:
1. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
2. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, The value in any given application depends on the user's
specific board design.
3. Pulse Test: Pulse width≤300μs, duty cycle≤2%.
4. This value is guaranteed by design hence it is not included in the production test.
Rev.E,2021
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WM02P30M
Typical Characteristics
10
VDS= -3V
Drain current -ID (A)
8
6
4
2
0
0
Figure 1. Output Characteristics
Source current -IS (A)
On-Resistance RDS (on) (mΩ)
0.2
0.4
0.6
0.8
2
2.5
1.0
ID= -3A
250
200
150
100
50
0
1.2
Source−drain voltage -VSD (V)
1
Figure 3. Forward Characteristics of Reverse
2
3
5
4
Gate−source voltage -VGS (V)
Figure 4. RDS(ON) vs. VGS
2.0
Normalized RDS (on)
120
On-Resistance RDS (on) (mΩ)
1.5
300
1
80
VGS = -2.5V
VGS = -4.5V
40
0
1
Figure 2. Transfer Characteristics
10
0.1
0.5
Gate−source voltage -VGS (V)
0
1
2
3
Drain current ID (A)
Figure 5. RDS(ON) vs. ID
Rev.E,2021
4
5
1.5
1.0
0.5
-50
-25
0
25
50
75
Temperature Tj(°C)
100
125
150
Figure 6. Normalized RDS(on) vs. Temperature
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WM02P30M
100000
Capacitance(pF)
10000
1000
Ciss
100
Coss
Crss
10
F=1.0MHz
1
0
5
10
15
Drain-source voltage -VDS(V)
20
Figure 7. Capacitance Characteristics
Rev.E,2021
Figure 8. Gate Charge Characteristics
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WM02P30M
Outline Drawing – SOT-23
3
PACKAGE OUTLINE
1
2
SOT-23
D
b
DIMENSIONS
3
1
SYMBOL
0.25
E1 E
θ
2
L
c
e
e1
A
MIN
MAX
A
0.90
1.15
0.035
0.045
A1
0.00
0.10
0.000
0.004
b
0.30
0.50
0.012
0.020
c
0.08
0.15
0.003
0.006
D
2.80
3.00
0.110
0.118
E
2.25
2.55
0.089
0.100
E1
1.20
1.40
0.047
0.055
e
0.95 BSC
1.80
L
θ
b
C
e
e1
0.037BSC
2.00
0.071
0.55REF
0
。
0.079
0.022REF
8
。
0
。
8
。
Notes
DIMENSIONS
M
INCHES
MAX
e1
A1
Z
MILLIMETER
MIN
DIM
INCHES
MILLIMETERS
M
0.080
2.02
C
0.032
0.80
Z
0.111
2.82
e
0.037 BSC
0.95 BSC
e1
0.075 BSC
1.90 BSC
b
0.032
0.80
1. Dimensioning and tolerances per ANSI Y14.5M,
1985.
2. Controlling Dimension: Inches
3. Pin 3 is the cathode (Unidirectional Only).
4. Dimensions are exclusive of mold flash and metal
burrs.
Marking Codes
Part Number
WM02P30M
Marking Code
2301
Package Information
Qty:3k/Reel
CONTACT INFORMATION
No.1001, Shiwan (7) Road, Pudong District, Shanghai, P.R.China.201207
Tel: 86-21-68969993 Fax: 86-21-50757680 Email: market@way-on.com
WAYON website: http://www.way-on.com
For additional information, please contact your local Sales Representative.
® is registered trademark of Wayon Corporation.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
Rev.E,2021
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