2SC4379YU

2SC4379U NPN Silicon Epitaxial Planar Transistor for power amplification applications Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 2 A Base Current IB 0.4 A Ptot 0.5 1 1) W Tj 150 ℃ Tstg - 55 to + 150 ℃ Total Power Dissipation Junction Temperature Storage Temperature Range 1) 2 When mounted on a 250 mm x 0.8 t ceramic substrate. Characteristics at Ta = 25℃ Parameter DC Current Gain at VCE = 2 V, IC = 0.5 A Current Gain Group at VCE = 2 V, IC = 1.5 A Collector Base Cutoff Current at VCB = 50 V Emitter Base Cutoff Current at VEB = 5 V Collector Emitter Breakdown Voltage at IC = 10 mA Collector Emitter Saturation Voltage at IC = 1 A, IB = 50 mA Base Emitter Saturation Voltage at IC = 1 A, IB = 50 mA Transition Frequency at VCE = 2 V, IC = 500 mA Collector Output Capacitance at VCB = 10 V, f = 1 MHz O Y Symbol Min. Typ. Max. Unit hFE hFE hFE 70 120 40 - 140 240 - - ICBO - - 100 nA IEBO - - 100 nA V(BR)CEO 50 - - V VCE(sat) - - 0.5 V VBE(sat) - - 1.2 V fT - 120 - MHz Cob - 30 - pF ® Dated: 24/02/2016 Rev: 06 2SC4379U ® Dated: 24/02/2016 Rev: 06 2SC4379U SOT-89 PACKAGE OUTLINE Dimensions in mm ® Dated: 24/02/2016 Rev: 06