0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BTB12

BTB12

  • 厂商:

    DC(东晨)

  • 封装:

    TO263-3

  • 描述:

  • 数据手册
  • 价格&库存
BTB12 数据手册
江苏东晨电子科技有限公司 JiangSu Dongchen Electronics Technology Co.,Ltd BTB12 双向可控硅 TRIAC 产品概述 BTB12 版本号 201603-A GENERAL DESCRIPTION 双向可控硅采用穿通隔离台面结构,复合玻璃钝化PN结表面保护工艺技术,dv/dt高,可靠性 高,适用于控温、调光、马达控制。 BTB12 Triacs is fabricated using separation diffusion processes ,the junction termination areas are passivated with glass. Thanks to highly dv/dt and reliability,the Triacs series is suitable for domestic lighting ,heating and motor speed controllers. 主要参数 MAIN CHARACTERISTICS 参数 Parameter 数值 Value 单位 Unit IT(RMS) 12 A VDRM/VRRM 600&800 V IGT(III) ≤50 mA 产品特性    A2 FEATURES dv/dt高 通态压降低 Rohs环保产品 Highly dv/dt Low on-state voltage Rohs Products A1 G 应用领域 TO-263 APPLICATIONS 主要应用于调光、控温、马达控制。 domestic lighting ,heating and motor speed controllers. 86-510-87136806 1 /5 http://www.jsdgme.com 江苏东晨电子科技有限公司 JiangSu Dongchen Electronics Technology Co.,Ltd 极限值(除非另有规定,Tj=25℃) ABSOLUTE RATINGS (Tj=25℃,unless otherwise specified) 符号 Symbol IT(RMS) RMS 通态电流 参数 Parameter 数值 Value 12 单位 Unit A F=50HZ ,t=20ms 120 A TP=10ms 78 A2s F=120HZ,Tj=125℃ 50 A/µs TP=20µs,Tj=125℃ 4 A Tj=125℃ 1 W -40-+150 ℃ -40-+125 ℃ TC=90℃ RMS on-state current (full sine wave) ITSM I2t di/dt 通态峰值浪涌电流 Non repetitive surge peak on-state current I2t 耗散值 I2t value for fusing 通态电流上升值 Critical rate of rise of on-state current IGM PG(AV) Tstg 门极峰值电流 Peak gate current 平均门极耗散功率 Average gate power dissipation 贮存结温范围 Storage junction temperature range Tj 工作结温范围 Operating junction temperature range 电参数(除非另有规定,Tj=25℃) ELECTRICAL CHARACTERISTICS (Tj=25℃,unless otherwise specified) 3 quadrants 参数 Parameter 触发电流 Gate trigger current 触发电压 Gate trigger voltage 维持电流 Holding current 擎住电流 Latching current 电压上升率 Rise of off- state voltage 通态压降 Peak on-state voltage 断态漏电流 Peak repetitive forward blocking current 86-510-87136806 符号 Symbol IGT VGT 规范值 Value TW SW CW BW 单位 Unit 5 10 35 50 mA VD=12V,IT=0.1A V VD=12V, IT=0.1A Ⅰ~ Ⅲ Ⅰ~ Ⅲ 1.5 测试条件 Test Conditions IH 20 35 80 100 mA VD=12V,IT=0.1A IL 40 60 100 120 mA VD=12V,IT=0.1A dv/dt 20 40 500 1000 V/μS VD=67%VDRM VTM 1.6 V IT=17A IDRM IRRM 5 μA VRRM=VDRM,Tj = 25°C 2 mA VRRM=VDRM,Tj =125°C 2 /5 http://www.jsdgme.com 江苏东晨电子科技有限公司 JiangSu Dongchen Electronics Technology Co.,Ltd 4 quadrants 参数 Parameter 符号 Symbol 触发电流 Gate trigger current IGT 触发电压 Gate trigger voltage VGT 维持电流 Holding current 擎住电流 Latching current IL 电压上升率 Rise of off- state voltage 通态压降 Peak on-state voltage 断态漏电流 C B Ⅰ~Ⅲ 25 50 IV 50 100 Ⅰ~Ⅲ 单位 Unit 测试条件 Test Conditions mA VD=12V,IT=0.1A V VD=12V, IT=0.1A mA VD=12V,IT=0.1A mA VD=12V,IT=0.1A V/μS VD=67%VDRM 1.5 IV IH 35 60 I-III-IV 45 70 II 80 100 200 400 dv/dt Peak repetitive forward blocking current 规范值 Value VTM 1.6 V IT=17A IDRM IRRM 5 μA VRRM=VDRM,Tj = 25°C 2 mA VRRM=VDRM,Tj =125°C 热特性 THERMAL RESISTANCES 符号 Symbol 参数 Parameter 数值 Value 单位 Unit Rth(j-c) Junction to case(AC) 1.2 K/W Rth(j-a) Junction to ambient 45 K/W 86-510-87136806 3 /5 http://www.jsdgme.com 江苏东晨电子科技有限公司 JiangSu Dongchen Electronics Technology Co.,Ltd 特征曲线 ELECTRICAL CHARACTERISTICS (CURVES) 图1 最大耗散功率与RMS通态电流关系 Fig.1.Maximum Power Dissipation Versus on-state current 图3 通态特性 Fig.3.On-State Characteristics 图2 RMS通态电流与Tc温度关系 Fig.2. RMS On-state Current Versus TL 图4 通态浪涌峰值电流与周期数关系 Fig.4.Surge Peak On-state Current Versus Number Cycles 图5 IGT、IH、IL相对值(相对于25℃)与结温关系 Fig.5.Relative Variation Of Gate Trigger Current , Holding Current And Latching Current Versus Junction Temperature (Typical Value) 86-510-87136806 4 /5 http://www.jsdgme.com 江苏东晨电子科技有限公司 JiangSu Dongchen Electronics Technology Co.,Ltd 封装尺寸 PACKAGE MECHANICAL DATA TO-263 Information furnished is believed to be accurate and reliable. However, Jiangsu Dongchen Electronics Technology CO.,LTD assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Jiangsu Dongchen Electronics Technology CO.,LTD. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. Jiangsu Dongchen Electronics Technology CO.,LTD products are not authorized for use as critical components in life support devices or systems without express written approval of Jiangsu Dongchen Electronics Technology CO.,LTD. 86-510-87136806 5 /5 http://www.jsdgme.com
BTB12 价格&库存

很抱歉,暂时无法提供与“BTB12”相匹配的价格&库存,您可以联系我们找货

免费人工找货