SL10N10A

SL10N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS RDS(ON)@10V,MAX 100 V 95 mΩ ID 10 A D D1 G S1 D D2 S SOT-223 FEATURES • Trench Power MV MOSFET technology • Excellent package for heat dissipation • High density cell design for low R DS(ON) Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage ±20 V V(br)DSS Drain-Source Breakdown Voltage 100 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -50 to 155 °C IS Diode Continuous Forward Current Tc=25°C 15 A Mounted on Large Heat Sink IDM Pulse Drain Current Tested Tc=25°C 35 A ID Continuous Drain Current@GS=10V Tc=25°C 10 A PD Maximum Power Dissipation Tc=25°C 3.1 W RθJA Thermal Resistance Junction-Ambient((*1 in2 Pad of 2-oz Copper), Max.) 0 40 °C/W www.slkormicro.com 1 SL10N10A Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Parameter Condition Min Typ Max Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) BV(BR)DSS Drain-Source Breakdown Voltage VGS=0V ID=250μA IDSS Zero Gate Voltage Drain Current IGSS Unit 100 -- -- V VDS=100V，VGS=0V -- -- 1 uA Gate-Body Leakage Current VGS=±20V，VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS，ID=250μA 1 1.9 3 V VGS=10V， ID=10A -- 80 95 RDS(on) Drain-Source On-State Resistance VGS=4.5V，ID=8A -- 93 120 mΩ Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VDS=50V，VGS=0V， f=1MHz -- 1070 -- pF -- 33 -- pF -- 30 -- pF -- 26 -- nC -- 5.4 -- nC Switching Characteristics Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge -- 5.8 -- nC td(on) Turn-on Delay Time -- 7 -- nS tr Turn-on Rise Time -- 24 -- nS td(off) Turn-Off Delay Time -- 25 -- nS tf Turn-Off Fall Time -- 31 -- nS -- 0.9 1.2 V VDS=50V，ID=10A， VGS=10V VDD=50V，ID=10A， VGS=10V，RG=3Ω Source- Drain Diode Characteristics VSD Forward on voltage www.slkormicro.com Tj=25℃，Is=15A， 2 SL10N10A DTypical Operating Characteristics 5 18 10V ID, Drain-Source Current (A) ID, Drain-Source Current (A) 16 4 3 4.0V 2 1.5V 1 14 12 10 8 6 0 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 VGS, Gate -Source Voltage (V) Fig2. Typical Transfer Characteristic VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics 2.6 200 On Resistance(mΩ ) 2.3 2 VGS=10V 1.7 1.4 VGS=4.5V 180 160 140 VGS=10V 120 100 1.1 80 0.8 0 25 50 75 100 125 60 150 0 Tj - Junction Temperature (°C) Fig3. Normalized On-Resistance Vs. Temperature 1800 8 1600 7 1400 Capacitance (pF) 2000 9 6 5 4 VDS=50V 3 0 0 12 15 18 21 24 27 Crss 0 Qg -Total Gate Charge (nC) Fig5. Typical Gate Charge Vs.Gate-Source Voltage www.slkormicro.com 25 600 200 9 20 800 400 6 15 1000 1 3 10 1200 2 0 5 ID, Drain-Source Current (A) Fig4. On-Resistance Vs. Drain-Source Current 10 VGS, Gate-Source Voltage (V) 25°C 2 3.0V Normalized On Resistance 125°C 4 10 Coss 20 30 40 50 60 70 80 VDS , Drain-Source Voltage (V) Fig6 Typical Capacitance Vs.Drain-Source 3 90 100 SL10N10A 100 Limit by RDS(ON) ID - Drain Current (A) 10 100us 1 1ms 10ms 0.1 100ms DC 0.01 0.1 1 10 100 VDS, Drain -Source Voltage (V) Fig7. Maximum Safe Operating Area www.slkormicro.com 4 SL10N10A SOT-223 Package information www.slkormicro.com 5