BCD7N65

BCT7N65/BCD7N65 N-channel 650V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V ID 7A advanced planar VDMOS technology. The resulting device has low conduction resistance, RDS(on),max superior switching performance and high avalance energy. Qg,typ 1.4Ω 20.7nC Features  Low RDS(on)    Low gate charge (typ. Qg =20.7nC) 100% UIS tested  RoHS compliant TO-252 TO-220F D G Applications S  Power faction correction.  Switched mode power supplies.  LED driver. Pb N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Value Unit 650 V 7 A 4.3 A IDM 28 A VGSS ±30 V EAS 352 mJ VDSS ( TC = 25°C ) Continuous drain current ID ( TC = 100°C ) 1) Pulsed drain current Gate-Source voltage Avalanche energy, single pulse Peak diode recovery dv/dt 2) 3) dv/dt 5 V/ns 39 W 0.31 W/°C TO- 252 ( TC = 25°C ) 100 W Derate above 25°C 0.8 W/°C -55 to +150 °C Power Dissipation TO-220F ( TC = 25°C ) Derate above 25°C Power Dissipation PD Operating juncition and storage temperature range TJ, TSTG Continuous diode forward current IS 7 A Diode pulse current IS,pulse 28 A Thermal Characteristics Parameter Symbol Value TO-220F TO-252 Unit Thermal resistance, Junction-to-case RθJC 3.2 1.25 °C/W Thermal resistance, Junction-to-ambient RθJA 62.5 110 °C/W ShanDong Baocheng Electronics Co., Ltd 1 BCT7N65/BCD7N65 Package Marking and Ordering Information Device Package Marking Units/Tube Tube BCT7N65 TO TO-220F BCT7N65 50 BCD7N65 TO TO-252 BCD7N65 Device Electrical Characteristics Parameter Units/Real 2500 Tc = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=250 uA 650 - - V Gate threshold voltage VGS(th) VDS=VGS, ID=250 uA 2 - 4 V Drain cut-off current IDSS VDS=650 V, VGS=0 V, Tj = 25°C - - 1 μA Tj = 125°C - 100 Gate leakage current, Forward IGSSF VGS=30 V, VDS=0 V - - 100 nA Gate leakage current, Reverse IGSSR VGS=-30 V, VDS=0 V - - -100 nA Drain-source on-state resistance RDS(on) VGS=10 V, ID=3.5 A - 1.2 1.4 Ω Input capacitance Ciss VDS = 25 V, VGS = 0 V, - 1090 - Output capacitance Coss f = 1 MHz - 111 - Reverse transfer capacitance Crss - 6.1 - Turn-on delay time td(on) VDD = 325 V, ID = 7 A - 12.2 - Rise time tr RG = 10 Ω, VGS=15 V - 33.4 - Turn-off delay time td(off) - 53.6 - Fall time tf - 15 Dynamic characteristics pF ns - Gate charge characteristics Gate to source charge Qgs VDD=520 V, ID=7 A, - 5.7 - Gate to drain charge Qgd VGS=0 to 10 V - 7.2 - Gate charge total Qg - 20.7 - Gate plateau voltage Vplateau - 5 - V nC Reverse diode characteristics Diode forward voltage VSD VGS=0 V, IF=7 A - 0.85 1.5 V Reverse recovery time trr VR=325 V, IF=7 A, - 373.2 - ns Reverse recovery charge Qrr dIF/dt=100 A/μs - 2.1 - μC Peak reverse recovery current Irrm - 15.7 - A Notes: 1. Pulse width limited by maximum junction temperature. 2. L=10mH, IAS = 8.4A, Starting Tj= 25°C. 3. ISD = 7A, di/dt≤100A/us, VDD≤BVDS, Starting Tj= 25°C. ShanDong Baocheng Electronics Co., Ltd 2 BCT7N65/BCD7N65 Electrical Characteristics Diagrams Figure 1. Typical Output Characteristics Figure 2. Transfer Characteristics VGS=10V Tc = 25°C VGS=7V ent ,Draincurr (A) VGS=6V VGS=5.5V I D Tc = 150°C VDS ,Drain−source voltage (V) VGS ,Gate−source voltage (V) Figure 4. Threshold Voltage vs. Temperature , (Normalized) V Gate voltage , Drain-Source (Ω) Figure 3. On-Resistance Variation vs. Drain Current DS (on) VGS = 10 V Tc = 25°C Pulse test IDS=0.25 mA Pulse test ID ,Drain current (A) Tj ,Junction temperature (°C) Figure 6. On-Resistance vs. Temperature (Normalized) On-Resistance R DS(on) , BV S S Drain-Source , (Normalized) Breakdown Voltage Figure 5. Breakdown Voltage vs. Temperature VGS=0 V VGS=10 V IDS=0.25 mA Pulse test IDS=2 A Pulse test Tj ,Junction temperature (°C) Tj ,Junction temperature (°C) 3 ShanDong Baocheng Electronics Co., Ltd BCT7N65/BCD7N65 Figure 8. Gate Charge Characterist C e citanc Capa (pF) Voltage (V) Figure 7. Capacitance Characteristics Notes:f = 1 MHz,VGS=0 V C = C + C (C iss gs gd ds = shorted) C =C +C oss ds ,Gate-Source iss C oss gd VDS=480V, C =C ID = 7 A gd G S rss V C rss VDS ,Drain-Source Voltage (V) QG ,Total Gate Charge (nC) Figure 9. Maximum Safe Operating Figure 10. Maximum Safe Operating Area Area TO-220F TO-220/ TO-251/TO-252/TO-262 100us 100us 1ms 1ms (A) ent curr Limited by R Limited by R DC DS(on) DC DS(on) T = 25°C n ,Drai 10ms 10ms Notes: T = 25°C Notes: j ID c c T = 150°C T = 150°C Single Pulse Single Pulse j VDS ,Drain-Source Voltage (V) VDS ,Drain-Source Voltage (V) Figure 11. Power Dissipation vs. Figure 12. Power Dissipation vs. Temperature Temperature TO-220F D P ,power dissipation, (W) D P ,power dissipation, (W) TO-252 Tc ,Case temperature (°C) Tc ,Case temperature (°C) ShanDong Baocheng Electronics Co., Ltd 4 BCT7N65/BCD7N65 Figure 14. Body Diode Transfer Characteristics I,Drain current (A) Figure 13. Continuous Drain Current vs. Temperature Tc = 150° Tc = 25°C VSD ,Source-Drain Voltage (V) Tc ,Case temperature (°C) e Figure 15 Transient Thermal Impendance,Junction to Case, TO-220F P DM In descending order D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse Duty = t/T Z (t)=3.2°C/W Max. θJC t ,Pulse Width (s) 5 ShanDong Baocheng Electronics Co., Ltd t T BCT7N65/BCD7N65 Gate Charge Test Circuit & Waveform Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 ShanDong Baocheng Electronics Co., Ltd BCT7N65/BCD7N65 Mechanical Dimensions for TO-220F UNIT：mm TO-220F Part Marking Information ShanDong Baocheng Electronics Co., Ltd 7 SYMBOL MIN NOM MAX A 4.5 4.9 A1 2.3 2.9 b 0.65 0.9 b1 1.1 1.7 b2 1.2 1.4 c 0.35 0.65 D 14.5 16.5 D1 6.1 6.9 E 9.6 10.3 E1 6.5 7 7.5 e 2.44 2.54 2.64 L 12.5 14.3 L1 9.45 10.05 L2 15 16 L3 3.2 4.4 ΦP 3 3.3 Q 2.5 2.9 BCT7N65/BCD7N65 Mechanical Dimensions for TO-252 UNIT：mm TO-252 Part Marking Information ShanDong Baocheng Electronics Co., Ltd 8 SYMBOL MIN NOM A 2.10 2.50 B 0.80 1.25 b 0.50 0.85 b1 0.50 0.90 b2 0.45 0.60 C 0.45 0.60 D 6.35 6.75 D1 5.10 5.50 E 5.80 6.30 e1 2.25 e2 4.45 4.75 L1 9.50 10.20 L2 0.90 1.45 L3 0.60 1.10 K -0.1 0.10 2.30 MAX 2.35