SFS08R08DF

SFS08R08DF Enhancement Mode N-Channel Power MOSFET General Description ® FSMOS MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage. Features  Low RDS(ON) & FOM  Extremely low switching loss  Excellent reliability and uniformity  Fast switching and soft recovery Applications  PD charger  Motor driver  Switching voltage regulator  DC-DC convertor  Switched mode power supply Key Performance Parameters Parameter Value Unit VDS, min @ Tj(max) 80 V ID, pulse 192 A 8 mΩ 28.9 nC RDS(ON) max @ VGS=10V Qg Marking Information Product Name Package Marking SFS08R08DF TO252 SFS08R08D Package & Pin information Oriental Semiconductor © Copyright Reserved V2.0 Page.1 SFS08R08DF Enhancement Mode N-Channel Power MOSFET Absolute Maximum Ratings at Tj=25°C unless otherwise noted Parameter Symbol Value Unit Drain source voltage VDS 80 V Gate source voltage VGS ±20 V ID 64 A ID, pulse 192 A IS 64 A IS, Pulse 192 A PD 87 W EAS 25 mJ Tstg，Tj -55 to 175 °C 1) Continuous drain current , TC=25 °C 2) Pulsed drain current , TC=25 °C 1) Continuous diode forward current , TC=25 °C 2) Diode pulsed current , TC=25 °C 3) Power dissipation , TC=25 °C 5) Single pulsed avalanche energy Operation and storage temperature Thermal Characteristics Parameter Thermal resistance, junction-case Thermal resistance, junction-ambient 4) Symbol Value Unit RθJC 1.72 °C/W RθJA 62 °C/W Electrical Characteristics at Tj=25°C unless otherwise specified Parameter Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance Drain-source on-state resistance Symbol Min. BVDSS 80 VGS(th) 1.0 Typ. Max. Unit Test condition V VGS=0 V, ID=250 μA 2.5 V VDS=VGS, ID=250 μA RDS(ON) 6.2 8 mΩ VGS=10 V, ID=12 A RDS(ON) 7.8 10 mΩ VGS=4.5 V, ID=9 A 100 Gate-source leakage current IGSS Drain-source leakage current IDSS Gate resistance RG VGS=20 V nA -100 Oriental Semiconductor © Copyright Reserved V2.0 1 3.3 VGS=-20 V μA VDS=80 V, VGS=0 V Ω ƒ=1 MHz, Open drain Page.2 SFS08R08DF Enhancement Mode N-Channel Power MOSFET Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Input capacitance Ciss 2028 pF Output capacitance Coss 717 pF Reverse transfer capacitance Crss 53.9 pF Turn-on delay time td(on) 22.2 ns tr 6.3 ns td(off) 47.5 ns tf 8.8 ns Rise time Turn-off delay time Fall time Test condition VGS=0 V, VDS=25 V, ƒ=100 kHz VGS=10 V, VDS=50 V, RG=2.5 Ω, ID=25 A Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Total gate charge Qg 28.9 nC Gate-source charge Qgs 5.4 nC Gate-drain charge Qgd 4.9 nC Vplateau 3.5 V Gate plateau voltage Test condition VGS=10 V, VDS=50 V, ID=25 A Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit 1.3 V Diode forward voltage VSD Reverse recovery time trr 51.3 ns Reverse recovery charge Qrr 60.6 nC Peak reverse recovery current Irrm 2 A Test condition IS=12 A, VGS=0 V VR=50 V, IS=25 A, di/dt=100 A/μs Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C. 5) VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C. Oriental Semiconductor © Copyright Reserved V2.0 Page.3 SFS08R08DF Enhancement Mode N-Channel Power MOSFET Electrical Characteristics Diagrams 250 10 V 7V 5.5 V Tj = 25 ℃ 100 ID, Drain current(A) ID, Drain current (A) 200 5V 150 4.5 V 100 4V 10 VGS= 3.5 V 50 0 3.5 4 4.5 VDS= 10 V 5 5.5 Tj = 25 ℃ 7 10 1000 0 2 4 6 8 1 10 0.1 0 2 VDS, Drain-source voltage (V) Figure 1. Typ. output characteristics VGS = 0 V VGS, Gate-source voltage(V) 3 C, Capacitance (pF) Coss 2 10 Crss 1 10 0 10 30 40 50 60 70 VDS = 50 V 8 6 4 2 0 80 0 5 10 15 20 25 30 150 200 Qg, Gate charge(nC) VDS, Drain-source voltage (V) Figure 3. Typ. capacitances Figure 4. Typ. gate charge 15.0m 100 ID = 250 μA ID = 12 A VGS = 0 V 12.0m 95 RDS(ON), On-resistance(Ω) BVDSS, Drain-source breakdown voltage (V) 10 ID = 25 A Ciss 10 20 8 10 f = 100 kHz 10 6 Figure 2. Typ. transfer characteristics 4 10 4 VGS, Gate-source voltage(V) 90 85 VGS = 10 V 9.0m 6.0m 3.0m 80 -50 0 50 100 150 Tj, Junction temperature (℃) Figure 5. Drain-source breakdown voltage Oriental Semiconductor © Copyright Reserved V2.0 200 -50 0 50 100 Tj, Junction temperature (℃) Figure 6. Drain-source on-state resistance Page.4 SFS08R08DF Enhancement Mode N-Channel Power MOSFET 2.50 100 ID = 250 μA Tj = 25 ℃ 2.00 IS, Source current (A) Vth, Threshold voltage (V) 2.25 1.75 1.50 1.25 10 1.00 1 0.75 -50 0 50 100 150 200 0.5 1.0 1.5 2.0 VSD, Source-drain voltage (V) Tj, Junction temperature (℃) Figure 7. Threshold voltage Figure 8. Forward characteristic of body diode 50m 70 45m 60 35m 4.5 V VGS=4 V 5V 6V 7.5 V ID, Drain current (A) RDS(ON), On-resistance(Ω) 40m 10 V 30m 25m 20m 50 40 30 20 15m 10 10m 5m 50 100 150 200 250 300 0 350 0 25 50 75 100 125 150 175 TC, Case temperature (℃) ID, Drain current(A) Figure 9. Drain-source on-state resistance Figure 10. Drain current ID, Drain current(A) 10 zthjc Thermal Response(K/W) 10 μs 100 100 μs RDS(ON) Limited 1 ms 10 ms DC 1 0.1 0.1 1 10 100 VDS, Drain-source voltage(V) Figure 11. Safe operation area TC=25 °C Oriental Semiconductor © Copyright Reserved V2.0 zthjc Thermal Response(K/W) 101 D= tp/T D= 1 100 0.5 0.2 0.1 10 -1 0.05 0.02 0.01 10-2 10-5 Single Pulse 10-4 10-3 10-2 10-1 100 tp Pulse width(s) Figure 12. Max transient thermal impedance Page.5 SFS08R08DF Enhancement Mode N-Channel Power MOSFET Test circuits and waveforms Figure 1. Gate charge test circuit & waveform Figure 2. Switching time test circuit & waveforms Figure 3. Unclamped inductive switching (UIS) test circuit & waveforms Figure 4. Diode reverse recovery test circuit & waveforms Oriental Semiconductor © Copyright Reserved V2.0 Page.6 SFS08R08DF Enhancement Mode N-Channel Power MOSFET Package Information E c2 D1 L6 L3 θ1 b3 H θ1 L1 θ1 b2 L4 L5 D Φ K AR M E- 0.1 p To .30± 1 E1 A2 e b θ2 C L A1 A θ L2 C (L1) Symbol A A1 A2 b b1 b2 b3 c c1 c2 D D1 E E1 e H L L1 L2 L3 L4 L5 L6 θ θ1 θ2 Min 2.20 0.00 0.90 0.72 0.71 0.72 5.13 0.47 0.46 0.47 6.00 5.25 6.50 4.70 2.186 9.80 1.40 0.90 0.60 0.15 0˚ 5˚ 5˚ Version 1: mm Nom 2.30 1.01 0.76 5.33 0.51 6.10 6.60 2.286 10.10 1.50 2.90 REF 0.508 BSC 0.80 1.80 REF 7˚ 7˚ Max 2.38 0.10 1.10 0.85 0.81 0.90 5.46 0.60 0.56 0.60 6.20 6.70 2.386 10.40 1.70 1.25 1.00 0.75 8˚ 9˚ 9˚ TO252-J package outline dimension Oriental Semiconductor © Copyright Reserved V2.0 Page.7 SFS08R08DF Enhancement Mode N-Channel Power MOSFET Ordering Information Package Type Units/ Reel Reels / Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box TO252-J 2500 2 5000 5 25000 Product Information Product Package Pb Free RoHS Halogen Free SFS08R08DF TO252 yes yes yes Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. For further information on technology, delivery terms and conditions and prices, please contact the Oriental Semiconductor sales representatives (www.orientalsemi.com). © Oriental Semiconductor Co.,Ltd. All Rights Reserved Oriental Semiconductor © Copyright Reserved V2.0 Page.8